FDPF7N50U_G

Fairchild/ON Semiconductor FDPF7N50U_G

Part Number:
FDPF7N50U_G
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3554289-FDPF7N50U_G
Description:
MOSFET N-CH 500V 5A TO-220F
ECAD Model:
Datasheet:
FDPF7N50U_G

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Specifications
Fairchild/ON Semiconductor FDPF7N50U_G technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF7N50U_G.
  • Surface Mount
    NO
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • JESD-609 Code
    e3
  • Pbfree Code
    icon-pbfree yes
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • HTS Code
    8541.29.00.95
  • Terminal Position
    SINGLE
  • Terminal Form
    THROUGH-HOLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain-source On Resistance-Max
    1.5Ohm
  • Pulsed Drain Current-Max (IDM)
    20A
  • DS Breakdown Voltage-Min
    500V
  • Avalanche Energy Rating (Eas)
    125 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • RoHS Status
    RoHS Compliant
Description
FDPF7N50U_G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 125 mJ.Its drain current is 5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 20A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 500V.

FDPF7N50U_G Features
the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 20A.


FDPF7N50U_G Applications
There are a lot of Fairchild Semiconductor Corporation
FDPF7N50U_G applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
FDPF7N50U_G More Descriptions
N-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 5A 500V 1.5Ohm 125mJ
N-Channel UniFETTM Ultra FRFETTM MOSFET 500V, 5A, 1.5Ω
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FDPF7N50U_G.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    ECCN Code
    Terminal Finish
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    RoHS Status
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Subcategory
    Technology
    Qualification Status
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    View Compare
  • FDPF7N50U_G
    FDPF7N50U_G
    NO
    3
    SILICON
    e3
    icon-pbfree yes
    EAR99
    MATTE TIN
    8541.29.00.95
    SINGLE
    THROUGH-HOLE
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    3
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    N-CHANNEL
    TO-220AB
    5A
    1.5Ohm
    20A
    500V
    125 mJ
    METAL-OXIDE SEMICONDUCTOR
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDPF20N50FT
    -
    -
    SILICON
    e3
    yes
    EAR99
    Tin (Sn)
    8541.29.00.95
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    -
    1
    -
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    -
    TO-220AB
    -
    -
    80A
    -
    1110 mJ
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    -55°C~150°C TJ
    Tube
    UniFET™
    2004
    Active
    1 (Unlimited)
    3
    260mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    Not Qualified
    38.5W Tc
    Single
    38.5W
    45 ns
    N-Channel
    260m Ω @ 10A, 10V
    5V @ 250μA
    3390pF @ 25V
    20A Tc
    65nC @ 10V
    120ns
    10V
    ±30V
    60 ns
    100 ns
    20A
    30V
    500V
    16.07mm
    10.36mm
    4.9mm
    Lead Free
    -
    -
  • FDPF17N45T
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -55°C~150°C TJ
    Tube
    UniFET™
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    N-Channel
    300mOhm @ 8.5A, 10V
    5V @ 250μA
    2110pF @ 25V
    17A Tc
    50nC @ 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220F
    450V
  • FDPF3860TYDTU
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    Through Hole
    TO-220-3 Full Pack, Formed Leads
    -
    -
    -55°C~150°C TJ
    Tube
    PowerTrench®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    33.8W Tc
    -
    -
    -
    N-Channel
    38.2mOhm @ 5.9A, 10V
    4.5V @ 250μA
    1.8pF @ 25V
    20A Tc
    35nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220F-3 (Y-Forming)
    100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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