DMP21D0UT-7

Diodes Incorporated DMP21D0UT-7

Part Number:
DMP21D0UT-7
Manufacturer:
Diodes Incorporated
Ventron No:
2848736-DMP21D0UT-7
Description:
MOSFET P-CH 20V 0.59A SOT523
ECAD Model:
Datasheet:
DMP21D0UT-7

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Specifications
Diodes Incorporated DMP21D0UT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP21D0UT-7.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-523
  • Number of Pins
    3
  • Weight
    2.012816mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    240mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    7.1 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    495m Ω @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    80pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    590mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.54nC @ 8V
  • Rise Time
    8ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    18.5 ns
  • Turn-Off Delay Time
    31.7 ns
  • Continuous Drain Current (ID)
    650mA
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    0.59A
  • Drain-source On Resistance-Max
    0.495Ohm
  • DS Breakdown Voltage-Min
    20V
  • Height
    800μm
  • Length
    1.7mm
  • Width
    850μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMP21D0UT-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 80pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 650mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.59A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 31.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

DMP21D0UT-7 Features
a continuous drain current (ID) of 650mA
the turn-off delay time is 31.7 ns
a 20V drain to source voltage (Vdss)


DMP21D0UT-7 Applications
There are a lot of Diodes Incorporated
DMP21D0UT-7 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMP21D0UT-7 More Descriptions
P-Channel 20 V 495 mOhm 1.54 nC Surface Mount Enhancement Mode Mosfet - SOT-523
Trans MOSFET P-CH 20V 0.65A Automotive 3-Pin SOT-523 T/R
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 495m Ω @ 400mA, 4.5V 590mA Ta -55°C~150°C TJ MOSFET P-CH 20V 0.59A SOT523
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:650Ma; On Resistance Rds(On):0.495Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: No
Product Comparison
The three parts on the right have similar specifications to DMP21D0UT-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Qualification Status
    Power Dissipation
    Polarity/Channel Type
    Threshold Voltage
    Dual Supply Voltage
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Supplier Device Package
    Series
    View Compare
  • DMP21D0UT-7
    DMP21D0UT-7
    17 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    240mW Ta
    Single
    ENHANCEMENT MODE
    7.1 ns
    P-Channel
    SWITCHING
    495m Ω @ 400mA, 4.5V
    700mV @ 250μA
    80pF @ 10V
    590mA Ta
    1.54nC @ 8V
    8ns
    20V
    1.8V 4.5V
    ±8V
    18.5 ns
    31.7 ns
    650mA
    8V
    0.59A
    0.495Ohm
    20V
    800μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP2012SN-7
    -
    Surface Mount
    -
    SC
    3
    7.994566mg
    -
    -
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    -
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    -
    Single
    ENHANCEMENT MODE
    5 ns
    -
    SWITCHING
    -
    -
    -
    -
    -
    20ns
    -20V
    -
    -
    20 ns
    55 ns
    -700mA
    12V
    0.7A
    -
    -
    1.3mm
    3.1mm
    1.7mm
    No SVHC
    -
    ROHS3 Compliant
    -
    SMD/SMT
    150°C
    -65°C
    500mW
    Not Qualified
    500mW
    P-CHANNEL
    -1.2V
    -20V
    180pF
    METAL-OXIDE SEMICONDUCTOR
    300mOhm
    300 mΩ
    -1.2 V
    -
    -
  • DMP2007UFG-13
    17 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    2.3W Ta
    -
    -
    -
    P-Channel
    -
    5.5mOhm @ 15A, 10V
    1.3V @ 250μA
    4621pF @ 10V
    18A Ta 40A Tc
    85nC @ 10V
    -
    20V
    2.5V 10V
    ±12V
    -
    -
    40A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    150°C
    -55°C
    -
    -
    -
    -
    -
    -
    4.621nF
    -
    -
    5.5 mΩ
    -
    PowerDI3333-8
    -
  • DMP2170U-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    780mW Ta
    -
    -
    -
    P-Channel
    -
    90m Ω @ 3.5A, 4.5V
    1.25V @ 250μA
    303pF @ 10V
    3.1A Ta
    7.8nC @ 10V
    -
    20V
    2.5V 4.5V
    ±12V
    -
    -
    3.1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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