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FDB14N30TM

Fairchild/ON Semiconductor FDB14N30TM

Part Number:
FDB14N30TM
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478699-FDB14N30TM
Description:
MOSFET N-CH 300V 14A D2PAK
ECAD Model:
Datasheet:
FDB14N30TM

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Specifications
Fairchild/ON Semiconductor FDB14N30TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB14N30TM.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    2
  • Weight
    1.31247g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    UniFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    290MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    140W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    140W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    290m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1060pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Rise Time
    105ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    75 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    14A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    300V
  • Pulsed Drain Current-Max (IDM)
    56A
  • Dual Supply Voltage
    300V
  • Avalanche Energy Rating (Eas)
    330 mJ
  • Nominal Vgs
    5 V
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    11.33mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDB14N30TM Description The FDB14N30 is an N-Channel UniFETTM MOSFET that operates at 300V, 14A, and 290m* The UniFETTM MOSFET is part of Fairchild Semiconductor's high voltage MOSFET family using a planar stripe and DMOS technology platform. The MOSFET has been designed to reduce on-state resistance and to provide better switching performance and avalanche energy strength. In addition to power factor correction (PFC), flat panel displays (FPD), television power, and electronic lamp ballasts, this FDB14N30TM is also suitable for switching power converter applications.
FDB14N30TM Features 100% avalanche tested
RoHS compliant
RDS(on) = 290mΩ ( Max.)@ VGS = 10V, ID = 7A
Low gate charge ( Typ. 18nC)
Low Crss ( Typ. 17pF)
FDB14N30TM Applications Lighting
Uninterruptible Power Supply
AC-DC Power Supply
FDB14N30TM More Descriptions
N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, D2PAK
N-Channel 300 V 0.29 Ohm Surface Mount UniFET Mosfet - D2PAK-3
Trans MOSFET N-CH 300V 14A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 14A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:300V; On Resistance Rds(on):290mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:D2-PAK; Power Dissipation Pd:140W; Termination Type:SMD; Voltage Vds Typ:300V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Product Comparison
The three parts on the right have similar specifications to FDB14N30TM.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Published
    Terminal Finish
    JESD-30 Code
    Radiation Hardening
    Voltage - Rated DC
    Current Rating
    View Compare
  • FDB14N30TM
    FDB14N30TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    2
    1.31247g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    UniFET™
    e3
    yes
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    290MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    1
    140W Tc
    Single
    ENHANCEMENT MODE
    140W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    290m Ω @ 7A, 10V
    5V @ 250μA
    1060pF @ 25V
    14A Tc
    25nC @ 10V
    105ns
    10V
    ±30V
    75 ns
    30 ns
    14A
    5V
    30V
    300V
    56A
    300V
    330 mJ
    5 V
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDB12N50TM
    FDB12N50TM
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    9 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    UniFET™
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    EAR99
    650MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    1
    165W Tc
    Single
    ENHANCEMENT MODE
    165W
    DRAIN
    25 ns
    N-Channel
    SWITCHING
    650m Ω @ 6A, 10V
    5V @ 250μA
    1315pF @ 25V
    11.5A Tc
    30nC @ 10V
    60ns
    10V
    ±30V
    35 ns
    45 ns
    11.5A
    -
    30V
    500V
    46A
    -
    456 mJ
    -
    4.83mm
    10.67mm
    9.65mm
    -
    ROHS3 Compliant
    Lead Free
    2003
    Tin (Sn)
    R-PSSO-G2
    -
    -
    -
    FDB14N30TM vs FDB12N50TM
  • FDB12N50UTM_WS
    FDB12N50UTM_WS
    Fairchild/ON Semiconductor
    -
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    FRFET®
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    165W Tc
    Single
    -
    165W
    -
    35 ns
    N-Channel
    -
    800m Ω @ 5A, 10V
    5V @ 250μA
    1395pF @ 25V
    10A Tc
    30nC @ 10V
    45ns
    10V
    ±30V
    35 ns
    60 ns
    10A
    -
    30V
    500V
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    No
    -
    -
    FDB14N30TM vs FDB12N50UTM_WS
  • FDB13AN06A0
    FDB13AN06A0
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    13.5MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    1
    115W Tc
    Single
    ENHANCEMENT MODE
    115W
    DRAIN
    9 ns
    N-Channel
    SWITCHING
    13.5m Ω @ 62A, 10V
    4V @ 250μA
    1350pF @ 25V
    10.9A Ta 62A Tc
    29nC @ 10V
    96ns
    6V 10V
    ±20V
    26 ns
    24 ns
    62A
    4V
    20V
    60V
    -
    60V
    56 mJ
    4 V
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    2003
    -
    R-PSSO-G2
    -
    60V
    62A
    FDB14N30TM vs FDB13AN06A0
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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