DMG4413LSS-13

Diodes Incorporated DMG4413LSS-13

Part Number:
DMG4413LSS-13
Manufacturer:
Diodes Incorporated
Ventron No:
2481718-DMG4413LSS-13
Description:
MOSFET P-CH 30V 10.5A SOP8L
ECAD Model:
Datasheet:
DMG4413LSS-13

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Specifications
Diodes Incorporated DMG4413LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG4413LSS-13.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    850.995985mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Digi-Reel®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Voltage
    30V
  • Power Dissipation-Max
    1.7W Ta
  • Element Configuration
    Single
  • Current
    83A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.2W
  • Turn On Delay Time
    15 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 13A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4965pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    10.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    46nC @ 5V
  • Rise Time
    9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    66 ns
  • Turn-Off Delay Time
    160 ns
  • Continuous Drain Current (ID)
    12A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0075Ohm
  • Drain to Source Breakdown Voltage
    -30V
  • Height
    1.5mm
  • Length
    4.95mm
  • Width
    3.95mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG4413LSS-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4965pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [160 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

DMG4413LSS-13 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 160 ns


DMG4413LSS-13 Applications
There are a lot of Diodes Incorporated
DMG4413LSS-13 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMG4413LSS-13 More Descriptions
MOSFET P-Channel 30V 12A SOIC8PEP | Diodes Inc DMG4413LSS-13
Trans MOSFET P-CH 30V 12A Automotive 8-Pin SOP EP T/R
DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8
Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistors
Product Comparison
The three parts on the right have similar specifications to DMG4413LSS-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Number of Channels
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    REACH SVHC
    Configuration
    Case Connection
    Qualification Status
    FET Feature
    View Compare
  • DMG4413LSS-13
    DMG4413LSS-13
    16 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    850.995985mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    30V
    1.7W Ta
    Single
    83A
    ENHANCEMENT MODE
    2.2W
    15 ns
    P-Channel
    SWITCHING
    7.5m Ω @ 13A, 10V
    2.1V @ 250μA
    4965pF @ 15V
    10.5A Ta
    46nC @ 5V
    9ns
    4.5V 10V
    ±20V
    66 ns
    160 ns
    12A
    20V
    0.0075Ohm
    -30V
    1.5mm
    4.95mm
    3.95mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG4N65CT
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2012
    e3
    no
    Obsolete
    1 (Unlimited)
    3
    -
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    260
    40
    -
    1
    -
    2.19W Ta
    Single
    -
    ENHANCEMENT MODE
    -
    15.1 ns
    N-Channel
    SWITCHING
    3 Ω @ 2A, 10V
    5V @ 250μA
    900pF @ 25V
    4A Tc
    13.5nC @ 10V
    13.8ns
    10V
    ±30V
    16 ns
    40 ns
    4A
    30V
    3Ohm
    -
    16.5mm
    10.7mm
    4.85mm
    No
    ROHS3 Compliant
    -
    1
    650V
    TO-220AB
    4A
    6A
    650V
    456 mJ
    No SVHC
    -
    -
    -
    -
  • DMG4800LK3-13
    15 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    3.949996g
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2012
    e3
    no
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    40
    4
    1
    -
    1.71W Ta
    -
    -
    ENHANCEMENT MODE
    1.71W
    5.03 ns
    N-Channel
    SWITCHING
    17m Ω @ 9A, 10V
    1.6V @ 250μA
    798pF @ 10V
    10A Ta
    8.7nC @ 5V
    4.5ns
    4.5V 10V
    ±25V
    8.55 ns
    26.33 ns
    10A
    25V
    -
    30V
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    2
    -
    -
    -
    48A
    -
    -
    No SVHC
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    -
    -
  • DMG4812SSS-13
    7 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    -
    1.54W Ta
    -
    -
    ENHANCEMENT MODE
    -
    6.62 ns
    N-Channel
    SWITCHING
    15m Ω @ 10.7A, 10V
    2.3V @ 250μA
    1849pF @ 15V
    8A Ta
    18.5nC @ 10V
    8.73ns
    4.5V 10V
    ±12V
    4.69 ns
    36.41 ns
    8A
    12V
    0.015Ohm
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    30V
    -
    8A
    45A
    30V
    -
    No SVHC
    SINGLE WITH BUILT-IN DIODE
    -
    Not Qualified
    Schottky Diode (Body)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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