Diodes Incorporated DMP2225L-7
- Part Number:
- DMP2225L-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070459-DMP2225L-7
- Description:
- MOSFET P-CH 20V 2.6A SOT23-3
- Datasheet:
- DMP2225L
Diodes Incorporated DMP2225L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2225L-7.
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.08W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.08W
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs110m Ω @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id1.25V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 10V
- Current - Continuous Drain (Id) @ 25°C2.6A Ta
- Gate Charge (Qg) (Max) @ Vgs5.3nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Continuous Drain Current (ID)2.6A
- Gate to Source Voltage (Vgs)12V
- DS Breakdown Voltage-Min20V
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMP2225L-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 250pF @ 10V.This device has a continuous drain current (ID) of [2.6A], which is its maximum continuous current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
DMP2225L-7 Features
a continuous drain current (ID) of 2.6A
a 20V drain to source voltage (Vdss)
DMP2225L-7 Applications
There are a lot of Diodes Incorporated
DMP2225L-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 250pF @ 10V.This device has a continuous drain current (ID) of [2.6A], which is its maximum continuous current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
DMP2225L-7 Features
a continuous drain current (ID) of 2.6A
a 20V drain to source voltage (Vdss)
DMP2225L-7 Applications
There are a lot of Diodes Incorporated
DMP2225L-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMP2225L-7 More Descriptions
P-Channel 20 V 110 mO 5.3 nC SMT Enhancement Mode Mosfet - SOT-23
Trans MOSFET P-CH 20V 2.6A Automotive 3-Pin SOT-23 T/R
P-CH MOS-FET 2,6A 20V SOT23 RoHSconf
Trans MOSFET P-CH 20V 2.6A Automotive 3-Pin SOT-23 T/R
P-CH MOS-FET 2,6A 20V SOT23 RoHSconf
The three parts on the right have similar specifications to DMP2225L-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFeedback Cap-Max (Crss)JESD-30 CodeLead FreeSeriesView Compare
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DMP2225L-76 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1999e3yesObsolete1 (Unlimited)3EAR99MATTE TINHIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260403111.08W TaSingleENHANCEMENT MODE1.08WP-ChannelSWITCHING110m Ω @ 2.6A, 4.5V1.25V @ 250μA250pF @ 10V2.6A Ta5.3nC @ 4.5V20V2.5V 4.5V±12V2.6A12V20V1mm2.9mm1.3mmNo SVHCNoROHS3 Compliant-------------
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19 WeeksSurface MountSurface Mount3-XFDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2011e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY, LOW THRESHOLDOther TransistorsMOSFET (Metal Oxide)BOTTOMNO LEAD26040311350mW TaSingleENHANCEMENT MODE-P-ChannelSWITCHING5 Ω @ 100mA, 4.5V1V @ 250μA175pF @ 15V200mA Ta-20V1.2V 4.5V±10V200mA10V------ROHS3 CompliantDRAIN7.7 ns19.3ns31.5 ns25.9 ns0.2A5.5Ohm-20V20 pF---
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19 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)DUALNO LEAD26040-112.4W Ta 41W TcSingleENHANCEMENT MODE-P-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc72nC @ 4.5V20V1.5V 4.5V±8V54A8V-850μm3.35mm3.35mmNo SVHC-ROHS3 CompliantDRAIN22 ns33ns124 ns291 ns---20V-S-PDSO-N5Lead Free-
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---780mW Ta---P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta7.8nC @ 10V20V2.5V 4.5V±12V3.1A-------ROHS3 Compliant-----------Automotive, AEC-Q101
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