Fairchild/ON Semiconductor FDPF51N25

Name: FDPF51N25
Brand: Fairchild/ON Semiconductor
SKU: 2848526-FDPF51N25
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDPF51N25

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848526-FDPF51N25

Description:: MOSFET N-CH 250V 51A TO-220F

ECAD Model:

Datasheet:: FDPF51N25

Specifications

Fairchild/ON Semiconductor FDPF51N25 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF51N25.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
9 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
60MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
28A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
38W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
117W
Case Connection
ISOLATED
Turn On Delay Time
62 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 25.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3410pF @ 25V
Current - Continuous Drain (Id) @ 25°C
51A Tc
Gate Charge (Qg) (Max) @ Vgs
70nC @ 10V
Rise Time
465ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
130 ns
Turn-Off Delay Time
98 ns
Continuous Drain Current (ID)
51A
Threshold Voltage
5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Dual Supply Voltage
250V
Nominal Vgs
5 V
Height
16.07mm
Length
10.36mm
Width
4.9mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDPF51N25 Description

FDPF51N25 MOSFET can be described as a very high voltage MOSFET family that is based upon planar strips as well as DMOS technology. MOSFET FDPF51N25 is specifically designed to lower on-state resistance and improve switching performance, as well as higher energy strength for avalanches. FDPF51N25 IC is ideal for power converter switching applications like power factor correction (PFC) Flat panel displays (FPD) Television power ATX, and electronic ballasts for lamps.

FDPF51N25 Features

RDS(on) = 48m? ( Typ.)@ VGS = 10V, ID = 25.5A
Low gate charge ( Typ. 55nC)
Low Crss ( Typ. 63pF)

FDPF51N25 Applications

This product is general usage and suitable for many different applications.
PDP TV
Lighting
Uninterruptible Power Supplies
AC-DC Power Supplies

FDPF51N25 More Descriptions

N-Channel Power MOSFET, UniFETTM, 250V, 51A, 60mΩ, TO-220F
N-Channel 250 V 60 mOhm Flange Mount Mosfet - TO-220F
Trans MOSFET N-CH 250V 51A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 28A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET,N CH,250V,28A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:250V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:117W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:3620pF; Current Id Max:28A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.07°C/W; On State Resistance Max:60mohm; On State Resistance Typ:48mohm; Package / Case:TO-220F; Pin Configuration:G(1),D(2),S(3); Power Dissipation Pd:117W; Power Dissipation Pd:117W; Pulse Current Idm:112A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

Product Comparison

The three parts on the right have similar specifications to FDPF51N25.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
FDPF51N25

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

9 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.27g

SILICON

-55°C~150°C TJ

Tube

UniFET™

2016

e3

yes

Active

1 (Unlimited)

3

Through Hole

EAR99

60MOhm

Tin (Sn)

FET General Purpose Power

250V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

28A

NOT SPECIFIED

Not Qualified

1

38W Tc

Single

ENHANCEMENT MODE

117W

ISOLATED

62 ns

N-Channel

SWITCHING

60m Ω @ 25.5A, 10V

5V @ 250μA

3410pF @ 25V

51A Tc

70nC @ 10V

465ns

10V

±30V

130 ns

98 ns

51A

5V

TO-220AB

30V

250V

250V

5 V

16.07mm

10.36mm

4.9mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-
FDPF7N50F

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3 Full Pack

-

-

-

-55°C~150°C TJ

Tube

UniFET™

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

38.5W Tc

-

-

-

-

-

N-Channel

-

1.15Ohm @ 3A, 10V

5V @ 250μA

960pF @ 25V

6A Tc

20nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220F

500V

FDPF51N25 vs FDPF7N50F
FDPF3860TYDTU

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-220-3 Full Pack, Formed Leads

-

-

-

-55°C~150°C TJ

Tube

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

33.8W Tc

-

-

-

-

-

N-Channel

-

38.2mOhm @ 5.9A, 10V

4.5V @ 250μA

1.8pF @ 25V

20A Tc

35nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220F-3 (Y-Forming)

100V

FDPF51N25 vs FDPF3860TYDTU
FDPF14N30T

Fairchild/ON Semiconductor

-

-

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

-

-55°C~150°C TJ

Tube

UniFET™

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

35W Tc

-

-

-

-

-

N-Channel

-

290m Ω @ 7A, 10V

5V @ 250μA

1060pF @ 25V

14A Tc

25nC @ 10V

-

10V

±30V

-

-

14A

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

300V

FDPF51N25 vs FDPF14N30T