Fairchild/ON Semiconductor FDS4465
- Part Number:
- FDS4465
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478365-FDS4465
- Description:
- MOSFET P-CH 20V 13.5A 8-SOIC
- Datasheet:
- FDS4465
Fairchild/ON Semiconductor FDS4465 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4465.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight130mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2003
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance8.5MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-13.5A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time20 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.5m Ω @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8237pF @ 10V
- Current - Continuous Drain (Id) @ 25°C13.5A Ta
- Gate Charge (Qg) (Max) @ Vgs120nC @ 4.5V
- Rise Time24ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)140 ns
- Turn-Off Delay Time300 ns
- Continuous Drain Current (ID)13.5A
- Threshold Voltage-600mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Pulsed Drain Current-Max (IDM)50A
- Dual Supply Voltage-20V
- Max Junction Temperature (Tj)175°C
- Nominal Vgs-600 mV
- Height1.75mm
- Length5mm
- Width4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDS4465 Description
FDS4465 is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge, fast switching speed, as well as high current and power handling capability. Power MOSFET FDS4465 is primarily designed for power management applications with a wide range of gate drive voltage (1.8 V – 8 V).
FDS4465 Features
Low RDS (on)
Low gate charge
Fast switching speed
Available in the SOIC8 package
High power and current handling capability
FDS4465 Applications
Power management applications
NVTFS4823NTAG Description
FDS4465 is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge, fast switching speed, as well as high current and power handling capability. Power MOSFET FDS4465 is primarily designed for power management applications with a wide range of gate drive voltage (1.8 V – 8 V).
FDS4465 Features
Low RDS (on)
Low gate charge
Fast switching speed
Available in the SOIC8 package
High power and current handling capability
FDS4465 Applications
Power management applications
NVTFS4823NTAG Description
FDS4465 More Descriptions
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -13.5A, 8.5mΩ
Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
In a Pack of 5, FDS4465 P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC ON Semiconductor
TRANS MOSFET P-CH 20V 13.5A 8SOIC - Tape and Reel
MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.5A; Source Voltage Vds:-20V; On Resistance
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -13.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 13.5A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -600mV; Voltage Vgs Rds on Measurement: -4.5V
Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
In a Pack of 5, FDS4465 P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC ON Semiconductor
TRANS MOSFET P-CH 20V 13.5A 8SOIC - Tape and Reel
MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.5A; Source Voltage Vds:-20V; On Resistance
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -13.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 13.5A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -600mV; Voltage Vgs Rds on Measurement: -4.5V
The three parts on the right have similar specifications to FDS4465.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
-
FDS4465ACTIVE (Last Updated: 1 day ago)18 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8130mgSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2003e4yesActive1 (Unlimited)8SMD/SMTEAR998.5MOhmNickel/Palladium/Gold (Ni/Pd/Au)Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-13.5A112.5W TaSingleENHANCEMENT MODE2.5W20 nsP-ChannelSWITCHING8.5m Ω @ 13.5A, 4.5V1.5V @ 250μA8237pF @ 10V13.5A Ta120nC @ 4.5V24ns20V1.8V 4.5V±8V140 ns300 ns13.5A-600mV8V-20V50A-20V175°C-600 mV1.75mm5mm4mmNo SVHCNoROHS3 CompliantLead Free------------
-
----Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)PowerTrench®2003--Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)-----2.5W Ta----N-Channel-10.5m Ω @ 10.8A, 10V5V @ 250μA1686pF @ 20V10.8A Ta40nC @ 10V-40V10V±20V----------------------------
-
----Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)8---MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-1-2.5W Ta-ENHANCEMENT MODE--P-ChannelSWITCHING17m Ω @ 9A, 10V2V @ 250μA2.01pF @ 15V9A Ta30nC @ 5V-30V4.5V 10V±20V---------------ROHS3 Compliant-YESLOGIC LEVEL COMPATIBLE260308R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE9A0.017Ohm30V
-
----Surface Mount8-SOIC (0.154, 3.90mm Width)--SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)8---MATTE TIN--MOSFET (Metal Oxide)DUALGULL WING-1-2.5W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING7.5m Ω @ 13.2A, 10V5V @ 250μA2.819pF @ 20V13.2A Ta67nC @ 10V-40V10V±20V---------------ROHS3 Compliant-YES-260NOT SPECIFIED8R-PDSO-G8COMMERCIALSINGLE WITH BUILT-IN DIODE13.2A0.0075Ohm40V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
03 April 2024
ADUM1201BRZ-RL7 Alternatives, Specifications, Application and More
Ⅰ. Overview of ADUM1201BRZ-RL7Ⅱ. Specifications of ADUM1201BRZ-RL7Ⅲ. Propagation delay-related parametersⅣ. Application of ADUM1201BRZ-RL7Ⅴ. How to evaluate the performance of ADUM1201BRZ-RL7?Ⅵ. Functional block diagram of ADUM1201BRZ-RL7Ⅶ. PCB layout of... -
03 April 2024
SG3525 PWM IC Characteristics, Internal Structure, Working Principle and SG3525 vs SG3524
Ⅰ. Description of SG3525Ⅱ. Characteristics of SG3525Ⅲ. Internal structure and working principle of SG3525Ⅳ. Representative block diagram of SG3525Ⅴ. Application circuit of SG3525Ⅵ. How to adjust the frequency... -
07 April 2024
ATMEGA16A-AU Microcontroller: Characteristics, Structure, Technical Parameters and Package
Ⅰ. ATMEGA16A-AU overviewⅡ. Characteristics of ATMEGA16A-AUⅢ. Structure and functions of ATMEGA16A-AUⅣ. Technical parameters of ATMEGA16A-AUⅤ. Power consumption management of ATMEGA16A-AUⅥ. Application of ATMEGA16A-AUⅦ. ATMEGA16A-AU packageⅧ. How to build... -
07 April 2024
BTS5030-1EJA Alternatives, Specification, Pinout, Features and Application
Ⅰ. BTS5030-1EJA overviewⅡ. BTS5030-1EJA specificationⅢ. Protection function of BTS5030-1EJAⅣ. Features of BTS5030-1EJAⅤ. How does BTS5030-1EJA realize real-time monitoring of the working status of the circuit?Ⅵ. BTS5030-1EJA pinout and...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.