DMP2225L-7

Diodes Incorporated DMP2225L-7

Part Number:
DMP2225L-7
Manufacturer:
Diodes Incorporated
Ventron No:
3070459-DMP2225L-7
Description:
MOSFET P-CH 20V 2.6A SOT23-3
ECAD Model:
Datasheet:
DMP2225L

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Comments
Specifications
Diodes Incorporated DMP2225L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2225L-7.
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1999
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.08W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.08W
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    110m Ω @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id
    1.25V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    250pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    2.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.3nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Continuous Drain Current (ID)
    2.6A
  • Gate to Source Voltage (Vgs)
    12V
  • DS Breakdown Voltage-Min
    20V
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMP2225L-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 250pF @ 10V.This device has a continuous drain current (ID) of [2.6A], which is its maximum continuous current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).

DMP2225L-7 Features
a continuous drain current (ID) of 2.6A
a 20V drain to source voltage (Vdss)


DMP2225L-7 Applications
There are a lot of Diodes Incorporated
DMP2225L-7 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMP2225L-7 More Descriptions
P-Channel 20 V 110 mO 5.3 nC SMT Enhancement Mode Mosfet - SOT-23
Trans MOSFET P-CH 20V 2.6A Automotive 3-Pin SOT-23 T/R
P-CH MOS-FET 2,6A 20V SOT23 RoHSconf
Product Comparison
The three parts on the right have similar specifications to DMP2225L-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Case Connection
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    JESD-30 Code
    Lead Free
    Series
    View Compare
  • DMP2225L-7
    DMP2225L-7
    6 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    1999
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    1.08W Ta
    Single
    ENHANCEMENT MODE
    1.08W
    P-Channel
    SWITCHING
    110m Ω @ 2.6A, 4.5V
    1.25V @ 250μA
    250pF @ 10V
    2.6A Ta
    5.3nC @ 4.5V
    20V
    2.5V 4.5V
    ±12V
    2.6A
    12V
    20V
    1mm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP210DUFB4-7B
    19 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY, LOW THRESHOLD
    Other Transistors
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    40
    3
    1
    1
    350mW Ta
    Single
    ENHANCEMENT MODE
    -
    P-Channel
    SWITCHING
    5 Ω @ 100mA, 4.5V
    1V @ 250μA
    175pF @ 15V
    200mA Ta
    -
    20V
    1.2V 4.5V
    ±10V
    200mA
    10V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    DRAIN
    7.7 ns
    19.3ns
    31.5 ns
    25.9 ns
    0.2A
    5.5Ohm
    -20V
    20 pF
    -
    -
    -
  • DMP2008UFG-7
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    40
    -
    1
    1
    2.4W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    -
    P-Channel
    SWITCHING
    8m Ω @ 12A, 4.5V
    1V @ 250μA
    6909pF @ 10V
    14A Ta 54A Tc
    72nC @ 4.5V
    20V
    1.5V 4.5V
    ±8V
    54A
    8V
    -
    850μm
    3.35mm
    3.35mm
    No SVHC
    -
    ROHS3 Compliant
    DRAIN
    22 ns
    33ns
    124 ns
    291 ns
    -
    -
    -20V
    -
    S-PDSO-N5
    Lead Free
    -
  • DMP2170U-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    780mW Ta
    -
    -
    -
    P-Channel
    -
    90m Ω @ 3.5A, 4.5V
    1.25V @ 250μA
    303pF @ 10V
    3.1A Ta
    7.8nC @ 10V
    20V
    2.5V 4.5V
    ±12V
    3.1A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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