Diodes Incorporated DMC3021LK4-13

Name: DMC3021LK4-13
Brand: Diodes Incorporated
SKU: 3813526-DMC3021LK4-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMC3021LK4-13

Manufacturer:: Diodes Incorporated

Ventron No:: 3813526-DMC3021LK4-13

Description:: MOSFET N/P-CH 30V TO252-4L

ECAD Model:

Datasheet:: DMC3021LK4

Specifications

Diodes Incorporated DMC3021LK4-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC3021LK4-13.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPak (4 Leads Tab), TO-252AD
Number of Pins
5
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2.7W
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMC3021
Pin Count
4
JESD-30 Code
R-PSSO-G4
Number of Elements
2
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
2.5 ns
FET Type
N and P-Channel, Common Drain
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
21m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
751pF @ 10V
Current - Continuous Drain (Id) @ 25°C
9.4A 6.8A
Gate Charge (Qg) (Max) @ Vgs
17.4nC @ 10V
Rise Time
6.6ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
6.3 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
6.8A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6.7A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
40A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DMC3021LK4-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMC3021LK4-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC3021LK4-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMC3021LK4-13 More Descriptions

Mosfet, Dual, N/P-Ch, 30V, 14A Rohs Compliant: Yes |Diodes Inc. DMC3021LK4-13
Dual N/P-Channel 30 V 32/53 mOhm 9/10.1 nC 2.7 W Silicon SMT Mosfet TO-252-4
Trans MOSFET N/P-CH 30V 9.4A/6.8A 5-Pin(4 Tab) TO-252 T/R

Product Comparison

The three parts on the right have similar specifications to DMC3021LK4-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

FET Technology

FET Feature

REACH SVHC

Radiation Hardening

RoHS Status

Reference Standard

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Power Dissipation

Height

Length

Width

View Compare
DMC3021LK4-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-252-5, DPak (4 Leads Tab), TO-252AD

5

3.949996g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

4

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

2.7W

SINGLE

GULL WING

260

40

DMC3021

4

R-PSSO-G4

2

2

ENHANCEMENT MODE

2.5 ns

N and P-Channel, Common Drain

SWITCHING

21m Ω @ 7A, 10V

2.1V @ 250μA

751pF @ 10V

9.4A 6.8A

17.4nC @ 10V

6.6ns

N-CHANNEL AND P-CHANNEL

6.3 ns

19 ns

6.8A

20V

6.7A

30V

40A

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
DMC3028LSDXQ-13

Diodes Incorporated

7 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

e3

-

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

-

1.2W

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

-

-

2

-

ENHANCEMENT MODE

-

N and P-Channel

SWITCHING

27m Ω @ 6A, 10V

3V @ 250μA

641pF @ 15V

5.5A 5.8A

13.2nC @ 5V

-

N-CHANNEL AND P-CHANNEL

-

-

5.8A

-

5.5A

-

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

ROHS3 Compliant

AEC-Q101

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30V

0.027Ohm

30V

-

-

-

-

DMC3021LK4-13 vs DMC3028LSDXQ-13
DMC3018LSD-13

Diodes Incorporated

-

-

-

SO-8

-

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

DMC3021LK4-13 vs DMC3018LSD-13
DMC3021LSD-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

2.5W

DUAL

GULL WING

260

40

DMC3021

8

-

2

-

ENHANCEMENT MODE

-

N and P-Channel

SWITCHING

21m Ω @ 7A, 10V

2.1V @ 250μA

767pF @ 10V

8.5A 7A

16.1nC @ 10V

-

N-CHANNEL AND P-CHANNEL

-

50.1 ns

8.5A

20V

-

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

No SVHC

No

ROHS3 Compliant

-

-

30V

-

30V

2.5W

1.5mm

4.95mm

3.95mm

DMC3021LK4-13 vs DMC3021LSD-13