STMicroelectronics D44H11
- Part Number:
- D44H11
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2845225-D44H11
- Description:
- TRANS NPN 80V 10A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
STMicroelectronics D44H11 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics D44H11.
- Voltage - Collector Emitter Breakdown (Max):80V
- Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
- Transistor Type:NPN
- Supplier Device Package:TO-220AB
- Series:-
- Power - Max:50W
- Packaging:Tube
- Package / Case:TO-220-3
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:-
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
- Current - Collector Cutoff (Max):10µA
- Current - Collector (Ic) (Max):10A
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D44H11 More Descriptions
D44H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
80V 50W 40@4A,1V 10A NPN TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 20A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
80V 50W 40@4A,1V 10A NPN TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 20A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
The three parts on the right have similar specifications to D44H11.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Mounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperatureJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsWeightPackagingPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationCase ConnectionGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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D44H1180V1V @ 400mA, 8ANPNTO-220AB-50WTubeTO-220-3150°C (TJ)Through Hole-40 @ 4A, 1V10µA10A------------------------------------------------------------------
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60V1V @ 400mA, 8ANPNTO-220AB-2WTubeTO-220-3-55°C ~ 150°C (TJ)Through Hole50MHz40 @ 4A, 1V10µA10A-----------------------------------------------------------------
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--------------Through HoleTO-220-3NOSILICON150°C TJe0noObsolete1 (Unlimited)3TIN LEADSINGLE240unknown303R-PSFM-T3COMMERCIAL1SINGLE50WSWITCHINGNPNNPN40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A60V10A50MHzROHS3 Compliant---------------------------------
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--------------Through HoleTO-220-3NOSILICON-55°C~150°C TJe3yesActive1 (Unlimited)3--260-403--1--SWITCHINGNPNNPN40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A--50MHzROHS3 CompliantACTIVE (Last Updated: 1 day ago)8 WeeksTin34.535924gTube2004EAR99LEADFORM OPTIONS ARE AVAILABLEOther Transistors60V2W10A50MHzD44HSingle2WCOLLECTOR50MHz60V10A60V1V60V5V40150°C19.85mm10.2616mm4.826mmNo SVHCNoLead Free
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