FDPF7N60NZT

Fairchild/ON Semiconductor FDPF7N60NZT

Part Number:
FDPF7N60NZT
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2484221-FDPF7N60NZT
Description:
MOSFET N-CH 600V 6.5A TO-220F
ECAD Model:
Datasheet:
FDPF7N60NZT

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Specifications
Fairchild/ON Semiconductor FDPF7N60NZT technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF7N60NZT.
  • Lifecycle Status
    ACTIVE (Last Updated: 19 hours ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Weight
    2.27g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    UniFET-II™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Channels
    1
  • Power Dissipation-Max
    33W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    17.5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.25 Ω @ 3.25A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    730pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    30ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    6.5A
  • Gate to Source Voltage (Vgs)
    30V
  • RoHS Status
    ROHS3 Compliant
Description
FDPF7N60NZT Overview
A device's maximal input capacitance is 730pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDPF7N60NZT Features
a continuous drain current (ID) of 6.5A
the turn-off delay time is 40 ns
a 600V drain to source voltage (Vdss)


FDPF7N60NZT Applications
There are a lot of ON Semiconductor
FDPF7N60NZT applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
FDPF7N60NZT More Descriptions
N-Channel Power MOSFET, UniFETTM II, 600 V, 6.5 A, 1.25 Ω, TO-220F
Power Field-Effect Transistor, 6.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220F Rail
RAIL/UNIFET2 600V N-CHANNEL MOSFET, TO220F SINGLE GAUGE
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FDPF7N60NZT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    RoHS Status
    Number of Pins
    Transistor Element Material
    Published
    Number of Terminations
    Resistance
    HTS Code
    Qualification Status
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Lead Free
    Supplier Device Package
    Radiation Hardening
    View Compare
  • FDPF7N60NZT
    FDPF7N60NZT
    ACTIVE (Last Updated: 19 hours ago)
    4 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    2.27g
    -55°C~150°C TJ
    Tube
    UniFET-II™
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    1
    33W Tc
    Single
    17.5 ns
    N-Channel
    1.25 Ω @ 3.25A, 10V
    5V @ 250μA
    730pF @ 25V
    6.5A Tc
    17nC @ 10V
    30ns
    600V
    10V
    ±30V
    25 ns
    40 ns
    6.5A
    30V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDPF20N50FT
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    2.27g
    -55°C~150°C TJ
    Tube
    UniFET™
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    38.5W Tc
    Single
    45 ns
    N-Channel
    260m Ω @ 10A, 10V
    5V @ 250μA
    3390pF @ 25V
    20A Tc
    65nC @ 10V
    120ns
    -
    10V
    ±30V
    60 ns
    100 ns
    20A
    30V
    ROHS3 Compliant
    3
    SILICON
    2004
    3
    260mOhm
    8541.29.00.95
    Not Qualified
    1
    ENHANCEMENT MODE
    38.5W
    ISOLATED
    SWITCHING
    TO-220AB
    500V
    80A
    1110 mJ
    16.07mm
    10.36mm
    4.9mm
    Lead Free
    -
    -
  • FDPF17N45T
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -55°C~150°C TJ
    Tube
    UniFET™
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    300mOhm @ 8.5A, 10V
    5V @ 250μA
    2110pF @ 25V
    17A Tc
    50nC @ 10V
    -
    450V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220F
    -
  • FDPF18N20FT
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    2.27g
    -55°C~150°C TJ
    Tube
    UniFET™
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    41W Tc
    Single
    16 ns
    N-Channel
    140m Ω @ 9A, 10V
    5V @ 250μA
    1180pF @ 25V
    18A Tc
    26nC @ 10V
    50ns
    -
    10V
    ±30V
    40 ns
    50 ns
    18A
    30V
    ROHS3 Compliant
    3
    SILICON
    2013
    3
    -
    -
    -
    1
    ENHANCEMENT MODE
    41W
    ISOLATED
    SWITCHING
    TO-220AB
    200V
    72A
    -
    16.07mm
    10.36mm
    4.9mm
    -
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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