FDPF8N50NZF

Fairchild/ON Semiconductor FDPF8N50NZF

Part Number:
FDPF8N50NZF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849772-FDPF8N50NZF
Description:
MOSFET N-CH 500V 7A TO-220F
ECAD Model:
Datasheet:
FDPF8N50NZF

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Specifications
Fairchild/ON Semiconductor FDPF8N50NZF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF8N50NZF.
  • Lifecycle Status
    ACTIVE (Last Updated: 20 hours ago)
  • Factory Lead Time
    9 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    2.27g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    UniFET-II™
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    40W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1 Ω @ 3.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    735pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
  • Rise Time
    34ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    27 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    7A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain-source On Resistance-Max
    1Ohm
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    28A
  • Height
    15.87mm
  • Length
    10.16mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDPF8N50NZF Overview
A device's maximal input capacitance is 735pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).

FDPF8N50NZF Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 28A.


FDPF8N50NZF Applications
There are a lot of ON Semiconductor
FDPF8N50NZF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
FDPF8N50NZF More Descriptions
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 7 A, 1 Ω, TO-220F
Trans MOSFET N-CH 500V 7A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 7A I(D), 500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, UNITFET, 500V, 7A, TO-220F;; N CH MOSFET, UNITFET, 500V, 7A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FDPF8N50NZF.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • FDPF8N50NZF
    FDPF8N50NZF
    ACTIVE (Last Updated: 20 hours ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET-II™
    2010
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    40W
    ISOLATED
    17 ns
    N-Channel
    SWITCHING
    1 Ω @ 3.5A, 10V
    5V @ 250μA
    735pF @ 25V
    7A Tc
    18nC @ 10V
    34ns
    10V
    ±25V
    27 ns
    43 ns
    7A
    TO-220AB
    25V
    7A
    1Ohm
    500V
    28A
    15.87mm
    10.16mm
    4.7mm
    No
    ROHS3 Compliant
    -
    -
    -
  • FDPF17N45T
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -55°C~150°C TJ
    Tube
    UniFET™
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    300mOhm @ 8.5A, 10V
    5V @ 250μA
    2110pF @ 25V
    17A Tc
    50nC @ 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220F
    450V
  • FDPF3860TYDTU
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack, Formed Leads
    -
    -
    -
    -55°C~150°C TJ
    Tube
    PowerTrench®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    33.8W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    38.2mOhm @ 5.9A, 10V
    4.5V @ 250μA
    1.8pF @ 25V
    20A Tc
    35nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    TO-220F-3 (Y-Forming)
    100V
  • FDPF18N20FT
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    41W Tc
    Single
    ENHANCEMENT MODE
    41W
    ISOLATED
    16 ns
    N-Channel
    SWITCHING
    140m Ω @ 9A, 10V
    5V @ 250μA
    1180pF @ 25V
    18A Tc
    26nC @ 10V
    50ns
    10V
    ±30V
    40 ns
    50 ns
    18A
    TO-220AB
    30V
    -
    -
    200V
    72A
    16.07mm
    10.36mm
    4.9mm
    No
    ROHS3 Compliant
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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