Diodes Incorporated DMTH8012LPS-13
- Part Number:
- DMTH8012LPS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481928-DMTH8012LPS-13
- Description:
- MOSFET N-CH 80V 9.5A PWRDI5060-8
- Datasheet:
- DMTH8012LPS-13
Diodes Incorporated DMTH8012LPS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMTH8012LPS-13.
- Factory Lead Time22 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max2.6W Ta 136W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs17m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1949pF @ 40V
- Current - Continuous Drain (Id) @ 25°C10A Ta 72A Tc
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Drain to Source Voltage (Vdss)80V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)72A
- RoHS StatusROHS3 Compliant
DMTH8012LPS-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1949pF @ 40V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 72A amps.To operate this transistor, you will need a 80V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMTH8012LPS-13 Features
a continuous drain current (ID) of 72A
a 80V drain to source voltage (Vdss)
DMTH8012LPS-13 Applications
There are a lot of Diodes Incorporated
DMTH8012LPS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1949pF @ 40V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 72A amps.To operate this transistor, you will need a 80V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMTH8012LPS-13 Features
a continuous drain current (ID) of 72A
a 80V drain to source voltage (Vdss)
DMTH8012LPS-13 Applications
There are a lot of Diodes Incorporated
DMTH8012LPS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMTH8012LPS-13 More Descriptions
Trans MOSFET N-CH 80V 10A Automotive 8-Pin PowerDI 5060 T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET N-CH 80V 9.5A PWRDI5060-8
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET N-CH 80V 9.5A PWRDI5060-8
The three parts on the right have similar specifications to DMTH8012LPS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusTransistor Element MaterialSeriesNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Reference StandardDrain Current-Max (Abs) (ID)View Compare
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DMTH8012LPS-1322 WeeksSurface MountSurface Mount8-PowerTDFN8-55°C~175°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED2.6W Ta 136W TcN-Channel17m Ω @ 12A, 10V3V @ 250μA1949pF @ 40V10A Ta 72A Tc34nC @ 10V80V4.5V 10V±20V72AROHS3 Compliant-------------------
-
23 WeeksSurface MountSurface MountTO-252-5, DPak (4 Leads Tab), TO-252AD--55°C~175°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED3.9W Ta 180W TcN-Channel3.2m Ω @ 90A, 10V4V @ 250μA4305pF @ 25V100A Tc68.6nC @ 10V40V10V±20V100AROHS3 CompliantSILICONAutomotive, AEC-Q1012HIGH RELIABILITYSINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING0.0032Ohm160A40V160 mJ--
-
22 WeeksSurface MountSurface Mount8-PowerTDFN8-55°C~175°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED2.6W Ta 138W TcN-Channel2.8m Ω @ 25A, 10V3V @ 250μA4515pF @ 30V22A Ta 100A Tc96.3nC @ 10V60V4.5V 10V±20V100AROHS3 CompliantSILICON-5HIGH RELIABILITYDUALFLATR-PDSO-F51SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING0.0031Ohm120A60V160 mJAEC-Q10122A
-
22 WeeksSurface MountSurface Mount8-PowerTDFN8-55°C~175°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED3.2W Ta 150W TcN-Channel5.5m Ω @ 50A, 10V3V @ 250μA2962pF @ 30V20.6A Ta 100A Tc47.1nC @ 10V60V4.5V 10V±20V100AROHS3 Compliant------------------
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