Diodes Incorporated DMC3021LSD-13
- Part Number:
- DMC3021LSD-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3069637-DMC3021LSD-13
- Description:
- MOSFET N/P-CH 30V 8.5A/7A 8SO
- Datasheet:
- DMC3021LSD-13
Diodes Incorporated DMC3021LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC3021LSD-13.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight73.992255mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation2.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberDMC3021
- Pin Count8
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs21m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds767pF @ 10V
- Current - Continuous Drain (Id) @ 25°C8.5A 7A
- Gate Charge (Qg) (Max) @ Vgs16.1nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Turn-Off Delay Time50.1 ns
- Continuous Drain Current (ID)8.5A
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.5mm
- Length4.95mm
- Width3.95mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMC3021LSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMC3021LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC3021LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMC3021LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC3021LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
DMC3021LSD-13 More Descriptions
Dual Mosfet, Complement, 30V, 8.5A, Soic Rohs Compliant: Yes |Diodes Inc. DMC3021LSD-13
Trans MOSFET N/P-CH 30V 8.5A/7A Automotive 8-Pin SO T/R; DMC3021LSD-13 DMC3021LSD-7
DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N/P-CH 30V 8.5A/7A Automotive 8-Pin SO T/R; DMC3021LSD-13 DMC3021LSD-7
DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to DMC3021LSD-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Polarity/Channel TypeTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinFET TechnologyFET FeatureHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusReference StandardConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxTurn On Delay TimeRise TimeFall Time (Typ)Drain to Source Breakdown VoltageLead FreeView Compare
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DMC3021LSD-1316 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYOther Transistors2.5WDUALGULL WING26040DMC302182ENHANCEMENT MODE2.5WN and P-ChannelSWITCHING21m Ω @ 7A, 10V2.1V @ 250μA767pF @ 10V8.5A 7A16.1nC @ 10V30VN-CHANNEL AND P-CHANNEL50.1 ns8.5A20V30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.5mm4.95mm3.95mmNo SVHCNoROHS3 Compliant----------
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7 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-SILICON-55°C~150°C TJTape & Reel (TR)2000e3-Active1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITY-1.2WDUALGULL WINGNOT SPECIFIEDNOT SPECIFIED--2ENHANCEMENT MODE-N and P-ChannelSWITCHING27m Ω @ 6A, 10V3V @ 250μA641pF @ 15V5.5A 5.8A13.2nC @ 5V30VN-CHANNEL AND P-CHANNEL-5.8A-30VMETAL-OXIDE SEMICONDUCTORStandard-----ROHS3 CompliantAEC-Q101SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE5.5A0.027Ohm-----
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17 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)873.992255mgSILICON-55°C~150°C TJDigi-Reel®2009e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)-Other Transistors1.8WDUALGULL WING26040DMC3028LSD82ENHANCEMENT MODE2.1WN and P-ChannelSWITCHING28m Ω @ 6A, 10V3V @ 250μA472pF @ 15V6.6A 6.8A10.5nC @ 10V-N-CHANNEL AND P-CHANNEL44 ns7.4A20V-METAL-OXIDE SEMICONDUCTORLogic Level Gate1.5mm5mm4mmNo SVHCNoROHS3 Compliant--5.5A-3.5 ns4.9ns28 ns30VLead Free
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---SO-8----Tape & Reel (TR)----------------------------------------RoHS Compliant---------
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