Diodes Incorporated DMP2160U-7
- Part Number:
- DMP2160U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3554165-DMP2160U-7
- Description:
- MOSFET P-CH 20V 3.2A SOT-23
- Datasheet:
- DMP2160U
Diodes Incorporated DMP2160U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2160U-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance80mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time12.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs80m Ω @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds627pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.2A Ta
- Rise Time10.3ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)10.3 ns
- Turn-Off Delay Time46.5 ns
- Continuous Drain Current (ID)3.2A
- Threshold Voltage-600mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage-20V
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP2160U-7 Overview
A device's maximal input capacitance is 627pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 46.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -600mV threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMP2160U-7 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 46.5 ns
a threshold voltage of -600mV
a 20V drain to source voltage (Vdss)
DMP2160U-7 Applications
There are a lot of Diodes Incorporated
DMP2160U-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 627pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 46.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -600mV threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMP2160U-7 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 46.5 ns
a threshold voltage of -600mV
a 20V drain to source voltage (Vdss)
DMP2160U-7 Applications
There are a lot of Diodes Incorporated
DMP2160U-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMP2160U-7 More Descriptions
DMP2160U Series 20 V 80 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET P-CH 20V 3.3A Automotive 3-Pin SOT-23 T/R
MOSFET P-Channel 20V 3.3A SOT23 | Diodes Inc DMP2160U-7
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV;
Trans MOSFET P-CH 20V 3.3A Automotive 3-Pin SOT-23 T/R
MOSFET P-Channel 20V 3.3A SOT23 | Diodes Inc DMP2160U-7
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV;
The three parts on the right have similar specifications to DMP2160U-7.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminationMax Operating TemperatureMin Operating TemperatureAdditional FeatureMax Power DissipationQualification StatusPolarity/Channel TypeDrain Current-Max (Abs) (ID)Dual Supply VoltageInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxNominal VgsFactory Lead TimeCase ConnectionDrain-source On Resistance-MaxFeedback Cap-Max (Crss)JESD-30 CodeGate Charge (Qg) (Max) @ VgsView Compare
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DMP2160U-7Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesObsolete1 (Unlimited)3EAR9980mOhmMatte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260403111.4W TaSingleENHANCEMENT MODE1.4W12.5 nsP-ChannelSWITCHING80m Ω @ 1.5A, 4.5V900mV @ 250μA627pF @ 10V3.2A Ta10.3ns20V1.8V 4.5V±12V10.3 ns46.5 ns3.2A-600mV12V-20V1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------------------
-
Surface Mount-SC37.994566mg--Tape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99-Matte Tin (Sn)Other Transistors-DUALGULL WING26040311-SingleENHANCEMENT MODE500mW5 ns-SWITCHING----20ns-20V--20 ns55 ns-700mA-1.2V12V-1.3mm3.1mm1.7mmNo SVHC-ROHS3 Compliant-SMD/SMT150°C-65°CHIGH RELIABILITY500mWNot QualifiedP-CHANNEL0.7A-20V180pFMETAL-OXIDE SEMICONDUCTOR300mOhm300 mΩ-1.2 V------
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Surface MountSurface Mount3-XFDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2011e4yesActive1 (Unlimited)3EAR99-Nickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)BOTTOMNO LEAD26040311350mW TaSingleENHANCEMENT MODE-7.7 nsP-ChannelSWITCHING5 Ω @ 100mA, 4.5V1V @ 250μA175pF @ 15V200mA Ta19.3ns20V1.2V 4.5V±10V31.5 ns25.9 ns200mA-10V-20V-----ROHS3 Compliant----HIGH RELIABILITY, LOW THRESHOLD---0.2A------19 WeeksDRAIN5.5Ohm20 pF--
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Surface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALNO LEAD26040-112.4W Ta 41W TcSingleENHANCEMENT MODE-22 nsP-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc33ns20V1.5V 4.5V±8V124 ns291 ns54A-8V-20V850μm3.35mm3.35mmNo SVHC-ROHS3 CompliantLead Free--------------19 WeeksDRAIN--S-PDSO-N572nC @ 4.5V
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