Diodes Incorporated DMP2022LSS-13
- Part Number:
- DMP2022LSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478128-DMP2022LSS-13
- Description:
- MOSFET P-CH 20V 10A 8-SOIC
- Datasheet:
- DMP2022LSS-13
Diodes Incorporated DMP2022LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2022LSS-13.
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight850.995985mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time7.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs13m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2444pF @ 10V
- Current - Continuous Drain (Id) @ 25°C10A Ta
- Gate Charge (Qg) (Max) @ Vgs56.9nC @ 10V
- Rise Time9.9ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Fall Time (Typ)76.5 ns
- Turn-Off Delay Time108 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage770mV
- Gate to Source Voltage (Vgs)12V
- Pulsed Drain Current-Max (IDM)35A
- DS Breakdown Voltage-Min20V
- Height1.5mm
- Length5.3mm
- Width4.1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMP2022LSS-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2444pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.It is [108 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 35A.A turn-on delay time of 7.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 770mV.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
DMP2022LSS-13 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 108 ns
based on its rated peak drain current 35A.
a threshold voltage of 770mV
a 20V drain to source voltage (Vdss)
DMP2022LSS-13 Applications
There are a lot of Diodes Incorporated
DMP2022LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2444pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.It is [108 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 35A.A turn-on delay time of 7.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 770mV.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
DMP2022LSS-13 Features
a continuous drain current (ID) of 10A
the turn-off delay time is 108 ns
based on its rated peak drain current 35A.
a threshold voltage of 770mV
a 20V drain to source voltage (Vdss)
DMP2022LSS-13 Applications
There are a lot of Diodes Incorporated
DMP2022LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP2022LSS-13 More Descriptions
P-Channel 20 V 13 mOhm 2.5 W SMT Enhancement Mode Mosfet - SOIC-8
Single P-Channel Enhancement MOSFET SOP8 | Diodes Inc DMP2022LSS-13
MOSFET, P-CH, -20V, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: 770mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET P-CH 20V 10A Automotive 8-Pin SOP T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 10A I(D), 20V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Single P-Channel Enhancement MOSFET SOP8 | Diodes Inc DMP2022LSS-13
MOSFET, P-CH, -20V, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: 770mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET P-CH 20V 10A Automotive 8-Pin SOP T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 10A I(D), 20V, 0.013ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to DMP2022LSS-13.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusTerminal FinishJESD-30 CodeCase ConnectionDrain to Source Breakdown VoltageLead FreeSeriesConfigurationDrain-source On Resistance-MaxView Compare
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DMP2022LSS-1319 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8850.995985mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3yesActive1 (Unlimited)8EAR99HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260408112.5W TaSingleENHANCEMENT MODE2.5W7.5 nsP-ChannelSWITCHING13m Ω @ 10A, 10V1.1V @ 250μA2444pF @ 10V10A Ta56.9nC @ 10V9.9ns20V2.5V 10V±12V76.5 ns108 ns10A770mV12V35A20V1.5mm5.3mm4.1mmNo SVHCNoROHS3 Compliant---------
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19 Weeks-Surface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3yesActive1 (Unlimited)5EAR99-Other TransistorsMOSFET (Metal Oxide)DUALNO LEAD26040-112.4W Ta 41W TcSingleENHANCEMENT MODE-22 nsP-ChannelSWITCHING8m Ω @ 12A, 4.5V1V @ 250μA6909pF @ 10V14A Ta 54A Tc72nC @ 4.5V33ns20V1.5V 4.5V±8V124 ns291 ns54A-8V--850μm3.35mm3.35mmNo SVHC-ROHS3 CompliantMatte Tin (Sn)S-PDSO-N5DRAIN-20VLead Free---
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17 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---780mW Ta----P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta7.8nC @ 10V-20V2.5V 4.5V±12V--3.1A---------ROHS3 CompliantMatte Tin (Sn)----Automotive, AEC-Q101--
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22 Weeks-Surface MountSurface Mount6-UDFN Exposed Pad--SILICON-55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)6EAR99--MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIED-1-730mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING27m Ω @ 7A, 4.5V1V @ 250μA1837pF @ 15V7.6A Ta27nC @ 4.5V-20V1.5V 4.5V±8V--7.6A---20V-----ROHS3 CompliantNickel/Palladium/Gold (Ni/Pd/Au)S-PDSO-N6DRAIN---SINGLE WITH BUILT-IN DIODE0.027Ohm
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