DMG4466SSS-13

Diodes Incorporated DMG4466SSS-13

Part Number:
DMG4466SSS-13
Manufacturer:
Diodes Incorporated
Ventron No:
2480905-DMG4466SSS-13
Description:
MOSFET N-CH 30V 10A 8SO
ECAD Model:
Datasheet:
DMG4466SSS-13

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Specifications
Diodes Incorporated DMG4466SSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG4466SSS-13.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    73.992255mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.42W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.42W
  • Turn On Delay Time
    2.9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    478.9pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    7.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    3.1 ns
  • Turn-Off Delay Time
    14.6 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    25V
  • Drain-source On Resistance-Max
    0.023Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Height
    1.5mm
  • Length
    4.95mm
  • Width
    3.95mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMG4466SSS-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 478.9pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 10A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [14.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 2.9 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

DMG4466SSS-13 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14.6 ns
based on its rated peak drain current 60A.


DMG4466SSS-13 Applications
There are a lot of Diodes Incorporated
DMG4466SSS-13 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMG4466SSS-13 More Descriptions
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes |Diodes Inc. DMG4466SSS-13
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SO T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 10A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
N-Channel 30V 10A (Ta) 1.42W (Ta) Surface Mount 8-SOP
Product Comparison
The three parts on the right have similar specifications to DMG4466SSS-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Reach Compliance Code
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Case Connection
    Lead Free
    Qualification Status
    Drain Current-Max (Abs) (ID)
    FET Feature
    View Compare
  • DMG4466SSS-13
    DMG4466SSS-13
    15 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2017
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    1
    1.42W Ta
    Single
    ENHANCEMENT MODE
    1.42W
    2.9 ns
    N-Channel
    SWITCHING
    23m Ω @ 10A, 10V
    2.4V @ 250μA
    478.9pF @ 15V
    10A Ta
    17nC @ 10V
    7.9ns
    4.5V 10V
    ±25V
    3.1 ns
    14.6 ns
    10A
    25V
    0.023Ohm
    30V
    60A
    1.5mm
    4.95mm
    3.95mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG4N60SCT
    7 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2016
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    -
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    -
    113W Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    2.5 Ω @ 2A, 10V
    4.5V @ 250μA
    532pF @ 25V
    4.5A Ta
    14.3nC @ 10V
    -
    10V
    ±30V
    -
    -
    4.5A
    -
    -
    -
    6A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    not_compliant
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    600V
    TO-220AB
    600V
    90 mJ
    -
    -
    -
    -
    -
  • DMG4800LK3-13
    15 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3.949996g
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2012
    e3
    no
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    40
    4
    1
    2
    1.71W Ta
    -
    ENHANCEMENT MODE
    1.71W
    5.03 ns
    N-Channel
    SWITCHING
    17m Ω @ 9A, 10V
    1.6V @ 250μA
    798pF @ 10V
    10A Ta
    8.7nC @ 5V
    4.5ns
    4.5V 10V
    ±25V
    8.55 ns
    26.33 ns
    10A
    25V
    -
    30V
    48A
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    SINGLE WITH BUILT-IN DIODE
    -
    -
    -
    -
    DRAIN
    Lead Free
    -
    -
    -
  • DMG4812SSS-13
    7 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    -
    1.54W Ta
    -
    ENHANCEMENT MODE
    -
    6.62 ns
    N-Channel
    SWITCHING
    15m Ω @ 10.7A, 10V
    2.3V @ 250μA
    1849pF @ 15V
    8A Ta
    18.5nC @ 10V
    8.73ns
    4.5V 10V
    ±12V
    4.69 ns
    36.41 ns
    8A
    12V
    0.015Ohm
    -
    45A
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    -
    -
    SINGLE WITH BUILT-IN DIODE
    30V
    -
    30V
    -
    -
    -
    Not Qualified
    8A
    Schottky Diode (Body)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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