Fairchild/ON Semiconductor FDS4435BZ_F085
- Part Number:
- FDS4435BZ_F085
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481703-FDS4435BZ_F085
- Description:
- MOSFET P-CH 30V 8-SOIC
- Datasheet:
- FDS4435BZ_F085
Fairchild/ON Semiconductor FDS4435BZ_F085 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDS4435BZ_F085.
- Vgs(th) (Max) @ Id:3V @ 250µA
- Vgs (Max):±25V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOIC
- Series:Automotive, AEC-Q101, PowerTrench®
- Rds On (Max) @ Id, Vgs:20 mOhm @ 8.8A, 10V
- Power Dissipation (Max):2.5W (Ta)
- Packaging:Tape & Reel (TR)
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds:1845pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
- FET Type:P-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
We can supply Fairchild/ON Semiconductor FDS4435BZ_F085, use the request quote form to request FDS4435BZ_F085 pirce, Fairchild/ON Semiconductor Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDS4435BZ_F085.The price and lead time for FDS4435BZ_F085 depending on the quantity required, availability and warehouse location.
FDS4435BZ_F085 More Descriptions
Trans MOSFET P-CH 30V 8.8A Automotive 8-Pin SOIC N T/R
P-Channel 30 V 20 mOhm SMT PowerTrench Mosfet SOIC-8
P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs
P-Channel 30 V 20 mOhm SMT PowerTrench Mosfet SOIC-8
P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs
The three parts on the right have similar specifications to FDS4435BZ_F085.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Mounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusReach Compliance CodeCase ConnectionPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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FDS4435BZ_F0853V @ 250µA±25VMOSFET (Metal Oxide)8-SOICAutomotive, AEC-Q101, PowerTrench®20 mOhm @ 8.8A, 10V2.5W (Ta)Tape & Reel (TR)8-SOIC (0.154", 3.90mm Width)-55°C ~ 150°C (TJ)Surface Mount1845pF @ 15V40nC @ 10VP-Channel-4.5V, 10V30V8.8A (Ta)---------------------------------------------
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------------------Surface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)PowerTrench®2003Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel10.5m Ω @ 10.8A, 10V5V @ 250μA1686pF @ 20V10.8A Ta40nC @ 10V40V10V±20V-------------------------
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------------------Surface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel7.5m Ω @ 13.2A, 10V5V @ 250μA2.819pF @ 20V13.2A Ta67nC @ 10V40V10V±20VYESSILICONe3yes8MATTE TINDUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING13.2A0.0075Ohm40VROHS3 Compliant----
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------------------Surface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)MOSFET (Metal Oxide)3W TaN-Channel10.5m Ω @ 13A, 10V5V @ 250μA1.75pF @ 20V13A Ta40nC @ 10V40V10V±20VYESSILICONe4yes8NICKEL PALLADIUM GOLDDUALGULL WING260NOT SPECIFIED8R-PDSO-G8COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING13A0.0105Ohm40VROHS3 CompliantunknownDRAIN60A200 mJ
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