Fairchild/ON Semiconductor FDPF7N50U_G
- Part Number:
- FDPF7N50U_G
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3554289-FDPF7N50U_G
- Description:
- MOSFET N-CH 500V 5A TO-220F
- Datasheet:
- FDPF7N50U_G
Fairchild/ON Semiconductor FDPF7N50U_G technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF7N50U_G.
- Surface MountNO
- Number of Terminals3
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeicon-pbfree yes
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- HTS Code8541.29.00.95
- Terminal PositionSINGLE
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)5A
- Drain-source On Resistance-Max1.5Ohm
- Pulsed Drain Current-Max (IDM)20A
- DS Breakdown Voltage-Min500V
- Avalanche Energy Rating (Eas)125 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- RoHS StatusRoHS Compliant
FDPF7N50U_G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 125 mJ.Its drain current is 5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500V.
FDPF7N50U_G Features
the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 20A.
FDPF7N50U_G Applications
There are a lot of Fairchild Semiconductor Corporation
FDPF7N50U_G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 125 mJ.Its drain current is 5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500V.
FDPF7N50U_G Features
the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 20A.
FDPF7N50U_G Applications
There are a lot of Fairchild Semiconductor Corporation
FDPF7N50U_G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDPF7N50U_G More Descriptions
N-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 5A 500V 1.5Ohm 125mJ
N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5Ω
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5Ω
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
The three parts on the right have similar specifications to FDPF7N50U_G.
-
ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyRoHS StatusLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceSubcategoryTechnologyQualification StatusPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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FDPF7N50U_GNO3SILICONe3icon-pbfree yesEAR99MATTE TIN8541.29.00.95SINGLETHROUGH-HOLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T31SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGN-CHANNELTO-220AB5A1.5Ohm20A500V125 mJMETAL-OXIDE SEMICONDUCTORRoHS Compliant-------------------------------------------
-
--SILICONe3yesEAR99Tin (Sn)8541.29.00.95--NOT SPECIFIEDnot_compliantNOT SPECIFIED--1-ENHANCEMENT MODEISOLATEDSWITCHING-TO-220AB--80A-1110 mJ-ROHS3 CompliantACTIVE (Last Updated: 4 days ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27g-55°C~150°C TJTubeUniFET™2004Active1 (Unlimited)3260mOhmFET General Purpose PowerMOSFET (Metal Oxide)Not Qualified38.5W TcSingle38.5W45 nsN-Channel260m Ω @ 10A, 10V5V @ 250μA3390pF @ 25V20A Tc65nC @ 10V120ns10V±30V60 ns100 ns20A30V500V16.07mm10.36mm4.9mmLead Free--
-
--------------------------------Through HoleTO-220-3 Full Pack---55°C~150°C TJTubeUniFET™-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----N-Channel300mOhm @ 8.5A, 10V5V @ 250μA2110pF @ 25V17A Tc50nC @ 10V------------TO-220F450V
-
----------------------------ROHS3 Compliant---Through HoleTO-220-3 Full Pack, Formed Leads---55°C~150°C TJTubePowerTrench®-Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-33.8W Tc---N-Channel38.2mOhm @ 5.9A, 10V4.5V @ 250μA1.8pF @ 25V20A Tc35nC @ 10V-10V±20V---------TO-220F-3 (Y-Forming)100V
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