FDS4435BZ

Fairchild/ON Semiconductor FDS4435BZ

Part Number:
FDS4435BZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478117-FDS4435BZ
Description:
MOSFET P-CH 30V 8.8A 8-SOIC
ECAD Model:
Datasheet:
FDS4435BZ

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Specifications
Fairchild/ON Semiconductor FDS4435BZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4435BZ.
  • Package / Case
    SO-8
  • Packaging
    Tape & Reel (TR)
  • RoHS Status
    RoHS Compliant
Description
FDS4435BZ Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet FDS4435BZ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDS4435BZ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDS4435BZ More Descriptions
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ
P-Channel 30 V 20 mO Surface Mount PowerTrench Mosfet - SOIC-8
ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC
This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Product Comparison
The three parts on the right have similar specifications to FDS4435BZ.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Mounting Type
    Operating Temperature
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • FDS4435BZ
    FDS4435BZ
    SO-8
    Tape & Reel (TR)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS4780
    8-SOIC (0.154, 3.90mm Width)
    Tape & Reel (TR)
    -
    Surface Mount
    -55°C~150°C TJ
    PowerTrench®
    2003
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    10.5m Ω @ 10.8A, 10V
    5V @ 250μA
    1686pF @ 20V
    10.8A Ta
    40nC @ 10V
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDS4435A
    8-SOIC (0.154, 3.90mm Width)
    Tape & Reel (TR)
    ROHS3 Compliant
    Surface Mount
    -55°C~150°C TJ
    PowerTrench®
    -
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    P-Channel
    17m Ω @ 9A, 10V
    2V @ 250μA
    2.01pF @ 15V
    9A Ta
    30nC @ 5V
    30V
    4.5V 10V
    ±20V
    YES
    SILICON
    e3
    yes
    8
    MATTE TIN
    LOGIC LEVEL COMPATIBLE
    DUAL
    GULL WING
    260
    30
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    9A
    0.017Ohm
    30V
  • FDS4770
    8-SOIC (0.154, 3.90mm Width)
    Tape & Reel (TR)
    ROHS3 Compliant
    Surface Mount
    -55°C~150°C TJ
    PowerTrench®
    -
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    7.5m Ω @ 13.2A, 10V
    5V @ 250μA
    2.819pF @ 20V
    13.2A Ta
    67nC @ 10V
    40V
    10V
    ±20V
    YES
    SILICON
    e3
    yes
    8
    MATTE TIN
    -
    DUAL
    GULL WING
    260
    NOT SPECIFIED
    8
    R-PDSO-G8
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    13.2A
    0.0075Ohm
    40V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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