Diodes Incorporated DMN5L06WK-7

Name: DMN5L06WK-7
Brand: Diodes Incorporated
SKU: 2478101-DMN5L06WK-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN5L06WK-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2478101-DMN5L06WK-7

Description:: MOSFET N-CH 50V 300MA SC70-3

ECAD Model:

Datasheet:: DMN5L06WK-7

Specifications

Diodes Incorporated DMN5L06WK-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN5L06WK-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
2Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY, FAST SWITCHING
Subcategory
FET General Purpose Powers
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
280mA
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
250mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
250mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
300mA Ta
Drive Voltage (Max Rds On,Min Rds On)
1.8V 5V
Vgs (Max)
±20V
Continuous Drain Current (ID)
300mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
50V
Feedback Cap-Max (Crss)
5 pF
Height
1mm
Length
2.15mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN5L06WK-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 50pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 50V and VGS=50V, so the drain-source breakdown voltage is 50V in this case.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 5V).

DMN5L06WK-7 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 50V voltage
a threshold voltage of 1V

DMN5L06WK-7 Applications
There are a lot of Diodes Incorporated
DMN5L06WK-7 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

DMN5L06WK-7 More Descriptions

Trans MOSFET N-CH 50V 0.3A Automotive 3-Pin SOT-323 T/R
N-Channel 50 V 2 Ohm MosFet Surface Mount - SOT-323-3
MOSFET N-Channel 50V 0.3A SOT323 | Diodes Inc DMN5L06WK-7
Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFETs - Low Threshold Voltage N-Channel
Mosfet, N-Ch, 50V, Sot-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300Ma; Drain Source Voltage Vds:50V; On Resistance Rds(On):2Ohm; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1V; Power Dissipation Rohs Compliant: Yes |Diodes Inc. DMN5L06WK-7

Product Comparison

The three parts on the right have similar specifications to DMN5L06WK-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Series

Drain to Source Voltage (Vdss)

View Compare
DMN5L06WK-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.010099mg

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

3

EAR99

2Ohm

Matte Tin (Sn)

HIGH RELIABILITY, FAST SWITCHING

FET General Purpose Powers

50V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

280mA

40

3

1

1

250mW Ta

Single

ENHANCEMENT MODE

250mW

N-Channel

SWITCHING

2 Ω @ 50mA, 5V

1V @ 250μA

50pF @ 25V

300mA Ta

1.8V 5V

±20V

300mA

1V

20V

50V

5 pF

1mm

2.15mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
DMN5L06T-7

Diodes Incorporated

-

Surface Mount

Surface Mount

SOT-523

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

-

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

LOW CAPACITANCE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

3

1

-

150mW Ta

Single

ENHANCEMENT MODE

150mW

N-Channel

SWITCHING

3 Ω @ 200mA, 2.7V

1.2V @ 250μA

50pF @ 25V

280mA Ta

1.8V 2.7V

±20V

280mA

-

20V

50V

5 pF

-

-

-

-

No

RoHS Compliant

-

0.28A

3Ohm

-

-

DMN5L06WK-7 vs DMN5L06T-7
DMN5L06WKQ-7

Diodes Incorporated

16 Weeks

-

Surface Mount

SC-70, SOT-323

-

-

-

-65°C~150°C TJ

Tape & Reel (TR)

2012

e3

-

Active

1 (Unlimited)

-

-

-

Matte Tin (Sn)

-

-

-

MOSFET (Metal Oxide)

-

-

260

-

30

-

-

-

250mW Ta

-

-

-

N-Channel

-

2 Ω @ 50mA, 5V

1V @ 250μA

50pF @ 25V

300mA Ta

1.8V 5V

±20V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

Automotive, AEC-Q101

50V

DMN5L06WK-7 vs DMN5L06WKQ-7
DMN55D0UT-7

Diodes Incorporated

18 Weeks

Surface Mount

Surface Mount

SOT-523

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-

40

3

1

1

200mW Ta

Single

ENHANCEMENT MODE

200mW

N-Channel

-

4 Ω @ 100mA, 4V

1V @ 250μA

25pF @ 10V

160mA Ta

2.5V 4V

±12V

160mA

800mV

12V

50V

-

750μm

1.6mm

800μm

No SVHC

No

ROHS3 Compliant

Lead Free

-

4Ohm

-

-

DMN5L06WK-7 vs DMN55D0UT-7