DMC3021LSD-13

Diodes Incorporated DMC3021LSD-13

Part Number:
DMC3021LSD-13
Manufacturer:
Diodes Incorporated
Ventron No:
3069637-DMC3021LSD-13
Description:
MOSFET N/P-CH 30V 8.5A/7A 8SO
ECAD Model:
Datasheet:
DMC3021LSD-13

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Specifications
Diodes Incorporated DMC3021LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC3021LSD-13.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    73.992255mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    2.5W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    DMC3021
  • Pin Count
    8
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • FET Type
    N and P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    21m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    767pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    8.5A 7A
  • Gate Charge (Qg) (Max) @ Vgs
    16.1nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Turn-Off Delay Time
    50.1 ns
  • Continuous Drain Current (ID)
    8.5A
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1.5mm
  • Length
    4.95mm
  • Width
    3.95mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMC3021LSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMC3021LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC3021LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMC3021LSD-13 More Descriptions
Dual Mosfet, Complement, 30V, 8.5A, Soic Rohs Compliant: Yes |Diodes Inc. DMC3021LSD-13
Trans MOSFET N/P-CH 30V 8.5A/7A Automotive 8-Pin SO T/R; DMC3021LSD-13 DMC3021LSD-7
DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to DMC3021LSD-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Reference Standard
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Drain to Source Breakdown Voltage
    Lead Free
    View Compare
  • DMC3021LSD-13
    DMC3021LSD-13
    16 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    2.5W
    DUAL
    GULL WING
    260
    40
    DMC3021
    8
    2
    ENHANCEMENT MODE
    2.5W
    N and P-Channel
    SWITCHING
    21m Ω @ 7A, 10V
    2.1V @ 250μA
    767pF @ 10V
    8.5A 7A
    16.1nC @ 10V
    30V
    N-CHANNEL AND P-CHANNEL
    50.1 ns
    8.5A
    20V
    30V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.5mm
    4.95mm
    3.95mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMC3028LSDXQ-13
    7 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    e3
    -
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    1.2W
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    2
    ENHANCEMENT MODE
    -
    N and P-Channel
    SWITCHING
    27m Ω @ 6A, 10V
    3V @ 250μA
    641pF @ 15V
    5.5A 5.8A
    13.2nC @ 5V
    30V
    N-CHANNEL AND P-CHANNEL
    -
    5.8A
    -
    30V
    METAL-OXIDE SEMICONDUCTOR
    Standard
    -
    -
    -
    -
    -
    ROHS3 Compliant
    AEC-Q101
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    5.5A
    0.027Ohm
    -
    -
    -
    -
    -
  • DMC3028LSD-13
    17 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    73.992255mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    -
    Other Transistors
    1.8W
    DUAL
    GULL WING
    260
    40
    DMC3028LSD
    8
    2
    ENHANCEMENT MODE
    2.1W
    N and P-Channel
    SWITCHING
    28m Ω @ 6A, 10V
    3V @ 250μA
    472pF @ 15V
    6.6A 6.8A
    10.5nC @ 10V
    -
    N-CHANNEL AND P-CHANNEL
    44 ns
    7.4A
    20V
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1.5mm
    5mm
    4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    5.5A
    -
    3.5 ns
    4.9ns
    28 ns
    30V
    Lead Free
  • DMC3018LSD-13
    -
    -
    -
    SO-8
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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