Diodes Incorporated DMT6016LSS-13
- Part Number:
- DMT6016LSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2480886-DMT6016LSS-13
- Description:
- MOSFET N-CH 60V 9.2A 8-SOIC
- Datasheet:
- DMT6016LSS-13
Diodes Incorporated DMT6016LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMT6016LSS-13.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time3.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs18m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds864pF @ 30V
- Current - Continuous Drain (Id) @ 25°C9.2A Ta
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time5.2ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)9.2A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)7.5A
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)60A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMT6016LSS-13 Overview
A device's maximum input capacitance is 864pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 7.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 13 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMT6016LSS-13 Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 60A.
DMT6016LSS-13 Applications
There are a lot of Diodes Incorporated
DMT6016LSS-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 864pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 7.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 13 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.4 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMT6016LSS-13 Features
a continuous drain current (ID) of 9.2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 60A.
DMT6016LSS-13 Applications
There are a lot of Diodes Incorporated
DMT6016LSS-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMT6016LSS-13 More Descriptions
DMT6016 Series 60 V 9.2 A 18 mOhm N-Channel Enhancement Mode Mosfet - SOIC-8
Transistor, 60V, N-channel, enhancement mode MOSFET, 9.2A, MSL1, SO-8 | Diodes Inc DMT6016LSS-13
MOSFET, N-CH, 9.2A, 60V, SOIC-8; Transis; MOSFET, N-CH, 9.2A, 60V, SOIC-8; Transistor Polarity: N Channel; Drain Source Voltage Vds: 60V; Continuous Drain Current Id: 9.2A; On Resistance Rds(on): 0.018ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
Transistor, 60V, N-channel, enhancement mode MOSFET, 9.2A, MSL1, SO-8 | Diodes Inc DMT6016LSS-13
MOSFET, N-CH, 9.2A, 60V, SOIC-8; Transis; MOSFET, N-CH, 9.2A, 60V, SOIC-8; Transistor Polarity: N Channel; Drain Source Voltage Vds: 60V; Continuous Drain Current Id: 9.2A; On Resistance Rds(on): 0.018ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
The three parts on the right have similar specifications to DMT6016LSS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusLead FreePbfree CodeDrain to Source Voltage (Vdss)Reach Compliance CodeCapacitanceView Compare
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DMT6016LSS-1323 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)8EAR99Matte Tin (Sn)MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED111.5W TaSingleENHANCEMENT MODE3.4 nsN-ChannelSWITCHING18m Ω @ 10A, 10V2.5V @ 250μA864pF @ 30V9.2A Ta17nC @ 10V5.2ns4.5V 10V±20V7 ns13 ns9.2A20V7.5A60V60AROHS3 CompliantLead Free-----
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23 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)-EAR99Matte Tin (Sn)MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED--1.3W Ta---N-Channel-6m Ω @ 20A, 10V3V @ 250μA2962pF @ 30V13.5A Ta47.1nC @ 10V-4.5V 10V±20V--13.5A----ROHS3 Compliant-yes60V--
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19 WeeksThrough HoleThrough HoleTO-220-3----55°C~150°C TJTube2016e3Active1 (Unlimited)-EAR99Matte Tin (Sn)MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED--2.3W Ta 113W Tc---N-Channel-3.65m Ω @ 100A, 10V4V @ 250μA4556pF @ 30V100A Tc95.4nC @ 10V-10V±20V--100A----ROHS3 Compliant-yes60Vnot_compliant-
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23 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mg--55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)-EAR99Matte Tin (Sn)MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED-12.2W Ta 41W TcSingle-7 nsN-Channel-7.5m Ω @ 20A, 10V2V @ 250μA2713pF @ 30V13A Ta 60A Tc50.4nC @ 10V4.4ns4.5V 10V±12V7 ns24.4 ns60A12V---ROHS3 Compliant--60V-2.713nF
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