Diodes Incorporated DMG6898LSD-13

Name: DMG6898LSD-13
Brand: Diodes Incorporated
SKU: 2473567-DMG6898LSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG6898LSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2473567-DMG6898LSD-13

Description:: MOSFET 2N-CH 20V 9.5A 8SO

ECAD Model:

Datasheet:: DMG6898LSD-13

Specifications

Diodes Incorporated DMG6898LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG6898LSD-13.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
ESD PROTECTED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
1.28W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMG6898LSD
Pin Count
8
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.28W
Turn On Delay Time
11.67 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1149pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Rise Time
12.49ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
12.33 ns
Turn-Off Delay Time
35.89 ns
Continuous Drain Current (ID)
9.5A
Gate to Source Voltage (Vgs)
12V
Drain-source On Resistance-Max
0.016Ohm
Pulsed Drain Current-Max (IDM)
30A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.5mm
Length
4.95mm
Width
3.95mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMG6898LSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG6898LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG6898LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMG6898LSD-13 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 9.5A 8-Pin SOIC T/R
DMG6898LSD Series 20 V 9.5 A Dual N-Channel Enhancement Mode Mosfet - SOIC-8
Mosfet, Dual, N-Ch, 20V, 9.5A Rohs Compliant: Yes |Diodes Inc. DMG6898LSD-13
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.28 W

Product Comparison

The three parts on the right have similar specifications to DMG6898LSD-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Number of Channels

Element Configuration

Reference Standard

Configuration

Power - Max

DS Breakdown Voltage-Min

View Compare
DMG6898LSD-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

ESD PROTECTED, HIGH RELIABILITY

FET General Purpose Power

1.28W

GULL WING

260

40

DMG6898LSD

8

2

ENHANCEMENT MODE

1.28W

11.67 ns

2 N-Channel (Dual)

SWITCHING

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

26nC @ 10V

12.49ns

20V

12.33 ns

35.89 ns

9.5A

12V

0.016Ohm

30A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

4.95mm

3.95mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
DMG6968UTS-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-TSSOP (0.173, 4.40mm Width)

8

157.991892mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

1W

GULL WING

260

40

-

8

2

ENHANCEMENT MODE

-

53 ns

2 N-Channel (Dual) Common Drain

SWITCHING

23m Ω @ 6.5A, 4.5V

950mV @ 250μA

143pF @ 10V

8.8nC @ 4.5V

78ns

20V

234 ns

562 ns

5.2A

12V

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

No SVHC

No

ROHS3 Compliant

-

2

Dual

-

-

-

-

DMG6898LSD-13 vs DMG6968UTS-13
DMG6301UDW-7

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

6-TSSOP, SC-88, SOT-363

-

6.010099mg

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

300mW

-

260

30

DMG6301

-

-

-

-

2.9 ns

2 N-Channel (Dual)

-

4 Ω @ 400mA, 4.5V

1.5V @ 250μA

27.9pF @ 10V

0.36nC @ 4.5V

1.8ns

25V

2.3 ns

6.6 ns

240mA

8V

-

-

-

Standard

-

-

-

-

-

ROHS3 Compliant

-

2

Dual

-

-

-

-

DMG6898LSD-13 vs DMG6301UDW-7
DMG6898LSDQ-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

1.28W

GULL WING

260

40

-

-

2

ENHANCEMENT MODE

-

-

2 N-Channel (Dual)

SWITCHING

16m Ω @ 9.4A, 4.5V

1.5V @ 250μA

1149pF @ 10V

26nC @ 10V

-

20V

-

-

9.5A

-

0.016Ohm

30A

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

-

ROHS3 Compliant

-

-

-

AEC-Q101

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

1.28W

20V

DMG6898LSD-13 vs DMG6898LSDQ-13