Diodes Incorporated DMP2100U-7
- Part Number:
- DMP2100U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848754-DMP2100U-7
- Description:
- MOSFET P CH 20V 4.3A SOT23
- Datasheet:
- DMP2100U
Diodes Incorporated DMP2100U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2100U-7.
- Factory Lead Time5 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max800mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.3W
- Turn On Delay Time80 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs38m Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds216pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.3A Ta
- Gate Charge (Qg) (Max) @ Vgs9.1nC @ 4.5V
- Rise Time155ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 10V
- Vgs (Max)±10V
- Fall Time (Typ)423 ns
- Turn-Off Delay Time688 ns
- Continuous Drain Current (ID)4.3A
- Threshold Voltage-1.4V
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage-20V
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP2100U-7 Overview
A device's maximal input capacitance is 216pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 688 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 80 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1.4V threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 10V).
DMP2100U-7 Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 688 ns
a threshold voltage of -1.4V
a 20V drain to source voltage (Vdss)
DMP2100U-7 Applications
There are a lot of Diodes Incorporated
DMP2100U-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 216pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 688 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 80 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -1.4V threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 10V).
DMP2100U-7 Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 688 ns
a threshold voltage of -1.4V
a 20V drain to source voltage (Vdss)
DMP2100U-7 Applications
There are a lot of Diodes Incorporated
DMP2100U-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMP2100U-7 More Descriptions
P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMP2100U-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeaturePin CountCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxFeedback Cap-Max (Crss)JESD-30 CodeConfigurationDS Breakdown Voltage-MinView Compare
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DMP2100U-75 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2604011800mW TaSingleENHANCEMENT MODE1.3W80 nsP-ChannelSWITCHING38m Ω @ 3.5A, 10V1.4V @ 250μA216pF @ 15V4.3A Ta9.1nC @ 4.5V155ns20V1.8V 10V±10V423 ns688 ns4.3A-1.4V10V-20V1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free----------
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19 WeeksSurface MountSurface Mount3-XFDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2011e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)BOTTOMNO LEAD2604011350mW TaSingleENHANCEMENT MODE-7.7 nsP-ChannelSWITCHING5 Ω @ 100mA, 4.5V1V @ 250μA175pF @ 15V200mA Ta-19.3ns20V1.2V 4.5V±10V31.5 ns25.9 ns200mA-10V-20V-----ROHS3 Compliant-HIGH RELIABILITY, LOW THRESHOLD3DRAIN0.2A5.5Ohm20 pF---
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19 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALNO LEAD26040112.4W Ta 41W TcSingleENHANCEMENT MODE-22 nsP-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc72nC @ 4.5V33ns20V1.5V 4.5V±8V124 ns291 ns54A-8V-20V850μm3.35mm3.35mmNo SVHC-ROHS3 CompliantLead Free--DRAIN---S-PDSO-N5--
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22 WeeksSurface MountSurface Mount6-UDFN Exposed Pad--SILICON-55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIED1-730mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING27m Ω @ 7A, 4.5V1V @ 250μA1837pF @ 15V7.6A Ta27nC @ 4.5V-20V1.5V 4.5V±8V--7.6A--------ROHS3 Compliant---DRAIN-0.027Ohm-S-PDSO-N6SINGLE WITH BUILT-IN DIODE20V
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