Diodes Incorporated DMP2002UPS-13
- Part Number:
- DMP2002UPS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2482058-DMP2002UPS-13
- Description:
- MOSFET P-CH 20V POWERDI5060-8
- Datasheet:
- DMP2002UPS-13
Diodes Incorporated DMP2002UPS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2002UPS-13.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Reference StandardAEC-Q101
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.3W Ta
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.9m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds12826pF @ 10V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Gate Charge (Qg) (Max) @ Vgs585nC @ 10V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Continuous Drain Current (ID)60A
- Drain-source On Resistance-Max0.0019Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
DMP2002UPS-13 Overview
The maximum input capacitance of this device is 12826pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 10V), this device helps reduce its power consumption.
DMP2002UPS-13 Features
a continuous drain current (ID) of 60A
based on its rated peak drain current 100A.
a 20V drain to source voltage (Vdss)
DMP2002UPS-13 Applications
There are a lot of Diodes Incorporated
DMP2002UPS-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 12826pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.There is no pulsed drain current maximum for this device based on its rated peak drain current 100A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 10V), this device helps reduce its power consumption.
DMP2002UPS-13 Features
a continuous drain current (ID) of 60A
based on its rated peak drain current 100A.
a 20V drain to source voltage (Vdss)
DMP2002UPS-13 Applications
There are a lot of Diodes Incorporated
DMP2002UPS-13 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
DMP2002UPS-13 More Descriptions
Mosfet, P-Ch, 20V, 60A, Powerdi 5060 Rohs Compliant: Yes |Diodes Inc. DMP2002UPS-13
Trans MOSFET P-CH 20V 60A 8-Pin PowerDI EP T/R
20V P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGSDiodes Inc SCT
20V 60A 2.3W 1.9mΩ@10V,25A P Channel PowerDI5060-8 MOSFETs ROHS
Power Field-Effect Transistor, 60A I(D), 20V, 0.0019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, 20V, 60A, POWERDI 5060;
P-CH 20V 60A 1,9mOhm PwDI5060-8
MOSFET P-CH 20V 60A PWRDI5060-8
Trans MOSFET P-CH 20V 60A 8-Pin PowerDI EP T/R
20V P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGSDiodes Inc SCT
20V 60A 2.3W 1.9mΩ@10V,25A P Channel PowerDI5060-8 MOSFETs ROHS
Power Field-Effect Transistor, 60A I(D), 20V, 0.0019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, 20V, 60A, POWERDI 5060;
P-CH 20V 60A 1,9mOhm PwDI5060-8
MOSFET P-CH 20V 60A PWRDI5060-8
The three parts on the right have similar specifications to DMP2002UPS-13.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxSeriesView Compare
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DMP2002UPS-1317 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)5EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDAEC-Q101R-PDSO-F51SINGLE WITH BUILT-IN DIODE2.3W TaENHANCEMENT MODEDRAINP-ChannelSWITCHING1.9m Ω @ 25A, 10V1.4V @ 250μA12826pF @ 10V60A Tc585nC @ 10V20V2.5V 10V±12V60A0.0019Ohm100A20VROHS3 Compliant-------
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17 WeeksSurface MountSurface Mount8-PowerVDFN8--55°C~150°C TJTape & Reel (TR)2007-Active1 (Unlimited)----MOSFET (Metal Oxide)---------2.3W Ta--P-Channel-5.5mOhm @ 15A, 10V1.3V @ 250μA4621pF @ 10V18A Ta 40A Tc85nC @ 10V20V2.5V 10V±12V40A---ROHS3 CompliantPowerDI3333-8150°C-55°C4.621nF5.5 mΩ-
-
17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)-EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)--NOT SPECIFIED-NOT SPECIFIED----780mW Ta--P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta7.8nC @ 10V20V2.5V 4.5V±12V3.1A---ROHS3 Compliant-----Automotive, AEC-Q101
-
22 WeeksSurface MountSurface Mount6-UDFN Exposed Pad-SILICON-55°C~150°C TJTape & Reel (TR)2015e4Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIED-NOT SPECIFIED-S-PDSO-N61SINGLE WITH BUILT-IN DIODE730mW TaENHANCEMENT MODEDRAINP-ChannelSWITCHING27m Ω @ 7A, 4.5V1V @ 250μA1837pF @ 15V7.6A Ta27nC @ 4.5V20V1.5V 4.5V±8V7.6A0.027Ohm-20VROHS3 Compliant------
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