DMP2047UCB4-7

Diodes Incorporated DMP2047UCB4-7

Part Number:
DMP2047UCB4-7
Manufacturer:
Diodes Incorporated
Ventron No:
2480726-DMP2047UCB4-7
Description:
MOSFET P-CH 20V 4.1A 4UWLB
ECAD Model:
Datasheet:
DMP2047UCB4-7

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Specifications
Diodes Incorporated DMP2047UCB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2047UCB4-7.
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-UFBGA, WLBGA
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    BALL
  • Reference Standard
    AEC-Q101
  • Number of Elements
    1
  • Power Dissipation-Max
    1W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    7.9 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    47m Ω @ 1A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    218pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    4.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.3nC @ 4.5V
  • Rise Time
    10.7ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Fall Time (Typ)
    38 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    4.1A
  • Gate to Source Voltage (Vgs)
    -6V
  • Drain Current-Max (Abs) (ID)
    3.6A
  • Drain-source On Resistance-Max
    0.06Ohm
  • DS Breakdown Voltage-Min
    20V
  • Height
    380μm
  • Length
    1.05mm
  • Width
    1.05mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMP2047UCB4-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 218pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.1A amps.A device can conduct a maximum continuous current of [3.6A] according to its drain current.It is [48 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -6V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

DMP2047UCB4-7 Features
a continuous drain current (ID) of 4.1A
the turn-off delay time is 48 ns
a 20V drain to source voltage (Vdss)


DMP2047UCB4-7 Applications
There are a lot of Diodes Incorporated
DMP2047UCB4-7 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP2047UCB4-7 More Descriptions
Trans MOSFET P-CH 20V 4.1A 4-Pin WLP T/R
MOSFET, P-CH, 20V, 4.1A, U-WLB1010;
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet Bvdss: 8V~24V U-Wlb1010-4 T&r 3K
Product Comparison
The three parts on the right have similar specifications to DMP2047UCB4-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Reference Standard
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Vgs (Max)
    Input Capacitance
    Rds On Max
    Weight
    Pbfree Code
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Channels
    Case Connection
    Drain to Source Breakdown Voltage
    REACH SVHC
    Lead Free
    Configuration
    View Compare
  • DMP2047UCB4-7
    DMP2047UCB4-7
    23 Weeks
    Surface Mount
    Surface Mount
    4-UFBGA, WLBGA
    4
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e1
    Active
    1 (Unlimited)
    4
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    AEC-Q101
    1
    1W Ta
    Single
    ENHANCEMENT MODE
    7.9 ns
    P-Channel
    SWITCHING
    47m Ω @ 1A, 4.5V
    1.2V @ 250μA
    218pF @ 10V
    4.1A Ta
    2.3nC @ 4.5V
    10.7ns
    20V
    2.5V 4.5V
    38 ns
    48 ns
    4.1A
    -6V
    3.6A
    0.06Ohm
    20V
    380μm
    1.05mm
    1.05mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP2007UFG-13
    17 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.3W Ta
    -
    -
    -
    P-Channel
    -
    5.5mOhm @ 15A, 10V
    1.3V @ 250μA
    4621pF @ 10V
    18A Ta 40A Tc
    85nC @ 10V
    -
    20V
    2.5V 10V
    -
    -
    40A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    PowerDI3333-8
    150°C
    -55°C
    ±12V
    4.621nF
    5.5 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP2008UFG-7
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    1
    2.4W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    22 ns
    P-Channel
    SWITCHING
    8m Ω @ 12A, 4.5V
    1V @ 250μA
    6909pF @ 10V
    14A Ta 54A Tc
    72nC @ 4.5V
    33ns
    20V
    1.5V 4.5V
    124 ns
    291 ns
    54A
    8V
    -
    -
    -
    850μm
    3.35mm
    3.35mm
    -
    ROHS3 Compliant
    -
    -
    -
    ±8V
    -
    -
    72.007789mg
    yes
    Other Transistors
    260
    40
    S-PDSO-N5
    1
    DRAIN
    -20V
    No SVHC
    Lead Free
    -
  • DMP2023UFDF-13
    22 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    1
    730mW Ta
    -
    ENHANCEMENT MODE
    -
    P-Channel
    SWITCHING
    27m Ω @ 7A, 4.5V
    1V @ 250μA
    1837pF @ 15V
    7.6A Ta
    27nC @ 4.5V
    -
    20V
    1.5V 4.5V
    -
    -
    7.6A
    -
    -
    0.027Ohm
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    ±8V
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    S-PDSO-N6
    -
    DRAIN
    -
    -
    -
    SINGLE WITH BUILT-IN DIODE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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