Fairchild/ON Semiconductor FDMA1028NZ
- Part Number:
- FDMA1028NZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847545-FDMA1028NZ
- Description:
- MOSFET 2N-CH 20V 3.7A 6-MICROFET
- Datasheet:
- FDMA1028NZ
Fairchild/ON Semiconductor FDMA1028NZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMA1028NZ.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-VDFN Exposed Pad
- Number of Pins6
- Weight40mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2009
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance68MOhm
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- Max Power Dissipation1.4W
- Current Rating3.7A
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Case ConnectionDRAIN
- Turn On Delay Time8 ns
- Power - Max700mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs68m Ω @ 3.7A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds340pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
- Rise Time8ns
- Fall Time (Typ)8 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)3.7A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Dual Supply Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Height750μm
- Length2mm
- Width2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMA1028NZ Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA1028NZ Features 3.7 A, 20V RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V Low profile – 0.8 mm maximum – in the new packageMicroFET 2x2 mm HBM ESD protection level > 2kV (Note 3) RoHS Compliant Free from halogenated compounds and antimonyoxides
FDMA1028NZ Applications This product is general usage and suitable for many different applications.
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA1028NZ Features 3.7 A, 20V RDS(ON) = 68 mΩ @ VGS = 4.5V RDS(ON) = 86 mΩ @ VGS = 2.5V Low profile – 0.8 mm maximum – in the new packageMicroFET 2x2 mm HBM ESD protection level > 2kV (Note 3) RoHS Compliant Free from halogenated compounds and antimonyoxides
FDMA1028NZ Applications This product is general usage and suitable for many different applications.
FDMA1028NZ More Descriptions
PowerTrench® MOSFET, Dual N-Channel, 20V, 3.7A, 68mΩ
Transistor MOSFET Array Dual N-CH 20V 3.7A 6-Pin MicroFET T/R
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
DC DC Converters 1 (Unlimited) 1 7-SIP Module, 4 Leads Through Hole Isolated Module ITE (Commercial) ECONOLINE RKE (E-Series) (1W) -40°C~85°C 0.77Lx0.28W x 0.40 H 19.7mmx7.1mmx10.2mm Converter;DC-DC;5V@0.2A;4.5-5.5V In;Enclosed;PCB Mount;RKE-0505S/H Series
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, DUAL, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:6A; SMD Marking:028; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
Transistor MOSFET Array Dual N-CH 20V 3.7A 6-Pin MicroFET T/R
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
DC DC Converters 1 (Unlimited) 1 7-SIP Module, 4 Leads Through Hole Isolated Module ITE (Commercial) ECONOLINE RKE (E-Series) (1W) -40°C~85°C 0.77Lx0.28W x 0.40 H 19.7mmx7.1mmx10.2mm Converter;DC-DC;5V@0.2A;4.5-5.5V In;Enclosed;PCB Mount;RKE-0505S/H Series
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
MOSFET, DUAL, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:6A; SMD Marking:028; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
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