ON Semiconductor D44H11
- Part Number:
- D44H11
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813510-D44H11
- Description:
- TRANS NPN 80V 10A TO220AB
- Datasheet:
- TO220B03 Pkg Drawing
ON Semiconductor D44H11 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor D44H11.
- Voltage - Collector Emitter Breakdown (Max):80V
- Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
- Transistor Type:NPN
- Supplier Device Package:TO-220AB
- Series:-
- Power - Max:2W
- Packaging:Tube
- Package / Case:TO-220-3
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
- Current - Collector Cutoff (Max):10µA
- Current - Collector (Ic) (Max):10A
Images are for reference only.See Product Specifications for product details.If you are interested to buy AMI Semiconductor / ON Semiconductor D44H11.
D44H11 More Descriptions
D44H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
80V 50W 40@4A,1V 10A NPN TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 20A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
80V 50W 40@4A,1V 10A NPN TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 20A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Bipolar Transistors - BJT NPN Gen Pur Switch
Power Bipolar, NPN, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole
The three parts on the right have similar specifications to D44H11.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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D44H1180V1V @ 400mA, 8ANPNTO-220AB-2WTubeTO-220-3-55°C ~ 150°C (TJ)Through Hole50MHz40 @ 4A, 1V10µA10A---------------------------------------------------------
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80V1V @ 400mA, 8ANPNTO-220AB-50WTubeTO-220-3150°C (TJ)Through Hole-40 @ 4A, 1V10µA10A---------------------------------------------------------
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60V1V @ 400mA, 8ANPNTO-220AB-2WTubeTO-220-3-55°C ~ 150°C (TJ)Through Hole50MHz40 @ 4A, 1V10µA10A--------------------------------------------------------
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--------------ACTIVE (Last Updated: 1 day ago)8 WeeksTinThrough HoleTO-220-3NO34.535924gSILICON-55°C~150°C TJTube2004e3yesActive1 (Unlimited)3EAR99LEADFORM OPTIONS ARE AVAILABLEOther Transistors60V2W26010A50MHz40D44H31Single2WCOLLECTORSWITCHING50MHzNPNNPN60V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A60V50MHz1V60V5V40150°C19.85mm10.2616mm4.826mmNo SVHCNoROHS3 CompliantLead Free
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