Diodes Incorporated DMG6301UDW-7

Name: DMG6301UDW-7
Brand: Diodes Incorporated
SKU: 2473790-DMG6301UDW-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG6301UDW-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2473790-DMG6301UDW-7

Description:: MOSFET 2N-CH 25V 0.24A SOT363

ECAD Model:

Datasheet:: DMG6301UDW-7

Specifications

Diodes Incorporated DMG6301UDW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG6301UDW-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Weight
6.010099mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
300mW
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
DMG6301
Number of Channels
2
Element Configuration
Dual
Turn On Delay Time
2.9 ns
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
27.9pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
0.36nC @ 4.5V
Rise Time
1.8ns
Drain to Source Voltage (Vdss)
25V
Fall Time (Typ)
2.3 ns
Turn-Off Delay Time
6.6 ns
Continuous Drain Current (ID)
240mA
Gate to Source Voltage (Vgs)
8V
FET Feature
Standard
RoHS Status
ROHS3 Compliant

Description

DMG6301UDW-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG6301UDW-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG6301UDW-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMG6301UDW-7 More Descriptions

Transistor MOSFET Array Dual N-CH 25V 0.24A 6-Pin SOT-363 T/R
Dual Channel 25 V 4/5 Ohm Surface Mount Enhancement Mode Mosfet - SOT-363
Small Signal Field-Effect Transistor, 0.24A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
Mosfet Bvdss: 25V~30V Sot363 T&r 3K
N-Channel Mosfet, 25V VDS, 8±V VGSDiodes Inc SCT
French Electronic Distributor since 1988
MOSFET, DUAL N-CH, 25V, 0.24A, 0.3W; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:240mA; On Resistance Rds(on):3.8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V

Product Comparison

The three parts on the right have similar specifications to DMG6301UDW-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Weight

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Max Power Dissipation

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Number of Channels

Element Configuration

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

FET Feature

RoHS Status

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Current - Continuous Drain (Id) @ 25°C

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Number of Pins

Transistor Element Material

Pbfree Code

Number of Terminations

Additional Feature

Subcategory

Terminal Form

Reference Standard

Number of Elements

Configuration

Operating Mode

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

FET Technology

Pin Count

Power Dissipation

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
DMG6301UDW-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6.010099mg

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

300mW

260

30

DMG6301

2

Dual

2.9 ns

2 N-Channel (Dual)

4 Ω @ 400mA, 4.5V

1.5V @ 250μA

27.9pF @ 10V

0.36nC @ 4.5V

1.8ns

25V

2.3 ns

6.6 ns

240mA

8V

Standard

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMG6301UDW-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

6.010099mg

-55°C~150°C TJ

Tape & Reel (TR)

2012

-

Active

1 (Unlimited)

-

-

300mW

-

-

-

2

Dual

2.9 ns

2 N-Channel (Dual)

4Ohm @ 400mA, 4.5V

1.5V @ 250μA

27.9pF @ 10V

0.36nC @ 4.5V

1.8ns

25V

2.3 ns

6.6 ns

240mA

8V

Standard

ROHS3 Compliant

SOT-363

150°C

-55°C

300mW

240mA

25V

27.9pF

3.8Ohm

4 Ω

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMG6301UDW-7 vs DMG6301UDW-13
DMG6898LSDQ-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

1.28W

260

40

-

-

-

-

2 N-Channel (Dual)

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

26nC @ 10V

-

20V

-

-

9.5A

-

Standard

ROHS3 Compliant

-

-

-

1.28W

-

-

-

-

-

8

SILICON

yes

8

HIGH RELIABILITY

FET General Purpose Power

GULL WING

AEC-Q101

2

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

0.016Ohm

30A

20V

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

DMG6301UDW-7 vs DMG6898LSDQ-13
DMG6898LSD-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

73.992255mg

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

1.28W

260

40

DMG6898LSD

-

-

11.67 ns

2 N-Channel (Dual)

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

26nC @ 10V

12.49ns

20V

12.33 ns

35.89 ns

9.5A

12V

Logic Level Gate

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

8

SILICON

yes

8

ESD PROTECTED, HIGH RELIABILITY

FET General Purpose Power

GULL WING

-

2

-

ENHANCEMENT MODE

SWITCHING

0.016Ohm

30A

-

METAL-OXIDE SEMICONDUCTOR

8

1.28W

1.5mm

4.95mm

3.95mm

No SVHC

No

Lead Free

DMG6301UDW-7 vs DMG6898LSD-13