Diodes Incorporated DMG6602SVTQ-7

Name: DMG6602SVTQ-7
Brand: Diodes Incorporated
SKU: 3069664-DMG6602SVTQ-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG6602SVTQ-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3069664-DMG6602SVTQ-7

Description:: MOSFET N/P-CH 30V TSOT26

ECAD Model:

Datasheet:: DMG6602SVTQ

Specifications

Diodes Incorporated DMG6602SVTQ-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG6602SVTQ-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Max Power Dissipation
840mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G6
Number of Elements
2
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
840mW
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 15V
Current - Continuous Drain (Id) @ 25°C
3.4A 2.8A
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Drain to Source Voltage (Vdss)
30V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)
2.8A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.06Ohm
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Standard
Feedback Cap-Max (Crss)
80 pF
Height
1mm
RoHS Status
ROHS3 Compliant

Description

Diodes Inc. Transistors - FETs, MOSFETs - Arrays DMG6602SVTQ-7 is a dual N-channel and P-channel MOSFET array in a TSOT26 package. It is designed for use in low voltage, low power applications. It features a low on-resistance of 30V and a low gate threshold voltage of 1.8V. It is suitable for use in a wide range of applications, including power management, motor control, and switching applications. It is also suitable for use in automotive, industrial, and consumer electronics applications. The DMG6602SVTQ-7 is RoHS compliant and is available in a variety of package sizes.

DMG6602SVTQ-7 More Descriptions

Transistor MOSFET Array N-CH/P-CH 30V 3.4A 6-Pin TSOT-26 T/RAvnet Japan
Mosfet, Aec-Q101, Complement, 30V, Tsot26; Transistor Polarity:N And P Complement; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.038Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Rohs Compliant: Yes |Diodes Inc. DMG6602SVTQ-7
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to DMG6602SVTQ-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Reference Standard

JESD-30 Code

Number of Elements

Number of Channels

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Technology

Max Junction Temperature (Tj)

FET Feature

Feedback Cap-Max (Crss)

Height

RoHS Status

Weight

Base Part Number

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Number of Pins

Pbfree Code

Subcategory

Configuration

Power - Max

Pulsed Drain Current-Max (IDM)

Pin Count

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
DMG6602SVTQ-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

840mW

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

R-PDSO-G6

2

2

ENHANCEMENT MODE

840mW

N and P-Channel

SWITCHING

60m Ω @ 3.1A, 10V

2.3V @ 250μA

400pF @ 15V

3.4A 2.8A

13nC @ 10V

30V

N-CHANNEL AND P-CHANNEL

2.8A

20V

0.06Ohm

30V

METAL-OXIDE SEMICONDUCTOR

150°C

Standard

80 pF

1mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMG6301UDW-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

300mW

-

-

260

30

-

-

-

2

-

-

2 N-Channel (Dual)

-

4 Ω @ 400mA, 4.5V

1.5V @ 250μA

27.9pF @ 10V

-

0.36nC @ 4.5V

25V

-

240mA

8V

-

-

-

-

Standard

-

-

ROHS3 Compliant

6.010099mg

DMG6301

Dual

2.9 ns

1.8ns

2.3 ns

6.6 ns

-

-

-

-

-

-

-

-

-

-

-

-

DMG6602SVTQ-7 vs DMG6301UDW-7
DMG6898LSDQ-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

1.28W

-

GULL WING

260

40

AEC-Q101

-

2

-

ENHANCEMENT MODE

-

2 N-Channel (Dual)

SWITCHING

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

-

26nC @ 10V

20V

-

9.5A

-

0.016Ohm

20V

METAL-OXIDE SEMICONDUCTOR

-

Standard

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

8

yes

FET General Purpose Power

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

1.28W

30A

-

-

-

-

-

-

DMG6602SVTQ-7 vs DMG6898LSDQ-13
DMG6898LSD-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

ESD PROTECTED, HIGH RELIABILITY

1.28W

-

GULL WING

260

40

-

-

2

-

ENHANCEMENT MODE

1.28W

2 N-Channel (Dual)

SWITCHING

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

-

26nC @ 10V

20V

-

9.5A

12V

0.016Ohm

-

METAL-OXIDE SEMICONDUCTOR

-

Logic Level Gate

-

1.5mm

ROHS3 Compliant

73.992255mg

DMG6898LSD

-

11.67 ns

12.49ns

12.33 ns

35.89 ns

8

yes

FET General Purpose Power

-

-

30A

8

4.95mm

3.95mm

No SVHC

No

Lead Free

DMG6602SVTQ-7 vs DMG6898LSD-13