Diodes Incorporated FMMT549ATA
- Part Number:
- FMMT549ATA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3068976-FMMT549ATA
- Description:
- TRANS PNP 30V 1A SOT23-3
- Datasheet:
- FMMT549ATA
Diodes Incorporated FMMT549ATA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FMMT549ATA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Voltage - Rated DC-30V
- Max Power Dissipation500mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-1A
- Frequency100MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFMMT549A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation500mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product100MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage-500mV
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)35V
- Emitter Base Voltage (VEBO)-5V
- Continuous Collector Current-1A
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FMMT549ATA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FMMT549ATA Features
the DC current gain for this device is 150 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 300mV @ 1mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549ATA Applications
There are a lot of Diodes Incorporated
FMMT549ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FMMT549ATA Features
the DC current gain for this device is 150 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 300mV @ 1mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549ATA Applications
There are a lot of Diodes Incorporated
FMMT549ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FMMT549ATA More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
FMMT549A Series 30 V 1 A PNP Silicon Planar Medium Power Transistor - SOT-23-3
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
FMMT549A Series 30 V 1 A PNP Silicon Planar Medium Power Transistor - SOT-23-3
Trans GP BJT PNP 30V 1A 500mW 3-Pin SOT-23 T/R
The three parts on the right have similar specifications to FMMT549ATA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSubcategoryCurrent - Collector (Ic) (Max)HTS CodeReach Compliance CodeReference StandardJESD-30 CodeQualification StatusConfigurationPower - MaxFrequency - TransitionVCEsat-MaxTurn Off Time-Max (toff)Turn On Time-Max (ton)Collector-Base Capacitance-MaxView Compare
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FMMT549ATA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJCut Tape (CT)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-30V500mWDUALGULL WING260-1A100MHz40FMMT549A31Single500mWSWITCHING100MHzPNPPNP30V1A150 @ 500mA 2V100nA ICBO300mV @ 1mA, 100mA30V100MHz-500mV30V35V-5V-1A1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mg--55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)--Matte Tin (Sn) - annealed-12V625mW----2.5A--FMMT7173-Single--110MHzPNPPNP220mV2.5A300 @ 100mA 2V100nA220mV @ 50mA, 2.5A12V80MHz-180mV--12V5V-2.5A1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead FreeOther Transistors2.5A------------
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-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR99MATTE TIN80V330mWDUALGULL WING260500mA-40FMMTA0631Single--100MHzNPNNPN250mV500mA50 @ 10mA 1V100nA250mV @ 10mA, 100mA80V100MHz250mV-80V4V500mA1mm3.05mm1.4mmNo SVHC-RoHS CompliantLead Free--8541.21.00.95unknownCECC50002-240R-PDSO-G3Not Qualified-------
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13 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2014e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)-625mWDUALGULL WING------1--SWITCHING-PNPPNP330mV1A250 @ 500mA 10V100nA330mV @ 150mA, 1A100V200MHz----------ROHS3 Compliant-----AEC-Q101R-PDSO-G3-SINGLE625mW200MHz0.33 V760ns50ns20pF
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