Fairchild/ON Semiconductor FDPF7N60NZT
- Part Number:
- FDPF7N60NZT
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484221-FDPF7N60NZT
- Description:
- MOSFET N-CH 600V 6.5A TO-220F
- Datasheet:
- FDPF7N60NZT
Fairchild/ON Semiconductor FDPF7N60NZT technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF7N60NZT.
- Lifecycle StatusACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Weight2.27g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesUniFET-II™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Channels1
- Power Dissipation-Max33W Tc
- Element ConfigurationSingle
- Turn On Delay Time17.5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.25 Ω @ 3.25A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds730pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.5A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time30ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)6.5A
- Gate to Source Voltage (Vgs)30V
- RoHS StatusROHS3 Compliant
FDPF7N60NZT Overview
A device's maximal input capacitance is 730pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FDPF7N60NZT Features
a continuous drain current (ID) of 6.5A
the turn-off delay time is 40 ns
a 600V drain to source voltage (Vdss)
FDPF7N60NZT Applications
There are a lot of ON Semiconductor
FDPF7N60NZT applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 730pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FDPF7N60NZT Features
a continuous drain current (ID) of 6.5A
the turn-off delay time is 40 ns
a 600V drain to source voltage (Vdss)
FDPF7N60NZT Applications
There are a lot of ON Semiconductor
FDPF7N60NZT applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
FDPF7N60NZT More Descriptions
N-Channel Power MOSFET, UniFETTM II, 600 V, 6.5 A, 1.25 Ω, TO-220F
Power Field-Effect Transistor, 6.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220F Rail
RAIL/UNIFET2 600V N-CHANNEL MOSFET, TO220F SINGLE GAUGE
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Power Field-Effect Transistor, 6.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220F Rail
RAIL/UNIFET2 600V N-CHANNEL MOSFET, TO220F SINGLE GAUGE
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
The three parts on the right have similar specifications to FDPF7N60NZT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseWeightOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)RoHS StatusNumber of PinsTransistor Element MaterialPublishedNumber of TerminationsResistanceHTS CodeQualification StatusNumber of ElementsOperating ModePower DissipationCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthLead FreeSupplier Device PackageRadiation HardeningView Compare
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FDPF7N60NZTACTIVE (Last Updated: 19 hours ago)4 WeeksThrough HoleThrough HoleTO-220-3 Full Pack2.27g-55°C~150°C TJTubeUniFET-II™e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED133W TcSingle17.5 nsN-Channel1.25 Ω @ 3.25A, 10V5V @ 250μA730pF @ 25V6.5A Tc17nC @ 10V30ns600V10V±30V25 ns40 ns6.5A30VROHS3 Compliant-----------------------
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ACTIVE (Last Updated: 4 days ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack2.27g-55°C~150°C TJTubeUniFET™e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED-38.5W TcSingle45 nsN-Channel260m Ω @ 10A, 10V5V @ 250μA3390pF @ 25V20A Tc65nC @ 10V120ns-10V±30V60 ns100 ns20A30VROHS3 Compliant3SILICON20043260mOhm8541.29.00.95Not Qualified1ENHANCEMENT MODE38.5WISOLATEDSWITCHINGTO-220AB500V80A1110 mJ16.07mm10.36mm4.9mmLead Free--
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---Through HoleTO-220-3 Full Pack--55°C~150°C TJTubeUniFET™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------N-Channel300mOhm @ 8.5A, 10V5V @ 250μA2110pF @ 25V17A Tc50nC @ 10V-450V---------------------------TO-220F-
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ACTIVE (Last Updated: 4 days ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack2.27g-55°C~150°C TJTubeUniFET™e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)----41W TcSingle16 nsN-Channel140m Ω @ 9A, 10V5V @ 250μA1180pF @ 25V18A Tc26nC @ 10V50ns-10V±30V40 ns50 ns18A30VROHS3 Compliant3SILICON20133---1ENHANCEMENT MODE41WISOLATEDSWITCHINGTO-220AB200V72A-16.07mm10.36mm4.9mm--No
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