Diodes Incorporated DMG4413LSS-13
- Part Number:
- DMG4413LSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481718-DMG4413LSS-13
- Description:
- MOSFET P-CH 30V 10.5A SOP8L
- Datasheet:
- DMG4413LSS-13
Diodes Incorporated DMG4413LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG4413LSS-13.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight850.995985mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Voltage30V
- Power Dissipation-Max1.7W Ta
- Element ConfigurationSingle
- Current83A
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.2W
- Turn On Delay Time15 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4965pF @ 15V
- Current - Continuous Drain (Id) @ 25°C10.5A Ta
- Gate Charge (Qg) (Max) @ Vgs46nC @ 5V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)66 ns
- Turn-Off Delay Time160 ns
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0075Ohm
- Drain to Source Breakdown Voltage-30V
- Height1.5mm
- Length4.95mm
- Width3.95mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG4413LSS-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4965pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [160 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMG4413LSS-13 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 160 ns
DMG4413LSS-13 Applications
There are a lot of Diodes Incorporated
DMG4413LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4965pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [160 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMG4413LSS-13 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 160 ns
DMG4413LSS-13 Applications
There are a lot of Diodes Incorporated
DMG4413LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMG4413LSS-13 More Descriptions
MOSFET P-Channel 30V 12A SOIC8PEP | Diodes Inc DMG4413LSS-13
Trans MOSFET P-CH 30V 12A Automotive 8-Pin SOP EP T/R
DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8
Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistors
Trans MOSFET P-CH 30V 12A Automotive 8-Pin SOP EP T/R
DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8
Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistors
The three parts on the right have similar specifications to DMG4413LSS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusLead FreeNumber of ChannelsDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)REACH SVHCConfigurationCase ConnectionQualification StatusFET FeatureView Compare
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DMG4413LSS-1316 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8850.995985mgSILICON-55°C~150°C TJDigi-Reel®2009e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260408130V1.7W TaSingle83AENHANCEMENT MODE2.2W15 nsP-ChannelSWITCHING7.5m Ω @ 13A, 10V2.1V @ 250μA4965pF @ 15V10.5A Ta46nC @ 5V9ns4.5V 10V±20V66 ns160 ns12A20V0.0075Ohm-30V1.5mm4.95mm3.95mmNoROHS3 CompliantLead Free-------------
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-Through HoleThrough HoleTO-220-332.299997gSILICON-55°C~150°C TJTube2012e3noObsolete1 (Unlimited)3-Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)--26040-1-2.19W TaSingle-ENHANCEMENT MODE-15.1 nsN-ChannelSWITCHING3 Ω @ 2A, 10V5V @ 250μA900pF @ 25V4A Tc13.5nC @ 10V13.8ns10V±30V16 ns40 ns4A30V3Ohm-16.5mm10.7mm4.85mmNoROHS3 Compliant-1650VTO-220AB4A6A650V456 mJNo SVHC----
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15 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-3.949996gSILICON-55°C~150°C TJDigi-Reel®2012e3noActive1 (Unlimited)2EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)SINGLEGULL WING2604041-1.71W Ta--ENHANCEMENT MODE1.71W5.03 nsN-ChannelSWITCHING17m Ω @ 9A, 10V1.6V @ 250μA798pF @ 10V10A Ta8.7nC @ 5V4.5ns4.5V 10V±25V8.55 ns26.33 ns10A25V-30V---NoROHS3 CompliantLead Free2---48A--No SVHCSINGLE WITH BUILT-IN DIODEDRAIN--
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7 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)2011e3yesObsolete1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING2604081-1.54W Ta--ENHANCEMENT MODE-6.62 nsN-ChannelSWITCHING15m Ω @ 10.7A, 10V2.3V @ 250μA1849pF @ 15V8A Ta18.5nC @ 10V8.73ns4.5V 10V±12V4.69 ns36.41 ns8A12V0.015Ohm-----ROHS3 Compliant--30V-8A45A30V-No SVHCSINGLE WITH BUILT-IN DIODE-Not QualifiedSchottky Diode (Body)
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