Diodes Incorporated DMP2047UCB4-7
- Part Number:
- DMP2047UCB4-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2480726-DMP2047UCB4-7
- Description:
- MOSFET P-CH 20V 4.1A 4UWLB
- Datasheet:
- DMP2047UCB4-7
Diodes Incorporated DMP2047UCB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2047UCB4-7.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case4-UFBGA, WLBGA
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormBALL
- Reference StandardAEC-Q101
- Number of Elements1
- Power Dissipation-Max1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time7.9 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs47m Ω @ 1A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds218pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4.1A Ta
- Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
- Rise Time10.7ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Fall Time (Typ)38 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)4.1A
- Gate to Source Voltage (Vgs)-6V
- Drain Current-Max (Abs) (ID)3.6A
- Drain-source On Resistance-Max0.06Ohm
- DS Breakdown Voltage-Min20V
- Height380μm
- Length1.05mm
- Width1.05mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMP2047UCB4-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 218pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.1A amps.A device can conduct a maximum continuous current of [3.6A] according to its drain current.It is [48 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -6V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
DMP2047UCB4-7 Features
a continuous drain current (ID) of 4.1A
the turn-off delay time is 48 ns
a 20V drain to source voltage (Vdss)
DMP2047UCB4-7 Applications
There are a lot of Diodes Incorporated
DMP2047UCB4-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 218pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.1A amps.A device can conduct a maximum continuous current of [3.6A] according to its drain current.It is [48 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -6V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
DMP2047UCB4-7 Features
a continuous drain current (ID) of 4.1A
the turn-off delay time is 48 ns
a 20V drain to source voltage (Vdss)
DMP2047UCB4-7 Applications
There are a lot of Diodes Incorporated
DMP2047UCB4-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP2047UCB4-7 More Descriptions
Trans MOSFET P-CH 20V 4.1A 4-Pin WLP T/R
MOSFET, P-CH, 20V, 4.1A, U-WLB1010;
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet Bvdss: 8V~24V U-Wlb1010-4 T&r 3K
MOSFET, P-CH, 20V, 4.1A, U-WLB1010;
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 6±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 3.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet Bvdss: 8V~24V U-Wlb1010-4 T&r 3K
The three parts on the right have similar specifications to DMP2047UCB4-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormReference StandardNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVgs (Max)Input CapacitanceRds On MaxWeightPbfree CodeSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ChannelsCase ConnectionDrain to Source Breakdown VoltageREACH SVHCLead FreeConfigurationView Compare
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DMP2047UCB4-723 WeeksSurface MountSurface Mount4-UFBGA, WLBGA4SILICON-55°C~150°C TJTape & Reel (TR)2015e1Active1 (Unlimited)4EAR99Tin/Silver/Copper (Sn/Ag/Cu)HIGH RELIABILITYMOSFET (Metal Oxide)BOTTOMBALLAEC-Q10111W TaSingleENHANCEMENT MODE7.9 nsP-ChannelSWITCHING47m Ω @ 1A, 4.5V1.2V @ 250μA218pF @ 10V4.1A Ta2.3nC @ 4.5V10.7ns20V2.5V 4.5V38 ns48 ns4.1A-6V3.6A0.06Ohm20V380μm1.05mm1.05mmNoROHS3 Compliant-------------------
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17 WeeksSurface MountSurface Mount8-PowerVDFN8--55°C~150°C TJTape & Reel (TR)2007-Active1 (Unlimited)----MOSFET (Metal Oxide)----2.3W Ta---P-Channel-5.5mOhm @ 15A, 10V1.3V @ 250μA4621pF @ 10V18A Ta 40A Tc85nC @ 10V-20V2.5V 10V--40A--------ROHS3 CompliantPowerDI3333-8150°C-55°C±12V4.621nF5.5 mΩ------------
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19 WeeksSurface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)5EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)DUALNO LEAD-12.4W Ta 41W TcSingleENHANCEMENT MODE22 nsP-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc72nC @ 4.5V33ns20V1.5V 4.5V124 ns291 ns54A8V---850μm3.35mm3.35mm-ROHS3 Compliant---±8V--72.007789mgyesOther Transistors26040S-PDSO-N51DRAIN-20VNo SVHCLead Free-
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22 WeeksSurface MountSurface Mount6-UDFN Exposed Pad-SILICON-55°C~150°C TJTape & Reel (TR)2015e4Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-MOSFET (Metal Oxide)DUALNO LEAD-1730mW Ta-ENHANCEMENT MODE-P-ChannelSWITCHING27m Ω @ 7A, 4.5V1V @ 250μA1837pF @ 15V7.6A Ta27nC @ 4.5V-20V1.5V 4.5V--7.6A--0.027Ohm20V----ROHS3 Compliant---±8V-----NOT SPECIFIEDNOT SPECIFIEDS-PDSO-N6-DRAIN---SINGLE WITH BUILT-IN DIODE
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