Diodes Incorporated DMG4466SSS-13
- Part Number:
- DMG4466SSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2480905-DMG4466SSS-13
- Description:
- MOSFET N-CH 30V 10A 8SO
- Datasheet:
- DMG4466SSS-13
Diodes Incorporated DMG4466SSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG4466SSS-13.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.42W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.42W
- Turn On Delay Time2.9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs23m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds478.9pF @ 15V
- Current - Continuous Drain (Id) @ 25°C10A Ta
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time7.9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±25V
- Fall Time (Typ)3.1 ns
- Turn-Off Delay Time14.6 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)25V
- Drain-source On Resistance-Max0.023Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)60A
- Height1.5mm
- Length4.95mm
- Width3.95mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMG4466SSS-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 478.9pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [14.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 2.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMG4466SSS-13 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14.6 ns
based on its rated peak drain current 60A.
DMG4466SSS-13 Applications
There are a lot of Diodes Incorporated
DMG4466SSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 478.9pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [14.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 2.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMG4466SSS-13 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14.6 ns
based on its rated peak drain current 60A.
DMG4466SSS-13 Applications
There are a lot of Diodes Incorporated
DMG4466SSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMG4466SSS-13 More Descriptions
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes |Diodes Inc. DMG4466SSS-13
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 10A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
N-Channel 30V 10A (Ta) 1.42W (Ta) Surface Mount 8-SOP
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 10A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
N-Channel 30V 10A (Ta) 1.42W (Ta) Surface Mount 8-SOP
The three parts on the right have similar specifications to DMG4466SSS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusReach Compliance CodeJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)JEDEC-95 CodeDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Case ConnectionLead FreeQualification StatusDrain Current-Max (Abs) (ID)FET FeatureView Compare
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DMG4466SSS-1315 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJCut Tape (CT)2017e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING260408111.42W TaSingleENHANCEMENT MODE1.42W2.9 nsN-ChannelSWITCHING23m Ω @ 10A, 10V2.4V @ 250μA478.9pF @ 15V10A Ta17nC @ 10V7.9ns4.5V 10V±25V3.1 ns14.6 ns10A25V0.023Ohm30V60A1.5mm4.95mm3.95mmNo SVHCNoROHS3 Compliant-------------
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7 WeeksThrough HoleThrough HoleTO-220-3--SILICON-55°C~150°C TJTube2016e3-Obsolete1 (Unlimited)3-Matte Tin (Sn)--MOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDNOT SPECIFIED-1-113W Ta-ENHANCEMENT MODE--N-ChannelSWITCHING2.5 Ω @ 2A, 10V4.5V @ 250μA532pF @ 25V4.5A Ta14.3nC @ 10V-10V±30V--4.5A---6A-----ROHS3 Compliantnot_compliantR-PSFM-T3SINGLE WITH BUILT-IN DIODE600VTO-220AB600V90 mJ-----
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15 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-3.949996gSILICON-55°C~150°C TJDigi-Reel®2012e3noActive1 (Unlimited)2EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)SINGLEGULL WING260404121.71W Ta-ENHANCEMENT MODE1.71W5.03 nsN-ChannelSWITCHING17m Ω @ 9A, 10V1.6V @ 250μA798pF @ 10V10A Ta8.7nC @ 5V4.5ns4.5V 10V±25V8.55 ns26.33 ns10A25V-30V48A---No SVHCNoROHS3 Compliant--SINGLE WITH BUILT-IN DIODE----DRAINLead Free---
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7 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)2011e3yesObsolete1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING2604081-1.54W Ta-ENHANCEMENT MODE-6.62 nsN-ChannelSWITCHING15m Ω @ 10.7A, 10V2.3V @ 250μA1849pF @ 15V8A Ta18.5nC @ 10V8.73ns4.5V 10V±12V4.69 ns36.41 ns8A12V0.015Ohm-45A---No SVHC-ROHS3 Compliant--SINGLE WITH BUILT-IN DIODE30V-30V---Not Qualified8ASchottky Diode (Body)
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