Diodes Incorporated DPLS350Y-13

Name: DPLS350Y-13
Brand: Diodes Incorporated
SKU: 2464696-DPLS350Y-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DPLS350Y-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2464696-DPLS350Y-13

Description:: TRANS PNP 50V 3A SOT89-3

ECAD Model:

Datasheet:: DPLS350Y-13

Specifications

Diodes Incorporated DPLS350Y-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DPLS350Y-13.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
DPLS350
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
390mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-390mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-6V
Height
1.5mm
Length
4.5mm
Width
2.48mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DPLS350Y-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.With a collector emitter saturation voltage of -390mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 390mV @ 300mA, 3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.

DPLS350Y-13 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of -390mV
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 100MHz

DPLS350Y-13 Applications
There are a lot of Diodes Incorporated
DPLS350Y-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DPLS350Y-13 More Descriptions

Trans GP BJT PNP 50V 3A 2000mW 4-Pin(3 Tab) SOT-89 T/R / TRANS PNP 50V 3A SOT89-3
DPLS350Y Series 50 V 3 A Low VCE(SAT) PNP Surface Mount Transistor - SOT-89-3
Pwr Low Sat Transistor Sot89 T&r 2.5K Rohs Compliant: Yes |Diodes Inc. DPLS350Y-13
PNP TRANSISTOR 50V 3A 1W SOT89

Product Comparison

The three parts on the right have similar specifications to DPLS350Y-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

ECCN Code

Terminal Position

Pin Count

hFE Min

Max Operating Temperature

Min Operating Temperature

Polarity

Transistor Application

DC Current Gain-Min (hFE)

View Compare
DPLS350Y-13

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

TO-243AA

4

51.993025mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

3

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

1W

FLAT

260

100MHz

30

DPLS350

R-PSSO-F3

1

Single

1W

COLLECTOR

100MHz

PNP

PNP

50V

3A

200 @ 1A 2V

100nA

390mV @ 300mA, 3A

50V

100MHz

-390mV

50V

50V

-6V

1.5mm

4.5mm

2.48mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
DPLS160V-7

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

SOT-563, SOT-666

6

3.005049mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

Active

1 (Unlimited)

6

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

300mW

FLAT

260

220MHz

40

DPLS160

-

1

Single

300mW

-

220MHz

PNP

PNP

60V

1A

150 @ 500mA 5V

100nA

330mV @ 100mA, 1A

60V

220MHz

-

60V

80V

5V

600μm

1.6mm

1.2mm

No SVHC

No

ROHS3 Compliant

-

yes

EAR99

DUAL

6

250

-

-

-

-

-

DPLS350Y-13 vs DPLS160V-7
DPLS325E-13

Diodes Incorporated

11 Weeks

Surface Mount

-

SOT-223

4

7.994566mg

-

-

Tape & Reel (TR)

2008

e3

Active

1 (Unlimited)

4

Matte Tin (Sn)

-

Other Transistors

1W

GULL WING

260

100MHz

40

-

-

1

Single

1W

COLLECTOR

100MHz

-

-

25V

3A

-

-

-

25V

100MHz

-

25V

25V

5V

1.6mm

6.5mm

3.5mm

-

No

ROHS3 Compliant

-

yes

EAR99

DUAL

4

300

150°C

-55°C

PNP

SWITCHING

100

DPLS350Y-13 vs DPLS325E-13
DPLS350E-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-261-4, TO-261AA

4

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

Active

1 (Unlimited)

4

Matte Tin (Sn)

-

Other Transistors

1W

GULL WING

260

100MHz

40

DPLS350

-

1

Single

1W

COLLECTOR

100MHz

PNP

PNP

50V

3A

100 @ 2A 2V

100nA ICBO

300mV @ 200mA, 2A

50V

100MHz

-300mV

50V

60V

-6V

1.65mm

6.7mm

3.7mm

No SVHC

No

ROHS3 Compliant

-

yes

EAR99

DUAL

4

-

-

-

-

SWITCHING

-

DPLS350Y-13 vs DPLS350E-13