ON Semiconductor D44H8G

Name: D44H8G
Brand: ON Semiconductor
SKU: 2463491-D44H8G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: D44H8G

Manufacturer:: ON Semiconductor

Ventron No:: 2463491-D44H8G

Description:: TRANS NPN 60V 10A TO220AB

ECAD Model:

Datasheet:: D44H8G

Specifications

ON Semiconductor D44H8G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor D44H8G.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
10A
Frequency
50MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
D44H
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Max Junction Temperature (Tj)
150°C
Height
19.85mm
Length
10.2616mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

D44H8G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 50MHz.A maximum collector current of 10A volts can be achieved.

D44H8G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz

D44H8G Applications
There are a lot of ON Semiconductor
D44H8G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

D44H8G More Descriptions

Trans GP BJT NPN 60V 10A 2000mW 3-Pin(3 Tab) TO-220AB Tube / TRANS NPN 60V 10A TO220AB
Power Bipolar Transistor, NPN, 10 A, 60 V
60V 2W 10A 40@4A1V 50MHz 1V@8A400mA NPN -55¡Í~ 150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor, Bipolar, Si, NPN, Power, VCEO 60VDC, IC 10A, PD 70W, TO-220,hFE 40,fT 50MHz | ON Semiconductor D44H8G
Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:10A; Power Dissipation:2W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz; DC Current Gain hFE Min:60hFE; MSL:-RoHS Compliant: Yes
. . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.

Product Comparison

The three parts on the right have similar specifications to D44H8G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Mount

Power - Max

Max Breakdown Voltage

View Compare
D44H8G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

Through Hole

TO-220-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

2004

e3

yes

Active

1 (Unlimited)

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

60V

2W

260

10A

50MHz

40

D44H

3

1

Single

2W

COLLECTOR

SWITCHING

50MHz

NPN

NPN

60V

10A

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

60V

50MHz

1V

60V

5V

40

150°C

19.85mm

10.2616mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
D44H11

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

1V @ 400mA, 8A

NPN

TO-220AB

-

50W

Tube

TO-220-3

150°C (TJ)

Through Hole

-

40 @ 4A, 1V

10µA

10A

-

-

-

D44H8G vs D44H11
D44H11TU

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 4 days ago)

5 Weeks

Tin

Through Hole

TO-220-3

-

3

1.8g

SILICON

150°C TJ

Tube

2009

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

-

Other Transistors

-

1.67W

-

-

50MHz

-

D44H

-

1

Single

1.67W

-

SWITCHING

50MHz

NPN

NPN

80V

10A

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

80V

50MHz

1V

80V

5V

60

-

16.51mm

10.67mm

4.83mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

60W

300V

D44H8G vs D44H11TU
D44H11G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

7 Weeks

Tin

Through Hole

TO-220-3

NO

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

80V

2W

260

10A

50MHz

40

D44H

3

1

Single

2W

COLLECTOR

SWITCHING

50MHz

NPN

NPN

80V

10A

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

80V

50MHz

1V

80V

5V

60

-

9.28mm

10.28mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D44H8G vs D44H11G