Fairchild/ON Semiconductor D44H8

Name: D44H8
Brand: Fairchild/ON Semiconductor
SKU: 2464399-D44H8
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: D44H8

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2464399-D44H8

Description:: TRANS NPN 60V 8A TO-220

ECAD Model:

Datasheet:: D44H8, NZT44H8 TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor D44H8 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor D44H8.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
50W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Transition Frequency
50MHz
RoHS Status
ROHS3 Compliant

Description

D44H8 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.The part has a transition frequency of 50MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).

D44H8 Features
the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 50MHz

D44H8 Applications
There are a lot of Rochester Electronics, LLC
D44H8 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

D44H8 More Descriptions

D44H8 Series NPN/PNP 60 V 10 A Silicon Power Transistor Flange Mount - TO-220
Bipolar Junction Transistor (BJT) NPN 60V 10A 50W TO-220AB
60V 50W 10A 40@4A,1V 1V@8A,400mA NPN 150¡æ@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 60V 10A 50000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN D44H8 SGS THOMSON Ampere=10 V=60 TO220
Bipolar Transistors - BJT Gen Low Voltage PWR 60V Vceo 10A Ic
Power Bipolar, NPN, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT

Product Comparison

The three parts on the right have similar specifications to D44H8.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

RoHS Status

Mount

Number of Pins

Supplier Device Package

Packaging

Published

Base Part Number

Polarity

Max Collector Current

Collector Emitter Breakdown Voltage

Lifecycle Status

Factory Lead Time

Contact Plating

Weight

ECCN Code

Subcategory

Max Power Dissipation

Frequency

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

Additional Feature

Voltage - Rated DC

Current Rating

Case Connection

Max Junction Temperature (Tj)

Lead Free

View Compare
D44H8

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

150°C TJ

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

SINGLE

240

unknown

30

3

R-PSFM-T3

COMMERCIAL

1

SINGLE

50W

SWITCHING

NPN

NPN

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

60V

10A

50MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
D44H10TU

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NPN

-

-

-

-

80V

8A

-

RoHS Compliant

Through Hole

3

TO-220-3

Tube

2013

D44H

NPN

8A

80V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D44H8 vs D44H10TU
D44H11TU

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

SILICON

150°C TJ

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

-

-

-

-

1

-

60W

SWITCHING

NPN

NPN

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

-

-

50MHz

ROHS3 Compliant

Through Hole

3

-

Tube

2009

D44H

-

10A

80V

LAST SHIPMENTS (Last Updated: 4 days ago)

5 Weeks

Tin

1.8g

EAR99

Other Transistors

1.67W

50MHz

Single

1.67W

50MHz

80V

1V

300V

80V

5V

60

16.51mm

10.67mm

4.83mm

No SVHC

No

-

-

-

-

-

-

D44H8 vs D44H11TU
D44H8G

ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-55°C~150°C TJ

e3

yes

Active

1 (Unlimited)

3

-

-

260

-

40

3

-

-

1

-

-

SWITCHING

NPN

NPN

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

-

-

50MHz

ROHS3 Compliant

-

3

-

Tube

2004

D44H

-

10A

60V

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Tin

4.535924g

EAR99

Other Transistors

2W

50MHz

Single

2W

50MHz

60V

1V

-

60V

5V

40

19.85mm

10.2616mm

4.826mm

No SVHC

No

LEADFORM OPTIONS ARE AVAILABLE

60V

10A

COLLECTOR

150°C

Lead Free

D44H8 vs D44H8G