D44H11

ON Semiconductor D44H11

Part Number:
D44H11
Manufacturer:
ON Semiconductor
Ventron No:
3813510-D44H11
Description:
TRANS NPN 80V 10A TO220AB
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
ON Semiconductor D44H11 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor D44H11.
  • Voltage - Collector Emitter Breakdown (Max):
    80V
  • Vce Saturation (Max) @ Ib, Ic:
    1V @ 400mA, 8A
  • Transistor Type:
    NPN
  • Supplier Device Package:
    TO-220AB
  • Series:
    -
  • Power - Max:
    2W
  • Packaging:
    Tube
  • Package / Case:
    TO-220-3
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Through Hole
  • Frequency - Transition:
    50MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce:
    40 @ 4A, 1V
  • Current - Collector Cutoff (Max):
    10µA
  • Current - Collector (Ic) (Max):
    10A
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor D44H11.
D44H11 More Descriptions
D44H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
80V 50W 40@4A,1V 10A NPN TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 20A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
Product Comparison
The three parts on the right have similar specifications to D44H11.
  • Image
    Part Number
    Manufacturer
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    View Compare
  • D44H11
    D44H11
    80V
    1V @ 400mA, 8A
    NPN
    TO-220AB
    -
    2W
    Tube
    TO-220-3
    -55°C ~ 150°C (TJ)
    Through Hole
    50MHz
    40 @ 4A, 1V
    10µA
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • D44H11
    80V
    1V @ 400mA, 8A
    NPN
    TO-220AB
    -
    50W
    Tube
    TO-220-3
    150°C (TJ)
    Through Hole
    -
    40 @ 4A, 1V
    10µA
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • D44H8
    60V
    1V @ 400mA, 8A
    NPN
    TO-220AB
    -
    2W
    Tube
    TO-220-3
    -55°C ~ 150°C (TJ)
    Through Hole
    50MHz
    40 @ 4A, 1V
    10µA
    10A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • D44H8G
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Through Hole
    TO-220-3
    NO
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    LEADFORM OPTIONS ARE AVAILABLE
    Other Transistors
    60V
    2W
    260
    10A
    50MHz
    40
    D44H
    3
    1
    Single
    2W
    COLLECTOR
    SWITCHING
    50MHz
    NPN
    NPN
    60V
    10A
    40 @ 4A 1V
    10μA
    TO-220AB
    1V @ 400mA, 8A
    60V
    50MHz
    1V
    60V
    5V
    40
    150°C
    19.85mm
    10.2616mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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