Diodes Incorporated DPLS160-7

Name: DPLS160-7
Brand: Diodes Incorporated
SKU: 3585291-DPLS160-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DPLS160-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3585291-DPLS160-7

Description:: TRANS PNP 60V 1A SOT23-3

ECAD Model:

Datasheet:: DPLS160-7

Specifications

Diodes Incorporated DPLS160-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DPLS160-7.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Gain Bandwidth Product
220MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
330mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
220MHz
Collector Emitter Saturation Voltage
-330mV
Max Breakdown Voltage
60V
Frequency - Transition
150MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
-5V
Height
1.1mm
Length
3mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DPLS160-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1mA 5V.The collector emitter saturation voltage is -330mV, which allows for maximum design flexibility.When VCE saturation is 330mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 220MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.

DPLS160-7 Features
the DC current gain for this device is 200 @ 1mA 5V
a collector emitter saturation voltage of -330mV
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz

DPLS160-7 Applications
There are a lot of Diodes Incorporated
DPLS160-7 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DPLS160-7 More Descriptions

DPLS160 Series 60 V 1 A Surface Mount PNP Transistor - SOT-23-3
Low VCE(sat) PNP Transistor SOT-23 | Diodes Inc DPLS160-7
Trans GP BJT PNP 60V 1A 300mW 3-Pin SOT-23 T/R
Trans, Pnp, 60V, 1A, 150Deg C, 0.3W Rohs Compliant: Yes |Diodes Inc. DPLS160-7

Product Comparison

The three parts on the right have similar specifications to DPLS160-7.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Max Operating Temperature

Min Operating Temperature

Polarity

Case Connection

Transistor Application

hFE Min

DC Current Gain-Min (hFE)

Base Part Number

JESD-30 Code

View Compare
DPLS160-7

Diodes Incorporated

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

300mW

DUAL

GULL WING

260

220MHz

40

3

1

Single

300mW

220MHz

PNP

PNP

60V

1A

200 @ 1mA 5V

100nA

330mV @ 100mA, 1A

60V

220MHz

-330mV

60V

150MHz

80V

-5V

1.1mm

3mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
DPLS325E-13

Diodes Incorporated

Surface Mount

-

SOT-223

4

7.994566mg

-

-

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

-

Other Transistors

1W

DUAL

GULL WING

260

100MHz

40

4

1

Single

1W

100MHz

-

-

25V

3A

-

-

-

25V

100MHz

-

25V

-

25V

5V

1.6mm

6.5mm

3.5mm

-

No

ROHS3 Compliant

-

11 Weeks

150°C

-55°C

PNP

COLLECTOR

SWITCHING

300

100

-

-

DPLS160-7 vs DPLS325E-13
DPLS350Y-13

Diodes Incorporated

Surface Mount

Surface Mount

TO-243AA

4

51.993025mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

-

Active

1 (Unlimited)

3

-

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

1W

-

FLAT

260

100MHz

30

-

1

Single

1W

100MHz

PNP

PNP

50V

3A

200 @ 1A 2V

100nA

390mV @ 300mA, 3A

50V

100MHz

-390mV

50V

-

50V

-6V

1.5mm

4.5mm

2.48mm

No SVHC

No

ROHS3 Compliant

Lead Free

19 Weeks

-

-

-

COLLECTOR

-

-

-

DPLS350

R-PSSO-F3

DPLS160-7 vs DPLS350Y-13
DPLS350E-13

Diodes Incorporated

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

-

Other Transistors

1W

DUAL

GULL WING

260

100MHz

40

4

1

Single

1W

100MHz

PNP

PNP

50V

3A

100 @ 2A 2V

100nA ICBO

300mV @ 200mA, 2A

50V

100MHz

-300mV

50V

-

60V

-6V

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

-

15 Weeks

-

-

-

COLLECTOR

SWITCHING

-

-

DPLS350

-

DPLS160-7 vs DPLS350E-13