FDS4465

Fairchild/ON Semiconductor FDS4465

Part Number:
FDS4465
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478365-FDS4465
Description:
MOSFET P-CH 20V 13.5A 8-SOIC
ECAD Model:
Datasheet:
FDS4465

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Specifications
Fairchild/ON Semiconductor FDS4465 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4465.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    130mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2003
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    8.5MOhm
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -13.5A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    20 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 13.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8237pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    13.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 4.5V
  • Rise Time
    24ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    140 ns
  • Turn-Off Delay Time
    300 ns
  • Continuous Drain Current (ID)
    13.5A
  • Threshold Voltage
    -600mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Pulsed Drain Current-Max (IDM)
    50A
  • Dual Supply Voltage
    -20V
  • Max Junction Temperature (Tj)
    175°C
  • Nominal Vgs
    -600 mV
  • Height
    1.75mm
  • Length
    5mm
  • Width
    4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDS4465 Description
FDS4465 is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge, fast switching speed, as well as high current and power handling capability. Power MOSFET FDS4465 is primarily designed for power management applications with a wide range of gate drive voltage (1.8 V – 8 V).

FDS4465 Features
Low RDS (on)
Low gate charge
Fast switching speed
Available in the SOIC8 package
High power and current handling capability

FDS4465 Applications
Power management applications
NVTFS4823NTAG Description
FDS4465 More Descriptions
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -13.5A, 8.5mΩ
Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
In a Pack of 5, FDS4465 P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC ON Semiconductor
TRANS MOSFET P-CH 20V 13.5A 8SOIC - Tape and Reel
MOSFET, P, SMD, 8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.5A; Source Voltage Vds:-20V; On Resistance
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).
MOSFET, P, SMD, 8-SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -13.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 13.5A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -600mV; Voltage Vgs Rds on Measurement: -4.5V
Product Comparison
The three parts on the right have similar specifications to FDS4465.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • FDS4465
    FDS4465
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    130mg
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2003
    e4
    yes
    Active
    1 (Unlimited)
    8
    SMD/SMT
    EAR99
    8.5MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -13.5A
    1
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    20 ns
    P-Channel
    SWITCHING
    8.5m Ω @ 13.5A, 4.5V
    1.5V @ 250μA
    8237pF @ 10V
    13.5A Ta
    120nC @ 4.5V
    24ns
    20V
    1.8V 4.5V
    ±8V
    140 ns
    300 ns
    13.5A
    -600mV
    8V
    -20V
    50A
    -20V
    175°C
    -600 mV
    1.75mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS4780
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2003
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    2.5W Ta
    -
    -
    -
    -
    N-Channel
    -
    10.5m Ω @ 10.8A, 10V
    5V @ 250μA
    1686pF @ 20V
    10.8A Ta
    40nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS4435A
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    2.5W Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    17m Ω @ 9A, 10V
    2V @ 250μA
    2.01pF @ 15V
    9A Ta
    30nC @ 5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    LOGIC LEVEL COMPATIBLE
    260
    30
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    9A
    0.017Ohm
    30V
  • FDS4770
    -
    -
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    -
    -
    -
    MATTE TIN
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    1
    -
    2.5W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    7.5m Ω @ 13.2A, 10V
    5V @ 250μA
    2.819pF @ 20V
    13.2A Ta
    67nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    -
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    13.2A
    0.0075Ohm
    40V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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