DMP2160U-7

Diodes Incorporated DMP2160U-7

Part Number:
DMP2160U-7
Manufacturer:
Diodes Incorporated
Ventron No:
3554165-DMP2160U-7
Description:
MOSFET P-CH 20V 3.2A SOT-23
ECAD Model:
Datasheet:
DMP2160U

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Specifications
Diodes Incorporated DMP2160U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2160U-7.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    80mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.4W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.4W
  • Turn On Delay Time
    12.5 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    627pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.2A Ta
  • Rise Time
    10.3ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    10.3 ns
  • Turn-Off Delay Time
    46.5 ns
  • Continuous Drain Current (ID)
    3.2A
  • Threshold Voltage
    -600mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    -20V
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMP2160U-7 Overview
A device's maximal input capacitance is 627pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 46.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -600mV threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

DMP2160U-7 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 46.5 ns
a threshold voltage of -600mV
a 20V drain to source voltage (Vdss)


DMP2160U-7 Applications
There are a lot of Diodes Incorporated
DMP2160U-7 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMP2160U-7 More Descriptions
DMP2160U Series 20 V 80 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET P-CH 20V 3.3A Automotive 3-Pin SOT-23 T/R
MOSFET P-Channel 20V 3.3A SOT23 | Diodes Inc DMP2160U-7
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV;
Product Comparison
The three parts on the right have similar specifications to DMP2160U-7.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Max Power Dissipation
    Qualification Status
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Factory Lead Time
    Case Connection
    Drain-source On Resistance-Max
    Feedback Cap-Max (Crss)
    JESD-30 Code
    Gate Charge (Qg) (Max) @ Vgs
    View Compare
  • DMP2160U-7
    DMP2160U-7
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    80mOhm
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    1.4W Ta
    Single
    ENHANCEMENT MODE
    1.4W
    12.5 ns
    P-Channel
    SWITCHING
    80m Ω @ 1.5A, 4.5V
    900mV @ 250μA
    627pF @ 10V
    3.2A Ta
    10.3ns
    20V
    1.8V 4.5V
    ±12V
    10.3 ns
    46.5 ns
    3.2A
    -600mV
    12V
    -20V
    1mm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP2012SN-7
    Surface Mount
    -
    SC
    3
    7.994566mg
    -
    -
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    -
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    -
    Single
    ENHANCEMENT MODE
    500mW
    5 ns
    -
    SWITCHING
    -
    -
    -
    -
    20ns
    -20V
    -
    -
    20 ns
    55 ns
    -700mA
    -1.2V
    12V
    -
    1.3mm
    3.1mm
    1.7mm
    No SVHC
    -
    ROHS3 Compliant
    -
    SMD/SMT
    150°C
    -65°C
    HIGH RELIABILITY
    500mW
    Not Qualified
    P-CHANNEL
    0.7A
    -20V
    180pF
    METAL-OXIDE SEMICONDUCTOR
    300mOhm
    300 mΩ
    -1.2 V
    -
    -
    -
    -
    -
    -
  • DMP210DUFB4-7B
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    40
    3
    1
    1
    350mW Ta
    Single
    ENHANCEMENT MODE
    -
    7.7 ns
    P-Channel
    SWITCHING
    5 Ω @ 100mA, 4.5V
    1V @ 250μA
    175pF @ 15V
    200mA Ta
    19.3ns
    20V
    1.2V 4.5V
    ±10V
    31.5 ns
    25.9 ns
    200mA
    -
    10V
    -20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    HIGH RELIABILITY, LOW THRESHOLD
    -
    -
    -
    0.2A
    -
    -
    -
    -
    -
    -
    19 Weeks
    DRAIN
    5.5Ohm
    20 pF
    -
    -
  • DMP2008UFG-7
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    40
    -
    1
    1
    2.4W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    -
    22 ns
    P-Channel
    SWITCHING
    8m Ω @ 12A, 4.5V
    1V @ 250μA
    6909pF @ 10V
    14A Ta 54A Tc
    33ns
    20V
    1.5V 4.5V
    ±8V
    124 ns
    291 ns
    54A
    -
    8V
    -20V
    850μm
    3.35mm
    3.35mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    19 Weeks
    DRAIN
    -
    -
    S-PDSO-N5
    72nC @ 4.5V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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