Fairchild/ON Semiconductor FDPF39N20
- Part Number:
- FDPF39N20
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479878-FDPF39N20
- Description:
- MOSFET N-CH 200V 39A TO-220F
- ECAD Model:
-
- Datasheet:
- FDPF39N20
Fairchild/ON Semiconductor FDPF39N20 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF39N20.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesUniFET™
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance66MOhm
- Terminal FinishTin (Sn)
- Additional FeatureFAST SWITCHING
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max37W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation37W
- Case ConnectionISOLATED
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs66m Ω @ 19.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2130pF @ 25V
- Current - Continuous Drain (Id) @ 25°C39A Tc
- Gate Charge (Qg) (Max) @ Vgs49nC @ 10V
- Rise Time160ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)150 ns
- Turn-Off Delay Time150 ns
- Continuous Drain Current (ID)39A
- Threshold Voltage5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage200V
- Avalanche Energy Rating (Eas)860 mJ
- Height16.07mm
- Length10.36mm
- Width4.9mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDPF39N20 Description
UniFETM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDPF39N20 Features Ros(on)= 66 mQ (Max.) @ VGs= 10V,lp= 19.5A Low Gate Charge (Typ. 38 nC) Low Crss (Typ. 57 pF) 100% Avalanche Tested
FDPF39N20 Applications PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply
FDPF39N20 Features Ros(on)= 66 mQ (Max.) @ VGs= 10V,lp= 19.5A Low Gate Charge (Typ. 38 nC) Low Crss (Typ. 57 pF) 100% Avalanche Tested
FDPF39N20 Applications PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply
FDPF39N20 More Descriptions
N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F
FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP
Trans MOSFET N-CH 200V 39A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP
Trans MOSFET N-CH 200V 39A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
The three parts on the right have similar specifications to FDPF39N20.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingNominal VgsDrain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)View Compare
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FDPF39N20ACTIVE (Last Updated: 4 days ago)4 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET™2013e3yesActive1 (Unlimited)3EAR9966MOhmTin (Sn)FAST SWITCHINGFET General Purpose PowerMOSFET (Metal Oxide)137W TcSingleENHANCEMENT MODE37WISOLATED30 nsN-ChannelSWITCHING66m Ω @ 19.5A, 10V5V @ 250μA2130pF @ 25V39A Tc49nC @ 10V160ns10V±30V150 ns150 ns39A5VTO-220AB30V200V860 mJ16.07mm10.36mm4.9mmNo SVHCNoROHS3 CompliantLead Free----- -
ACTIVE (Last Updated: 4 days ago)8 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubePowerTrench®2013e3yesActive1 (Unlimited)3EAR9942.5MOhm--FET General Purpose PowerMOSFET (Metal Oxide)162.5W TcSingleENHANCEMENT MODE62.5WISOLATED80 nsN-ChannelSWITCHING42.5m Ω @ 25A, 10V5V @ 250μA7280pF @ 25V25A Tc101nC @ 10V252ns10V±30V154 ns112 ns25A3.9VTO-220AB30V250V-16.07mm10.36mm4.9mmNo SVHCNoROHS3 CompliantLead FreeTin3.9 V--
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--Through HoleThrough HoleTO-220-3 Full Pack----55°C~150°C TJTubeUniFET™2013--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-35W Tc-----N-Channel-290m Ω @ 7A, 10V5V @ 250μA1060pF @ 25V14A Tc25nC @ 10V-10V±30V--14A----------RoHS Compliant---300V-
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ACTIVE (Last Updated: 4 days ago)9 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27gSILICON-55°C~150°C TJTubeUniFET™2013e3yesActive1 (Unlimited)3EAR99-Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)141W TcSingleENHANCEMENT MODE41WISOLATED16 nsN-ChannelSWITCHING140m Ω @ 9A, 10V5V @ 250μA1180pF @ 25V18A Tc26nC @ 10V50ns10V±30V40 ns50 ns18A-TO-220AB30V200V-16.07mm10.36mm4.9mm-NoROHS3 Compliant----72A
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