Diodes Incorporated FMMT549TA
- Part Number:
- FMMT549TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464728-FMMT549TA
- Description:
- TRANS PNP 30V 1A SOT23-3
- Datasheet:
- FMMT549TA
Diodes Incorporated FMMT549TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT549TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC-30V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT549
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic750mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-250mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)35V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT549TA Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
FMMT549TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549TA Applications
There are a lot of Diodes Incorporated
FMMT549TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
FMMT549TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549TA Applications
There are a lot of Diodes Incorporated
FMMT549TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT549TA More Descriptions
FMMT549 Series PNP 1 A 30 V SMT Silicon Medium Power Transistor - SOT-23-3
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 30V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT549TA
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
Trans, Pnp, 30V, 1A, 150Deg C, 0.5W Rohs Compliant: Yes |Diodes Inc. FMMT549TA
The three parts on the right have similar specifications to FMMT549TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusPolarityFrequency - TransitionReference StandardSubcategoryMax Junction Temperature (Tj)View Compare
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FMMT549TA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-30V500mWDUALGULL WING260-1A100MHz40FMMT54931Single500mWSWITCHING100MHzPNPPNP30V1A100 @ 500mA 2V100nA ICBO750mV @ 200mA, 2A30V100MHz-250mV30V35V5V-1A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN100V625mWDUALGULL WING260900mA-40FMMT63431Single----NPN - Darlington960mV900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A100V---120V12V900mA1mm3.05mm1.4mm--RoHS CompliantLead Free8541.21.00.95unknownR-PDSO-G3Not QualifiedNPN140MHz---
-
-Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN30V330mWDUALGULL WING260300mA-40FMMTA1331Single330mWSWITCHING--NPN - Darlington900mV300mA10000 @ 100mA 5V100nA900mV @ 100μA, 100mA40V100MHz--40V10V300mA---No SVHC-RoHS CompliantLead Free8541.21.00.95unknown-Not QualifiedNPN-CECC--
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed100V625mWDUALGULL WING260900mA-40FMMT63431Single625mW---NPN - Darlington100V900mA20000 @ 100mA 5V100nA960mV @ 5mA, 1A115V-850mV100V120V12V900mA1.1mm3.05mm1.4mmNo SVHCNoROHS3 CompliantLead Free----NPN140MHz-Other Transistors150°C
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