Fairchild/ON Semiconductor FDPF8N50NZF
- Part Number:
- FDPF8N50NZF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849772-FDPF8N50NZF
- Description:
- MOSFET N-CH 500V 7A TO-220F
- Datasheet:
- FDPF8N50NZF
Fairchild/ON Semiconductor FDPF8N50NZF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF8N50NZF.
- Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time9 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesUniFET-II™
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation40W
- Case ConnectionISOLATED
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1 Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds735pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time34ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)7A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain Current-Max (Abs) (ID)7A
- Drain-source On Resistance-Max1Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)28A
- Height15.87mm
- Length10.16mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDPF8N50NZF Overview
A device's maximal input capacitance is 735pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
FDPF8N50NZF Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 28A.
FDPF8N50NZF Applications
There are a lot of ON Semiconductor
FDPF8N50NZF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 735pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
FDPF8N50NZF Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 28A.
FDPF8N50NZF Applications
There are a lot of ON Semiconductor
FDPF8N50NZF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
FDPF8N50NZF More Descriptions
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 7 A, 1 Ω, TO-220F
Trans MOSFET N-CH 500V 7A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 7A I(D), 500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, UNITFET, 500V, 7A, TO-220F;; N CH MOSFET, UNITFET, 500V, 7A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Trans MOSFET N-CH 500V 7A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 7A I(D), 500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, UNITFET, 500V, 7A, TO-220F;; N CH MOSFET, UNITFET, 500V, 7A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
The three parts on the right have similar specifications to FDPF8N50NZF.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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FDPF8N50NZFACTIVE (Last Updated: 20 hours ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET-II™2010e3yesActive1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)140W TcSingleENHANCEMENT MODE40WISOLATED17 nsN-ChannelSWITCHING1 Ω @ 3.5A, 10V5V @ 250μA735pF @ 25V7A Tc18nC @ 10V34ns10V±25V27 ns43 ns7ATO-220AB25V7A1Ohm500V28A15.87mm10.16mm4.7mmNoROHS3 Compliant---
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---Through HoleTO-220-3 Full Pack----55°C~150°C TJTubeUniFET™---Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------N-Channel-300mOhm @ 8.5A, 10V5V @ 250μA2110pF @ 25V17A Tc50nC @ 10V-----------------TO-220F450V
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---Through HoleTO-220-3 Full Pack, Formed Leads----55°C~150°C TJTubePowerTrench®---Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-33.8W Tc-----N-Channel-38.2mOhm @ 5.9A, 10V4.5V @ 250μA1.8pF @ 25V20A Tc35nC @ 10V-10V±20V-------------ROHS3 CompliantTO-220F-3 (Y-Forming)100V
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ACTIVE (Last Updated: 4 days ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET™2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)141W TcSingleENHANCEMENT MODE41WISOLATED16 nsN-ChannelSWITCHING140m Ω @ 9A, 10V5V @ 250μA1180pF @ 25V18A Tc26nC @ 10V50ns10V±30V40 ns50 ns18ATO-220AB30V--200V72A16.07mm10.36mm4.9mmNoROHS3 Compliant--
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