Fairchild/ON Semiconductor FDPF7N60NZ
- Part Number:
- FDPF7N60NZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2483896-FDPF7N60NZ
- Description:
- MOSFET N-CH 600V 6.5A TO-220F
- Datasheet:
- FDPF7N60NZ
Fairchild/ON Semiconductor FDPF7N60NZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF7N60NZ.
- Lifecycle StatusACTIVE (Last Updated: 19 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesUniFET-II™
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.25Ohm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max33W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation33W
- Case ConnectionISOLATED
- Turn On Delay Time17.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.25 Ω @ 3.25A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds730pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.5A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time70ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)60 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)6.5A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)26A
- Avalanche Energy Rating (Eas)275 mJ
- Height16.07mm
- Length10.36mm
- Width4.9mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDPF7N60NZ Description
The FDPF7N60NZ is an N-Channel UniFET? II MOSFET, 600 V, 6.5 A, 1.25 Ω. The high voltage UniFET? II MOSFET family from Fairchild Semiconductor is based on cutting-edge planar stripe and DMOS technology. This advanced MOSFET series offers more excellent switching performance, higher avalanche energy strength, and the lowest on-state resistance among planar MOSFET. The UniFET II MOSFET can endure over 2kV HBM surge stress thanks to an integrated gate-source ESD diode. For switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDPF7N60NZ Features
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
RoHS Compliant
RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 7 pF)
FDPF7N60NZ Applications
Uninterruptible Power Supply
AC-DC Power Supply
LCD/ LED/ PDP TV
Lighting
The FDPF7N60NZ is an N-Channel UniFET? II MOSFET, 600 V, 6.5 A, 1.25 Ω. The high voltage UniFET? II MOSFET family from Fairchild Semiconductor is based on cutting-edge planar stripe and DMOS technology. This advanced MOSFET series offers more excellent switching performance, higher avalanche energy strength, and the lowest on-state resistance among planar MOSFET. The UniFET II MOSFET can endure over 2kV HBM surge stress thanks to an integrated gate-source ESD diode. For switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDPF7N60NZ Features
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
RoHS Compliant
RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 7 pF)
FDPF7N60NZ Applications
Uninterruptible Power Supply
AC-DC Power Supply
LCD/ LED/ PDP TV
Lighting
FDPF7N60NZ More Descriptions
N-Channel Power MOSFET, UniFETTM II, 600 V, 6.5 A, 1.25 Ω, TO-220F
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220FP Rail
Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Trans MOSFET N-CH 600V 6.5A 3-Pin(3 Tab) TO-220FP Rail
Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
The three parts on the right have similar specifications to FDPF7N60NZ.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)View Compare
-
FDPF7N60NZACTIVE (Last Updated: 19 hours ago)6 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET-II™2013e3yesActive1 (Unlimited)3EAR991.25OhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)133W TcSingleENHANCEMENT MODE33WISOLATED17.5 nsN-ChannelSWITCHING1.25 Ω @ 3.25A, 10V5V @ 250μA730pF @ 25V6.5A Tc17nC @ 10V70ns10V±30V60 ns40 ns6.5ATO-220AB30V600V26A275 mJ16.07mm10.36mm4.9mmNoROHS3 CompliantLead Free--
-
ACTIVE (Last Updated: 4 days ago)7 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET-II™2013e3yesActive1 (Unlimited)3EAR99-Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)128W TcSingleENHANCEMENT MODE28WISOLATED12.7 nsN-ChannelSWITCHING2.5 Ω @ 1.9A, 10V5V @ 250μA510pF @ 25V3.8A Tc10.8nC @ 10V15.1ns10V±25V12.8 ns30.2 ns3.8ATO-220AB25V600V--16.07mm10.36mm4.9mmNoROHS3 Compliant--
-
--Through HoleThrough HoleTO-220-3 Full Pack----55°C~150°C TJTubeUniFET™2013--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-35W Tc-----N-Channel-290m Ω @ 7A, 10V5V @ 250μA1060pF @ 25V14A Tc25nC @ 10V-10V±30V--14A---------RoHS Compliant-300V
-
ACTIVE (Last Updated: 4 days ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET™2013e3yesActive1 (Unlimited)3EAR99-Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)141W TcSingleENHANCEMENT MODE41WISOLATED16 nsN-ChannelSWITCHING140m Ω @ 9A, 10V5V @ 250μA1180pF @ 25V18A Tc26nC @ 10V50ns10V±30V40 ns50 ns18ATO-220AB30V200V72A-16.07mm10.36mm4.9mmNoROHS3 Compliant--
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
02 February 2024
TL431AIDBZR Shunt Regulator Replacements, Working Principle, Typical Characteristics, Performance and Function
Ⅰ. Description of TL431AIDBZRⅡ. How does TL431AIDBZR work?Ⅲ. Typical characteristics of TL431AIDBZRⅣ. Performance of TL431AIDBZRⅤ. Specifications of TL431AIDBZRⅥ. How to adjust the output voltage of TL431AIDBZR?Ⅶ. Absolute maximum... -
02 February 2024
BQ7694003DBTR: Technical Parameters, Applications, Layout Guidelines and More
Ⅰ. Overview of BQ7694003DBTRⅡ. Technical parameters of BQ7694003DBTRⅢ. Functional block diagram of BQ7694003DBTRⅣ. Where is BQ7694003DBTR used?Ⅴ. BQ7694003DBTR layout guidelinesⅥ. How does BQ7694003DBTR achieve the balance and protection... -
18 February 2024
L6599DTR Technical Parameters, Working Principle, Characteristics and L6599DTR vs L6599D
Ⅰ. Introduction to L6599DTRⅡ. Technical parameters of L6599DTRⅢ. Working principle of L6599DTRⅣ. Block diagram of L6599DTRⅤ. What are the characteristics of L6599DTR?Ⅵ. How does the output current protection... -
18 February 2024
LNK364PN Manufacturer, Package, Applications and Specifications
Ⅰ. What is LNK364PN?Ⅱ. Manufacturer of LNK364PNⅢ. Package of LNK364PNⅣ. How to measure the quality of LNK364PN?Ⅴ. Pins and functions of LNK364PNⅥ. Applications of LNK364PNⅦ. Specifications of LNK364PNⅧ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.