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FDPF18N50T

Fairchild/ON Semiconductor FDPF18N50T

Part Number:
FDPF18N50T
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479934-FDPF18N50T
Description:
MOSFET N-CH 500V 18A TO-220F
ECAD Model:
Datasheet:
FDPF18N50T

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Specifications
Fairchild/ON Semiconductor FDPF18N50T technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDPF18N50T.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    9 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    2.27g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    UniFET™
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    18A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    38.5W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    38.5W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    55 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    265m Ω @ 9A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2860pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Rise Time
    165ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    90 ns
  • Turn-Off Delay Time
    95 ns
  • Continuous Drain Current (ID)
    18A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.265Ohm
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    72A
  • Avalanche Energy Rating (Eas)
    945 mJ
  • Height
    16.07mm
  • Length
    10.36mm
  • Width
    4.9mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The FDPF18N50T is a 500 V, 18 A, 265 m N-Channel UniFETTM MOSFET. It belongs to the UniFETTM MOSFET family, which is an ON Semiconductor high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET has been designed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. This device series is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.

Features
? Low Gate Charge (Typ. 45 nC) ? Low Crss (Typ. 25 pF) ? 100% Avalanche Tested ? RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A ? Boost avalanche energy strength and improve switching performance

Applications
? LCD/LED/PDP TV ? Lighting ? Uninterruptible Power Supply ? Passive Element ? Radio Frequency Applications
FDPF18N50T More Descriptions
N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 mΩ, TO-220F
Trans MOSFET N-CH 500V 18A 3-Pin(3 Tab) TO-220F Rail - Rail/Tube
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:18A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:38.5W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FDPF18N50T.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Drain Current-Max (Abs) (ID)
    Radiation Hardening
    View Compare
  • FDPF18N50T
    FDPF18N50T
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    18A
    NOT SPECIFIED
    Not Qualified
    1
    38.5W Tc
    Single
    ENHANCEMENT MODE
    38.5W
    ISOLATED
    55 ns
    N-Channel
    SWITCHING
    265m Ω @ 9A, 10V
    5V @ 250μA
    2860pF @ 25V
    18A Tc
    60nC @ 10V
    165ns
    10V
    ±30V
    90 ns
    95 ns
    18A
    TO-220AB
    30V
    0.265Ohm
    500V
    72A
    945 mJ
    16.07mm
    10.36mm
    4.9mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • FDPF10N50FT
    FDPF10N50FT
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    42W Tc
    Single
    ENHANCEMENT MODE
    125W
    ISOLATED
    20 ns
    N-Channel
    SWITCHING
    850m Ω @ 4.5A, 10V
    5V @ 250μA
    1170pF @ 25V
    9A Tc
    24nC @ 10V
    40ns
    10V
    ±30V
    30 ns
    45 ns
    9A
    TO-220AB
    30V
    0.85Ohm
    500V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    9A
    No
    FDPF18N50T vs FDPF10N50FT
  • FDPF4N60NZ
    FDPF4N60NZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    7 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET-II™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    28W Tc
    Single
    ENHANCEMENT MODE
    28W
    ISOLATED
    12.7 ns
    N-Channel
    SWITCHING
    2.5 Ω @ 1.9A, 10V
    5V @ 250μA
    510pF @ 25V
    3.8A Tc
    10.8nC @ 10V
    15.1ns
    10V
    ±25V
    12.8 ns
    30.2 ns
    3.8A
    TO-220AB
    25V
    -
    600V
    -
    -
    16.07mm
    10.36mm
    4.9mm
    ROHS3 Compliant
    -
    -
    No
    FDPF18N50T vs FDPF4N60NZ
  • FDPF18N20FT
    FDPF18N20FT
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    2.27g
    SILICON
    -55°C~150°C TJ
    Tube
    UniFET™
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    41W Tc
    Single
    ENHANCEMENT MODE
    41W
    ISOLATED
    16 ns
    N-Channel
    SWITCHING
    140m Ω @ 9A, 10V
    5V @ 250μA
    1180pF @ 25V
    18A Tc
    26nC @ 10V
    50ns
    10V
    ±30V
    40 ns
    50 ns
    18A
    TO-220AB
    30V
    -
    200V
    72A
    -
    16.07mm
    10.36mm
    4.9mm
    ROHS3 Compliant
    -
    -
    No
    FDPF18N50T vs FDPF18N20FT
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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