Diodes Incorporated DMG4435SSS-13

Name: DMG4435SSS-13
Brand: Diodes Incorporated
SKU: 2480709-DMG4435SSS-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG4435SSS-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2480709-DMG4435SSS-13

Description:: MOSFET P-CH 30V 7.3A 8SOIC

ECAD Model:

Datasheet:: DMG4435SSS-13

Specifications

Diodes Incorporated DMG4435SSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG4435SSS-13.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
20mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
8.6 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 11A, 20V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1614pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7.3A Ta
Gate Charge (Qg) (Max) @ Vgs
35.4nC @ 10V
Rise Time
12.7ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
5V 20V
Vgs (Max)
±25V
Fall Time (Typ)
22.8 ns
Turn-Off Delay Time
44.9 ns
Continuous Drain Current (ID)
7.3A
Threshold Voltage
-1.7V
Gate to Source Voltage (Vgs)
25V
DS Breakdown Voltage-Min
30V
Height
1.5mm
Length
4.95mm
Width
3.95mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMG4435SSS-13 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1614pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.3A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 44.9 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -1.7V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (5V 20V), this device helps reduce its overall power consumption.

DMG4435SSS-13 Features
a continuous drain current (ID) of 7.3A
the turn-off delay time is 44.9 ns
a threshold voltage of -1.7V
a 30V drain to source voltage (Vdss)

DMG4435SSS-13 Applications
There are a lot of Diodes Incorporated
DMG4435SSS-13 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

DMG4435SSS-13 More Descriptions

P-Channel 30 V 20 mOhm Surface Mount Enhancement Mode Mosfet - SOP-8
P-Channel Enhancement MOSFET SOIC8 | Diodes Inc DMG4435SSS-13
Mosfet, P-Ch, -30V, Soic-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.3A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.013Ohm; Rds(On) Test Voltage Vgs:-20V; Threshold Voltage Vgs:-1.7V; Power Rohs Compliant: Yes |Diodes Inc. DMG4435SSS-13

Product Comparison

The three parts on the right have similar specifications to DMG4435SSS-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

DS Breakdown Voltage-Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Qualification Status

Configuration

FET Feature

View Compare
DMG4435SSS-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Digi-Reel®

2012

e3

yes

Active

1 (Unlimited)

8

EAR99

20mOhm

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

8.6 ns

P-Channel

SWITCHING

16m Ω @ 11A, 20V

2.5V @ 250μA

1614pF @ 15V

7.3A Ta

35.4nC @ 10V

12.7ns

30V

5V 20V

±25V

22.8 ns

44.9 ns

7.3A

-1.7V

25V

30V

1.5mm

4.95mm

3.95mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
DMG4N60SK3-13

Diodes Incorporated

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

yes

Obsolete

1 (Unlimited)

-

EAR99

-

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

48W Ta

-

-

-

-

N-Channel

-

2.3 Ω @ 2A, 10V

4.5V @ 250μA

532pF @ 25V

3.7A Tc

14.3nC @ 10V

-

600V

10V

±30V

-

-

3.7A

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

DMG4435SSS-13 vs DMG4N60SK3-13
DMG4N65CT

Diodes Incorporated

-

Through Hole

Through Hole

TO-220-3

3

2.299997g

SILICON

-55°C~150°C TJ

Tube

2012

e3

no

Obsolete

1 (Unlimited)

3

-

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

260

40

-

1

1

2.19W Ta

Single

ENHANCEMENT MODE

-

15.1 ns

N-Channel

SWITCHING

3 Ω @ 2A, 10V

5V @ 250μA

900pF @ 25V

4A Tc

13.5nC @ 10V

13.8ns

650V

10V

±30V

16 ns

40 ns

4A

-

30V

650V

16.5mm

10.7mm

4.85mm

No SVHC

No

ROHS3 Compliant

-

HIGH RELIABILITY

TO-220AB

4A

3Ohm

6A

456 mJ

-

-

-

DMG4435SSS-13 vs DMG4N65CT
DMG4812SSS-13

Diodes Incorporated

7 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

-

Matte Tin (Sn)

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

-

1.54W Ta

-

ENHANCEMENT MODE

-

6.62 ns

N-Channel

SWITCHING

15m Ω @ 10.7A, 10V

2.3V @ 250μA

1849pF @ 15V

8A Ta

18.5nC @ 10V

8.73ns

30V

4.5V 10V

±12V

4.69 ns

36.41 ns

8A

-

12V

30V

-

-

-

No SVHC

-

ROHS3 Compliant

-

HIGH RELIABILITY

-

8A

0.015Ohm

45A

-

Not Qualified

SINGLE WITH BUILT-IN DIODE

Schottky Diode (Body)

DMG4435SSS-13 vs DMG4812SSS-13