DMP2002UPS-13

Diodes Incorporated DMP2002UPS-13

Part Number:
DMP2002UPS-13
Manufacturer:
Diodes Incorporated
Ventron No:
2482058-DMP2002UPS-13
Description:
MOSFET P-CH 20V POWERDI5060-8
ECAD Model:
Datasheet:
DMP2002UPS-13

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Specifications
Diodes Incorporated DMP2002UPS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2002UPS-13.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.3W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.9m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    12826pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    585nC @ 10V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 10V
  • Vgs (Max)
    ±12V
  • Continuous Drain Current (ID)
    60A
  • Drain-source On Resistance-Max
    0.0019Ohm
  • Pulsed Drain Current-Max (IDM)
    100A
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    ROHS3 Compliant
Description
DMP2002UPS-13 Overview
The maximum input capacitance of this device is 12826pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 10V), this device helps reduce its power consumption.

DMP2002UPS-13 Features
a continuous drain current (ID) of 60A
based on its rated peak drain current 100A.
a 20V drain to source voltage (Vdss)


DMP2002UPS-13 Applications
There are a lot of Diodes Incorporated
DMP2002UPS-13 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMP2002UPS-13 More Descriptions
Mosfet, P-Ch, 20V, 60A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMP2002UPS-13
Trans MOSFET P-CH 20V 60A 8-Pin PowerDI EP T/R
20V P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGSDiodes Inc SCT
20V 60A 2.3W 1.9mΩ@10V,25A P Channel PowerDI5060-8 MOSFETs ROHS
Power Field-Effect Transistor, 60A I(D), 20V, 0.0019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, 20V, 60A, POWERDI 5060;
P-CH 20V 60A 1,9mOhm PwDI5060-8
MOSFET P-CH 20V 60A PWRDI5060-8
Product Comparison
The three parts on the right have similar specifications to DMP2002UPS-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Rds On Max
    Series
    View Compare
  • DMP2002UPS-13
    DMP2002UPS-13
    17 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    AEC-Q101
    R-PDSO-F5
    1
    SINGLE WITH BUILT-IN DIODE
    2.3W Ta
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    1.9m Ω @ 25A, 10V
    1.4V @ 250μA
    12826pF @ 10V
    60A Tc
    585nC @ 10V
    20V
    2.5V 10V
    ±12V
    60A
    0.0019Ohm
    100A
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • DMP2007UFG-13
    17 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2.3W Ta
    -
    -
    P-Channel
    -
    5.5mOhm @ 15A, 10V
    1.3V @ 250μA
    4621pF @ 10V
    18A Ta 40A Tc
    85nC @ 10V
    20V
    2.5V 10V
    ±12V
    40A
    -
    -
    -
    ROHS3 Compliant
    PowerDI3333-8
    150°C
    -55°C
    4.621nF
    5.5 mΩ
    -
  • DMP2170U-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    -
    -
    780mW Ta
    -
    -
    P-Channel
    -
    90m Ω @ 3.5A, 4.5V
    1.25V @ 250μA
    303pF @ 10V
    3.1A Ta
    7.8nC @ 10V
    20V
    2.5V 4.5V
    ±12V
    3.1A
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    Automotive, AEC-Q101
  • DMP2023UFDF-13
    22 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    S-PDSO-N6
    1
    SINGLE WITH BUILT-IN DIODE
    730mW Ta
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    27m Ω @ 7A, 4.5V
    1V @ 250μA
    1837pF @ 15V
    7.6A Ta
    27nC @ 4.5V
    20V
    1.5V 4.5V
    ±8V
    7.6A
    0.027Ohm
    -
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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