Diodes Incorporated DMP21D0UT-7
- Part Number:
- DMP21D0UT-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848736-DMP21D0UT-7
- Description:
- MOSFET P-CH 20V 0.59A SOT523
- Datasheet:
- DMP21D0UT-7
Diodes Incorporated DMP21D0UT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP21D0UT-7.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max240mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time7.1 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs495m Ω @ 400mA, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds80pF @ 10V
- Current - Continuous Drain (Id) @ 25°C590mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.54nC @ 8V
- Rise Time8ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)18.5 ns
- Turn-Off Delay Time31.7 ns
- Continuous Drain Current (ID)650mA
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)0.59A
- Drain-source On Resistance-Max0.495Ohm
- DS Breakdown Voltage-Min20V
- Height800μm
- Length1.7mm
- Width850μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP21D0UT-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 80pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 650mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.59A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 31.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
DMP21D0UT-7 Features
a continuous drain current (ID) of 650mA
the turn-off delay time is 31.7 ns
a 20V drain to source voltage (Vdss)
DMP21D0UT-7 Applications
There are a lot of Diodes Incorporated
DMP21D0UT-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 80pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 650mA. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.59A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 31.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
DMP21D0UT-7 Features
a continuous drain current (ID) of 650mA
the turn-off delay time is 31.7 ns
a 20V drain to source voltage (Vdss)
DMP21D0UT-7 Applications
There are a lot of Diodes Incorporated
DMP21D0UT-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMP21D0UT-7 More Descriptions
P-Channel 20 V 495 mOhm 1.54 nC Surface Mount Enhancement Mode Mosfet - SOT-523
Trans MOSFET P-CH 20V 0.65A Automotive 3-Pin SOT-523 T/R
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 495m Ω @ 400mA, 4.5V 590mA Ta -55°C~150°C TJ MOSFET P-CH 20V 0.59A SOT523
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:650Ma; On Resistance Rds(On):0.495Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: No
Trans MOSFET P-CH 20V 0.65A Automotive 3-Pin SOT-523 T/R
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 495m Ω @ 400mA, 4.5V 590mA Ta -55°C~150°C TJ MOSFET P-CH 20V 0.59A SOT523
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:650Ma; On Resistance Rds(On):0.495Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: No
The three parts on the right have similar specifications to DMP21D0UT-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminationMax Operating TemperatureMin Operating TemperatureMax Power DissipationQualification StatusPower DissipationPolarity/Channel TypeThreshold VoltageDual Supply VoltageInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxNominal VgsSupplier Device PackageSeriesView Compare
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DMP21D0UT-717 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26040311240mW TaSingleENHANCEMENT MODE7.1 nsP-ChannelSWITCHING495m Ω @ 400mA, 4.5V700mV @ 250μA80pF @ 10V590mA Ta1.54nC @ 8V8ns20V1.8V 4.5V±8V18.5 ns31.7 ns650mA8V0.59A0.495Ohm20V800μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free-----------------
-
-Surface Mount-SC37.994566mg--Tape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther Transistors-DUALGULL WING26040311-SingleENHANCEMENT MODE5 ns-SWITCHING-----20ns-20V--20 ns55 ns-700mA12V0.7A--1.3mm3.1mm1.7mmNo SVHC-ROHS3 Compliant-SMD/SMT150°C-65°C500mWNot Qualified500mWP-CHANNEL-1.2V-20V180pFMETAL-OXIDE SEMICONDUCTOR300mOhm300 mΩ-1.2 V--
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17 WeeksSurface MountSurface Mount8-PowerVDFN8---55°C~150°C TJTape & Reel (TR)2007--Active1 (Unlimited)-----MOSFET (Metal Oxide)-------2.3W Ta---P-Channel-5.5mOhm @ 15A, 10V1.3V @ 250μA4621pF @ 10V18A Ta 40A Tc85nC @ 10V-20V2.5V 10V±12V--40A---------ROHS3 Compliant--150°C-55°C------4.621nF--5.5 mΩ-PowerDI3333-8-
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---780mW Ta---P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta7.8nC @ 10V-20V2.5V 4.5V±12V--3.1A---------ROHS3 Compliant----------------Automotive, AEC-Q101
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