Fairchild/ON Semiconductor FDPF770N15A
- Part Number:
- FDPF770N15A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479343-FDPF770N15A
- Description:
- MOSFET N-CH 150V 10A TO-220F
- Datasheet:
- FDPF770N15A
Fairchild/ON Semiconductor FDPF770N15A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF770N15A.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerTrench®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureULTRA-LOW RESISTANCE
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max21W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation20W
- Case ConnectionISOLATED
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs77m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds765pF @ 75V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs11.2nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)10A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.077Ohm
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)40A
- Height16.07mm
- Length10.36mm
- Width4.9mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDPF770N15A Description
This N-Channel MOSFET is made utilizing the cutting-edge PowerTrench? technology from Fairchild Semiconductor, which has been specifically designed to reduce the on-state resistance while preserving excellent switching performance. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
FDPF770N15A Features
? RDS(on) = 60 mQ (Typ.) @ 10 V, lD = 10 A
? Quick Switching
? Minimal Gate Fee
? Extremely Low RDS with High Performance Trench Technology (on)
? Exceptional Ability to Handle High Power and Current
? RoHS conformant
FDPF770N15A Applications
?Consumer electronics
?LED TV
?Synchronized rectifying for ATX, servers, and telecom power supplies
?A backup power supply
?Miniature Solar Inverter
This N-Channel MOSFET is made utilizing the cutting-edge PowerTrench? technology from Fairchild Semiconductor, which has been specifically designed to reduce the on-state resistance while preserving excellent switching performance. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
FDPF770N15A Features
? RDS(on) = 60 mQ (Typ.) @ 10 V, lD = 10 A
? Quick Switching
? Minimal Gate Fee
? Extremely Low RDS with High Performance Trench Technology (on)
? Exceptional Ability to Handle High Power and Current
? RoHS conformant
FDPF770N15A Applications
?Consumer electronics
?LED TV
?Synchronized rectifying for ATX, servers, and telecom power supplies
?A backup power supply
?Miniature Solar Inverter
FDPF770N15A More Descriptions
Trans MOSFET N-CH Si 150V 10A 3-Pin(3 Tab) TO-220F Rail
N-Channel PowerTrench® MOSFET 150V, 10A, 77mΩ
Single N-Channel 150 V 21 W 11.2 nC Silicon Through Hole Mosfet - TO-220F
MOSFET, N-CH, 150V, 10A, 150DEG C, 21W; Available until stocks are exhausted
Power Field-Effect Transistor, 10A I(D), 150V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
N-Channel PowerTrench® MOSFET 150V, 10A, 77mΩ
Single N-Channel 150 V 21 W 11.2 nC Silicon Through Hole Mosfet - TO-220F
MOSFET, N-CH, 150V, 10A, 150DEG C, 21W; Available until stocks are exhausted
Power Field-Effect Transistor, 10A I(D), 150V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The three parts on the right have similar specifications to FDPF770N15A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusResistancePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusAvalanche Energy Rating (Eas)Lead FreeSupplier Device PackageDrain to Source Voltage (Vdss)View Compare
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FDPF770N15AACTIVE (Last Updated: 6 days ago)8 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubePowerTrench®2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)ULTRA-LOW RESISTANCE8541.29.00.95FET General Purpose PowerMOSFET (Metal Oxide)121W TcSingleENHANCEMENT MODE20WISOLATED12 nsN-ChannelSWITCHING77m Ω @ 10A, 10V4V @ 250μA765pF @ 75V10A Tc11.2nC @ 10V8ns10V±20V3 ns15 ns10ATO-220AB20V0.077Ohm150V40A16.07mm10.36mm4.9mmNoROHS3 Compliant----------
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ACTIVE (Last Updated: 4 days ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET™2004e3yesActive1 (Unlimited)3EAR99Tin (Sn)-8541.29.00.95FET General Purpose PowerMOSFET (Metal Oxide)138.5W TcSingleENHANCEMENT MODE38.5WISOLATED45 nsN-ChannelSWITCHING260m Ω @ 10A, 10V5V @ 250μA3390pF @ 25V20A Tc65nC @ 10V120ns10V±30V60 ns100 ns20ATO-220AB30V-500V80A16.07mm10.36mm4.9mm-ROHS3 Compliant260mOhmNOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified1110 mJLead Free--
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---Through HoleTO-220-3 Full Pack, Formed Leads----55°C~150°C TJTubePowerTrench®---Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-33.8W Tc-----N-Channel-38.2mOhm @ 5.9A, 10V4.5V @ 250μA1.8pF @ 25V20A Tc35nC @ 10V-10V±20V------------ROHS3 Compliant-------TO-220F-3 (Y-Forming)100V
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--Through HoleThrough HoleTO-220-3 Full Pack----55°C~150°C TJTubeUniFET™2013--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-35W Tc-----N-Channel-290m Ω @ 7A, 10V5V @ 250μA1060pF @ 25V14A Tc25nC @ 10V-10V±30V--14A---------RoHS Compliant--------300V
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