Diodes Incorporated DMP2130L-7
- Part Number:
- DMP2130L-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479711-DMP2130L-7
- Description:
- MOSFET P-CH 20V 3A SOT23-3
- Datasheet:
- DMP2130L-7
Diodes Incorporated DMP2130L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2130L-7.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time12 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs75m Ω @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id1.25V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds443pF @ 16V
- Current - Continuous Drain (Id) @ 25°C3A Ta
- Gate Charge (Qg) (Max) @ Vgs7.3nC @ 4.5V
- Rise Time20ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)3A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)3A
- Drain-source On Resistance-Max0.075Ohm
- Drain to Source Breakdown Voltage-20V
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMP2130L-7 Overview
The maximum input capacitance of this device is 443pF @ 16V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
DMP2130L-7 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 38 ns
a 20V drain to source voltage (Vdss)
DMP2130L-7 Applications
There are a lot of Diodes Incorporated
DMP2130L-7 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 443pF @ 16V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.As shown in the table below, the drain current of this device is 3A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
DMP2130L-7 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 38 ns
a 20V drain to source voltage (Vdss)
DMP2130L-7 Applications
There are a lot of Diodes Incorporated
DMP2130L-7 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMP2130L-7 More Descriptions
P-Channel 20 V 75 mOhm 7.3 nC Surface Mount Enhancement Mode Mosfet - SOT-23
Trans MOSFET P-CH 20V 3A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 3A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMP2130L-7
Trans MOSFET P-CH 20V 3A Automotive 3-Pin SOT-23 T/R
Mosfet, P-Ch, 20V, 3A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMP2130L-7
The three parts on the right have similar specifications to DMP2130L-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusJESD-30 CodeCase ConnectionLead FreeSeriesConfigurationDS Breakdown Voltage-MinView Compare
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DMP2130L-716 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260403111.4W TaSingleENHANCEMENT MODE1.4W12 nsP-ChannelSWITCHING75m Ω @ 3.5A, 4.5V1.25V @ 250μA443pF @ 16V3A Ta7.3nC @ 4.5V20ns20V2.5V 4.5V±12V20 ns38 ns3A12V3A0.075Ohm-20V1mm2.9mm1.3mmNo SVHCNoROHS3 Compliant-------
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19 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)DUALNO LEAD26040-112.4W Ta 41W TcSingleENHANCEMENT MODE-22 nsP-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc72nC @ 4.5V33ns20V1.5V 4.5V±8V124 ns291 ns54A8V---20V850μm3.35mm3.35mmNo SVHC-ROHS3 CompliantS-PDSO-N5DRAINLead Free---
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---780mW Ta----P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta7.8nC @ 10V-20V2.5V 4.5V±12V--3.1A---------ROHS3 Compliant---Automotive, AEC-Q101--
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22 WeeksSurface MountSurface Mount6-UDFN Exposed Pad--SILICON-55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)--MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIED-1-730mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING27m Ω @ 7A, 4.5V1V @ 250μA1837pF @ 15V7.6A Ta27nC @ 4.5V-20V1.5V 4.5V±8V--7.6A--0.027Ohm------ROHS3 CompliantS-PDSO-N6DRAIN--SINGLE WITH BUILT-IN DIODE20V
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