Fairchild/ON Semiconductor FCPF11N60

Name: FCPF11N60
Brand: Fairchild/ON Semiconductor
SKU: 2486468-FCPF11N60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FCPF11N60

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2486468-FCPF11N60

Description:: MOSFET N-CH 600V 11A TO220F

ECAD Model:

Datasheet:: FCPF11N60

Specifications

Fairchild/ON Semiconductor FCPF11N60 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCPF11N60.

Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
380MOhm
Terminal Finish
Tin (Sn)
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
11A
Number of Elements
1
Power Dissipation-Max
36W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
36W
Case Connection
ISOLATED
Turn On Delay Time
34 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1490pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Rise Time
98ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
56 ns
Turn-Off Delay Time
119 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Height
9.19mm
Length
10.16mm
Width
4.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FCPF11N60 Description
The FCPF11N60 SUPERFIT MOSFET is the first generation of ON Semiconductor Semiconductor's high voltage super-junction (SJ) MOSFET family to use charge balance technology for remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss while also providing greater switching performance, dv/dt rate, and avalanche energy.

FCPF11N60 Features
650V @Tj = 150°C
Typ. Rds(on)=0.32Ω
Ultra-low gate charge (Typ. Qg=40nC)
Low effective output capacitance (Typ. Coss.eff=95pF)
100% avalanche tested
RoHS Compliant

FCPF11N60 Applications
The switching power applications

FCPF11N60 More Descriptions

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F
Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested

Product Comparison

The three parts on the right have similar specifications to FCPF11N60.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Drain to Source Voltage (Vdss)

Contact Plating

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Subcategory

View Compare
FCPF11N60

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.27g

SILICON

-55°C~150°C TJ

Tube

SuperFET™

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

380MOhm

Tin (Sn)

600V

MOSFET (Metal Oxide)

11A

1

36W Tc

Single

ENHANCEMENT MODE

36W

ISOLATED

34 ns

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

5V @ 250μA

1490pF @ 25V

11A Tc

52nC @ 10V

98ns

10V

±30V

56 ns

119 ns

11A

5V

TO-220AB

30V

600V

9.19mm

10.16mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
FCPF4300N80Z

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

17 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-

2.27g

-

-55°C~150°C TJ

Tube

SuperFET® II

e3

yes

Active

1 (Unlimited)

-

EAR99

4.3Ohm

Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

19.2W Tc

Single

-

-

-

10 ns

N-Channel

-

4.3 Ω @ 800mA, 10V

4.5V @ 160μA

355pF @ 100V

1.6A Tc

8.8nC @ 10V

6.5ns

10V

±20V

16 ns

21 ns

1.6A

-

-

30V

-

-

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

800V

-

-

-

-

FCPF11N60 vs FCPF4300N80Z
FCPF20N60

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 3 days ago)

13 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.27g

SILICON

-55°C~150°C TJ

Tube

SuperFET™

e3

yes

Not For New Designs

1 (Unlimited)

3

EAR99

190MOhm

-

600V

MOSFET (Metal Oxide)

20A

1

39W Tc

Single

ENHANCEMENT MODE

39W

ISOLATED

62 ns

N-Channel

SWITCHING

190m Ω @ 10A, 10V

5V @ 250μA

3080pF @ 25V

20A Tc

98nC @ 10V

140ns

10V

±30V

65 ns

230 ns

20A

5V

TO-220AB

30V

600V

9.19mm

10.16mm

4.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

Tin

60A

690 mJ

-

FCPF11N60 vs FCPF20N60
FCPF380N60

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

12 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

2.27g

SILICON

-55°C~150°C TJ

Tube

SuperFET® II

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Tin (Sn)

-

MOSFET (Metal Oxide)

-

1

31W Tc

Single

ENHANCEMENT MODE

31W

ISOLATED

14 ns

N-Channel

SWITCHING

380m Ω @ 5A, 10V

3.5V @ 250μA

1665pF @ 25V

10.2A Tc

40nC @ 10V

7ns

10V

±20V

6 ns

45 ns

10.2A

-

TO-220AB

20V

650V

9.19mm

10.36mm

4.9mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

600V

-

-

-

FET General Purpose Power

FCPF11N60 vs FCPF380N60

Certification

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FCPF11N60 Specification

Part Number	Manufacturers	Description	Stock	Price
FCPF11N60NT DISTI #	ON Semiconductor	600V N-CHANNEL MOSFET SUPREMOS	1000	1000 $1.835 5000 $1.7
FCPF11N60 DISTI #	ON Semiconductor	N-CH/600V/11A/SUPER FET	997	1 $1.5979 10 $1.407 100 $1.1639 500 $1.0391 1000 $0.9073
FCPF11N60 DISTI #	ON Semiconductor	MOSFET N-CH 600V 11A TO220F RoHS: Compliant	957	1 $2.26 10 $2.043 100 $1.6417 500 $1.27686 1000 $1.05796
FCPF11N60NT DISTI #	ON Semiconductor	MOSFET N-CH 600V 10.8A TO220F RoHS: Compliant	708	1 $4.2 10 $3.752 100 $3.0765 500 $2.49122 1000 $2.10102
FCPF11N60F DISTI #	ON Semiconductor	MOSFET N-CH 600V 11A TO-220F RoHS: Compliant	384	1 $2.42 10 $2.189 100 $1.759 500 $1.3681 1000 $1.13357
FCPF11N60T DISTI #	ON Semiconductor	MOSFET N-CH 600V 11A TO-220F RoHS: Compliant	0	1000 $1.86402
FCPF11N60_G DISTI #	ON Semiconductor	INTEGRATED CIRCUIT RoHS: Compliant	0
FCPF11N60NT DISTI #	ON Semiconductor	600V N-CHANNEL MOSFET SUPREMOS	1000	1000 $1.835
FCPF11N60NT DISTI #	ON Semiconductor	600V N-CHANNEL MOSFET SUPREMOS	1000	1000 $1.731
FCPF11N60 DISTI #	ON Semiconductor	N-CH/600V/11A/SUPER FET	997	8 $1.5979 10 $1.407 100 $1.1639 500 $1.0391
FCPF11N60 DISTI #	ON Semiconductor	Trans MOSFET N-CH 650V 11A 3-Pin TO-220F Tube (Alt RoHS: Compliant	0
FCPF11N60 DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220F Ra RoHS: Compliant	0	1000 $0.7909 2000 $0.7859 4000 $0.7759 6000 $0.7659 10000 $0.7469
FCPF11N60 DISTI #	ON Semiconductor	Trans MOSFET N-CH 650V 11A 3-Pin TO-220F Tube (Alt RoHS: Compliant	0	1 $1.6659 10 $1.4179 25 $1.4139 50 $1.4109 100 $1.1269 500 $0.9889 1000 $0.8229
FCPF11N60T DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220F Ra RoHS: Compliant	0	1000 $1.39 2000 $1.39 4000 $1.39 6000 $1.29 10000 $1.29
FCPF11N60T DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220F Ra RoHS: Compliant	0	1 $1.79 10 $1.59 25 $1.49 50 $1.39 100 $1.39 500 $1.29 1000 $1.29
FCPF11N60F DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220F Ra RoHS: Compliant	0	1 $1.0739 10 $0.9769 25 $0.8949 50 $0.8589 100 $0.8259 500 $0.7959 1000 $0.7669
FCPF11N60F DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220F Ra RoHS: Compliant	0	1000 $0.8479 2000 $0.8419 4000 $0.8309 6000 $0.8209 10000 $0.8009
FCPF11N60NT DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 10.8A 3-Pin(3 Tab) TO-220F RoHS: Compliant	0	1000 $1.69 2000 $1.69 4000 $1.69 6000 $1.69 10000 $1.59
FCPF11N60NT DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 10.8A 3-Pin(3 Tab) TO-220F RoHS: Compliant	0	1 $2.09 10 $1.89 25 $1.79 50 $1.79 100 $1.69 500 $1.59 1000 $1.49
FCPF11N60NT DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 10.8A 3-Pin(3 Tab) TO-220F RoHS: Compliant	0	1000 $1.67992 2000 $1.61531 3000 $1.55548 5000 $1.49993 10000 $1.44821 25000 $1.39993 50000 $1.37698
FCPF11N60 DISTI #	ON Semiconductor	MOSFET Transistor, N Channel, 11 A, 600 V, 0.32 oh	25	1 $1.95 10 $1.65 100 $1.32 500 $1.16 1000 $0.962
FCPF11N60NT DISTI #	ON Semiconductor	MOSFET Transistor, N Channel, 10.8 A, 600 V, 0.255	0	1 $3.96 10 $3.21 100 $2.67 500 $2.41 1000 $2.05 2500 $1.96 10000 $1.85
FCPF11N60 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.3 RoHS: Compliant	2196	1 $1.68 25 $1.56 100 $1.5 500 $1.44 1000 $1.37
FCPF11N60F DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.3 RoHS: Compliant	209	1 $1.81 25 $1.68 100 $1.61 500 $1.55 1000 $1.47
FCPF11N60NT DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 10.8A I(D), 600V, 0 RoHS: Compliant	16493	1 $2.75 25 $2.56 100 $2.45 500 $2.35 1000 $2.24
FCPF11N60T DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.3 RoHS: Compliant	547	1 $3.17 25 $2.94 100 $2.82 500 $2.71 1000 $2.57
FCPF11N60 DISTI #	ON Semiconductor	MOSFET 600V 11A N-CH RoHS: Compliant	0	1 $1.95 10 $1.65 100 $1.32 500 $1.16 1000 $0.962
FCPF11N60NT DISTI #	ON Semiconductor	MOSFET SupreMOS 11A RoHS: Compliant	827	1 $3.62 10 $3.07 100 $2.67 250 $2.53 500 $2.27
FCPF11N60F DISTI #	ON Semiconductor	MOSFET 600V NCH MOSFET RoHS: Compliant	11	1 $2.1 10 $1.78 100 $1.43 500 $1.25 1000 $1.04 2000 $0.96 5000 $0.924
FCPF11N60T DISTI #	ON Semiconductor	MOSFET SUPERFET RoHS: Compliant	973	1 $3.21 10 $2.73 100 $2.37 250 $2.24 500 $2.01
FCPF11N60 DISTI #	ON Semiconductor	Transistor: N-MOSFET, unipolar, 650V, 11A, 36W	763	1 $2.06 5 $1.77 25 $1.42 100 $1.28 500 $1.21
FCPF11N60 DISTI #	ON Semiconductor	MOSFET, N, TO-220F RoHS: Compliant	486	1 $1.72 10 $1.31 100 $1.03 250 $0.967 500 $0.904
FCPF11N60 DISTI #	ON Semiconductor	MOSFET, N, TO-220F RoHS: Compliant	25	1 $3.1 10 $2.63 100 $2.1 500 $1.85 1000 $1.53
FCPF11N60F DISTI #	ON Semiconductor	RoHS: Compliant	0	1 $3.32 10 $2.82 100 $2.27 500 $1.98 1000 $1.65 2000 $1.53 5000 $1.46 10000 $1.41
FCPF11N60 DISTI #	ON Semiconductor	Unclassified	520	5 $2.13 25 $1.72 100 $1.42 500 $1.3
FCPF11N60NT DISTI #	ON Semiconductor	Trans MOSFET N-CH 600V 10.8A 3-Pin(3 Tab) TO-220FP RoHS: Compliant	1000	1000 $3.079
FCPF11N60 DISTI #	Fairchild Semiconductor Corporation	RoHS: Compliant	471	104 $1.94 471 $1.76

FCPF11N~~(6)~~
FCPF11~~(6)~~
FCPF1~~(15)~~
FCPF~~(61)~~
FCP~~(67)~~

Fairchild/ON Semiconductor FCPF11N60

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