Texas Instruments CSD88539NDT
- Part Number:
- CSD88539NDT
- Manufacturer:
- Texas Instruments
- Ventron No:
- 3069699-CSD88539NDT
- Description:
- 60-V, N channel NexFET? power MOSFET, dual SO-8, 28 mOhm
- ECAD Model:
-
- Datasheet:
- csd88539nd
Texas Instruments CSD88539NDT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD88539NDT.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight540.001716mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED
- Max Power Dissipation2.1W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD88539
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time5 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3.6V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds741pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs9.4nC @ 10V
- Rise Time9ns
- Drain to Source Voltage (Vdss)60V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)15A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6.3A
- Drain-source On Resistance-Max0.034Ohm
- Pulsed Drain Current-Max (IDM)46A
- DS Breakdown Voltage-Min60V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.75mm
- Length4.9mm
- Width3.91mm
- Thickness1.58mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
The Texas Instruments CSD88539NDT is a dual MOSFET array designed for high-current, low-voltage applications. It features two N-channel MOSFETs with a maximum current rating of 15A and a maximum voltage rating of 60V. The on-resistance of the device is 0.023 ohms, and the gate-source threshold voltage is 10V. The gate-source voltage is 3V. The device is packaged in an 8-pin SOIC package.
The CSD88539NDT is designed for use in a variety of applications, including power management, motor control, and power conversion. It is suitable for use in high-current, low-voltage applications such as DC-DC converters, motor drivers, and power switches. The device is also suitable for use in automotive applications, as it is AEC-Q100 qualified.
The CSD88539NDT offers several features that make it an ideal choice for high-current, low-voltage applications. It has a low on-resistance of 0.023 ohms, which helps to reduce power losses. The device also has a low gate-source threshold voltage of 10V, which helps to reduce power consumption. Additionally, the device is AEC-Q100 qualified, making it suitable for use in automotive applications.
The CSD88539NDT is designed for use in a variety of applications, including power management, motor control, and power conversion. It is suitable for use in high-current, low-voltage applications such as DC-DC converters, motor drivers, and power switches. The device is also suitable for use in automotive applications, as it is AEC-Q100 qualified.
The CSD88539NDT offers several features that make it an ideal choice for high-current, low-voltage applications. It has a low on-resistance of 0.023 ohms, which helps to reduce power losses. The device also has a low gate-source threshold voltage of 10V, which helps to reduce power consumption. Additionally, the device is AEC-Q100 qualified, making it suitable for use in automotive applications.
CSD88539NDT More Descriptions
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
TEXAS INSTRUMENTS CSD88539NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
Transistor MOSFET Array Dual N-CH 60V 15A 8-Pin SOIC T/R
Power Field-Effect Transistor, 6.3A I(D), 60V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
TEXAS INSTRUMENTS CSD88539NDTDual MOSFET, Dual N Channel, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
Transistor MOSFET Array Dual N-CH 60V 15A 8-Pin SOIC T/R
Power Field-Effect Transistor, 6.3A I(D), 60V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The three parts on the right have similar specifications to CSD88539NDT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinFET TechnologyFET FeatureHeightLengthWidthThicknessREACH SVHCRoHS StatusLead FreeTerminal PositionFeedback Cap-Max (Crss)Drain to Source ResistanceSubcategoryNumber of OutputsMax Output CurrentConfigurationOutput Current per ChannelView Compare
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CSD88539NDTACTIVE (Last Updated: 4 days ago)6 WeeksGoldSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8540.001716mgSILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)8EAR99AVALANCHE RATED2.1WGULL WING260NOT SPECIFIEDCSD8853922DualENHANCEMENT MODE5 ns2 N-Channel (Dual)SWITCHING28m Ω @ 5A, 10V3.6V @ 250μA741pF @ 30V9.4nC @ 10V9ns60V4 ns14 ns15A3V20V6.3A0.034Ohm46A60VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.75mm4.9mm3.91mm1.58mmNo SVHCROHS3 CompliantLead Free--------- -
ACTIVE (Last Updated: 5 days ago)6 Weeks-Surface MountSurface Mount6-XFBGA6-SILICON-55°C~150°C TJTape & Reel (TR)NexFET™-yesActive1 (Unlimited)6EAR99-2.3WNO LEAD260NOT SPECIFIEDCSD833252-DualENHANCEMENT MODE205 ns2 N-Channel (Dual) Common DrainSWITCHING-1.25V @ 250μA-10.9nC @ 4.5V353ns12V589 ns711 ns8A-10V----METAL-OXIDE SEMICONDUCTORStandard-1.11mm2.16mm200μm-ROHS3 CompliantLead FreeBOTTOM144 pF------
-
ACTIVE (Last Updated: 5 days ago)6 Weeks-Surface MountSurface Mount6-XFBGA6-SILICON-55°C~150°C TJTape & Reel (TR)NexFET™-yesActive1 (Unlimited)6--2.3WNO LEAD260NOT SPECIFIEDCSD833252-DualENHANCEMENT MODE205 ns2 N-Channel (Dual) Common DrainSWITCHING-1.25V @ 250μA-10.9nC @ 4.5V353ns12V589 ns711 ns8A950mV10V----METAL-OXIDE SEMICONDUCTORStandard-1.11mm2.16mm200μmNo SVHCROHS3 CompliantLead FreeBOTTOM144 pF9.9mOhm-----
-
ACTIVE (Last Updated: 3 days ago)12 WeeksGoldSurface MountSurface Mount5-LGA5-SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99-8WNO LEAD260NOT SPECIFIEDCSD873842--ENHANCEMENT MODE-2 N-Channel (Half Bridge)SWITCHING7.7m Ω @ 25A, 8V1.9V @ 250μA1150pF @ 15V9.2nC @ 4.5V-30V--30A---0.0089Ohm-30VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-5mm3.5mm400μm-ROHS3 CompliantLead FreeBOTTOM--FET General Purpose Power195ACOMPLEX30A
-
30-V, N channel synchronous buck NexFET? power MOSFET, SON 3 mm x 3 mm power block, 25 A
-
12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
-
12-V, N channel NexFET? power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection
-
30-V, N channel synchronous buck NexFET? power MOSFET, 5 mm x 3.5 mm LGA, 30 A
-
30-V, N channel synchronous buck NexFET? power MOSFET, 3 mm x 2.5 mm LGA, 15 A
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