Diodes Incorporated DMC3028LSD-13

Name: DMC3028LSD-13
Brand: Diodes Incorporated
SKU: 3553984-DMC3028LSD-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMC3028LSD-13

Manufacturer:: Diodes Incorporated

Ventron No:: 3553984-DMC3028LSD-13

Description:: MOSFET N/P-CH 30V 6.6A/6.8A 8SO

ECAD Model:

Datasheet:: DMC3028LSD-13

Specifications

Diodes Incorporated DMC3028LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMC3028LSD-13.

Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.8W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMC3028LSD
Pin Count
8
Number of Elements
2
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Turn On Delay Time
3.5 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
472pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.6A 6.8A
Gate Charge (Qg) (Max) @ Vgs
10.5nC @ 10V
Rise Time
4.9ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
28 ns
Turn-Off Delay Time
44 ns
Continuous Drain Current (ID)
7.4A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5.5A
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.5mm
Length
5mm
Width
4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMC3028LSD-13 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMC3028LSD-13 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMC3028LSD-13. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMC3028LSD-13 More Descriptions

Dual N/P-Channel 30 V 0.045/0.041 Ohm 5.2/16.4 nC 2.1 W Silicon Mosfet - SOIC-8
MOSFET Dual N/P-Ch 30V 7.1A/7.4A SOIC8 | Diodes Inc DMC3028LSD-13
Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to DMC3028LSD-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Additional Feature

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Series

Number of Channels

Power - Max

View Compare
DMC3028LSD-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Digi-Reel®

2009

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

Other Transistors

1.8W

DUAL

GULL WING

260

40

DMC3028LSD

8

2

ENHANCEMENT MODE

2.1W

3.5 ns

N and P-Channel

SWITCHING

28m Ω @ 6A, 10V

3V @ 250μA

472pF @ 15V

6.6A 6.8A

10.5nC @ 10V

4.9ns

N-CHANNEL AND P-CHANNEL

28 ns

44 ns

7.4A

20V

5.5A

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

5mm

4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
DMC3021LSD-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

Other Transistors

2.5W

DUAL

GULL WING

260

40

DMC3021

8

2

ENHANCEMENT MODE

2.5W

-

N and P-Channel

SWITCHING

21m Ω @ 7A, 10V

2.1V @ 250μA

767pF @ 10V

8.5A 7A

16.1nC @ 10V

-

N-CHANNEL AND P-CHANNEL

-

50.1 ns

8.5A

20V

-

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.5mm

4.95mm

3.95mm

No SVHC

No

ROHS3 Compliant

-

HIGH RELIABILITY

30V

30V

-

-

-

DMC3028LSD-13 vs DMC3021LSD-13
DMC3026LSD-13

Diodes Incorporated

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

-

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

-

1.2W

DUAL

GULL WING

260

30

-

-

2

ENHANCEMENT MODE

-

9.7 ns

N and P-Channel Complementary

SWITCHING

25m Ω @ 6A, 10V, 28m Ω @ 6A, 10V

3V @ 250μA

641pF @ 15V 1241pF @ 15V

8.2A Ta 8A Ta

6nC @ 4.5V, 10.9nC @ 4.5V

17.1ns

N-CHANNEL AND P-CHANNEL

40.4 ns

60.5 ns

6.2A

20V

6.5A

-

METAL-OXIDE SEMICONDUCTOR

Standard

-

-

-

-

-

ROHS3 Compliant

-

HIGH RELIABILITY

30V

30V

Automotive, AEC-Q101

2

1.6W

DMC3028LSD-13 vs DMC3026LSD-13
DMC3021LSDQ-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

-

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

2.5W

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

10.1 ns

N and P-Channel

-

21m Ω @ 7A, 10V

2.1V @ 250μA

767pF @ 10V

8.5A 7A

16.1nC @ 10V

6.5ns

-

22.2 ns

50.1 ns

7A

20V

-

-30V

-

Logic Level Gate

-

-

-

-

-

ROHS3 Compliant

-

-

30V

-

-

2

-

DMC3028LSD-13 vs DMC3021LSDQ-13