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CSD88539ND

Texas Instruments CSD88539ND

Part Number:
CSD88539ND
Manufacturer:
Texas Instruments
Ventron No:
2473588-CSD88539ND
Description:
60-V, N channel NexFET? power MOSFET, dual SO-8, 28 mOhm
ECAD Model:
Datasheet:
csd88539nd

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Part Pictures
  • CSD88539ND Detail Images
  • CSD88539ND Detail Images
  • CSD88539ND Detail Images
  • CSD88539ND Detail Images
  • CSD88539ND Detail Images
  • CSD88539ND Detail Images
  • CSD88539ND Detail Images
  • CSD88539ND Detail Images
Specifications
Texas Instruments CSD88539ND technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD88539ND.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    540.001716mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Max Power Dissipation
    2.1W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD88539
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.1W
  • Turn On Delay Time
    6 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    28m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3.6V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    741pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    9.4nC @ 10V
  • Rise Time
    9ns
  • Drain to Source Voltage (Vdss)
    60V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    5 ns
  • Continuous Drain Current (ID)
    15A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6.3A
  • Drain-source On Resistance-Max
    0.034Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    46A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • Height
    1.75mm
  • Length
    4.9mm
  • Width
    3.91mm
  • Thickness
    1.58mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD88539ND    Description     This dual small form factor (SO)-860V SO 23m Ω NexFETM power MOSFET is designed to operate as a half-bridge in low-current motor control applications.   CSD88539ND     Features
Ultra-low Q and Qgd avalanche rating lead-free Non-halogen in accordance with RoHS environmental protection standard
CSD88539ND    application Half-bridge synchronous step-down converter for motor control  



CSD88539ND More Descriptions
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
Transistor MOSFET Array Dual N-CH 60V 15A 8-Pin SOIC T/R
Mosfet, Dual N Channel, 60V, 15A, Soic; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD88539ND
Power Field-Effect Transistor, 6.3A I(D), 60V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
CSD88539ND Detail Images
Product Comparison
The three parts on the right have similar specifications to CSD88539ND.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Base Part Number
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    FET Technology
    FET Feature
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Position
    Time@Peak Reflow Temperature-Max (s)
    Feedback Cap-Max (Crss)
    Subcategory
    Number of Outputs
    Max Output Current
    Configuration
    Output Current per Channel
    DS Breakdown Voltage-Min
    Number of Functions
    Input Voltage-Nom
    Analog IC - Other Type
    Input Voltage (Max)
    Control Technique
    Switcher Configuration
    View Compare
  • CSD88539ND
    CSD88539ND
    Texas Instruments
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    540.001716mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    AVALANCHE RATED
    2.1W
    GULL WING
    260
    CSD88539
    2
    Dual
    ENHANCEMENT MODE
    2.1W
    6 ns
    2 N-Channel (Dual)
    SWITCHING
    28m Ω @ 5A, 10V
    3.6V @ 250μA
    741pF @ 30V
    9.4nC @ 10V
    9ns
    60V
    4 ns
    5 ns
    15A
    3V
    20V
    6.3A
    0.034Ohm
    60V
    46A
    METAL-OXIDE SEMICONDUCTOR
    Standard
    1.75mm
    4.9mm
    3.91mm
    1.58mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD83325L
    CSD83325L
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    6-XFBGA
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    -
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    2.3W
    NO LEAD
    260
    CSD83325
    2
    Dual
    ENHANCEMENT MODE
    -
    205 ns
    2 N-Channel (Dual) Common Drain
    SWITCHING
    -
    1.25V @ 250μA
    -
    10.9nC @ 4.5V
    353ns
    12V
    589 ns
    711 ns
    8A
    -
    10V
    -
    -
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Standard
    -
    1.11mm
    2.16mm
    200μm
    -
    -
    ROHS3 Compliant
    Lead Free
    BOTTOM
    NOT SPECIFIED
    144 pF
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    CSD88539ND vs CSD83325L
  • CSD87384M
    CSD87384M
    Texas Instruments
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    5-LGA
    5
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    8W
    NO LEAD
    260
    CSD87384
    2
    -
    ENHANCEMENT MODE
    -
    -
    2 N-Channel (Half Bridge)
    SWITCHING
    7.7m Ω @ 25A, 8V
    1.9V @ 250μA
    1150pF @ 15V
    9.2nC @ 4.5V
    -
    30V
    -
    -
    30A
    -
    -
    -
    0.0089Ohm
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    5mm
    3.5mm
    400μm
    -
    -
    ROHS3 Compliant
    Lead Free
    BOTTOM
    NOT SPECIFIED
    -
    FET General Purpose Power
    1
    95A
    COMPLEX
    30A
    30V
    -
    -
    -
    -
    -
    -
    CSD88539ND vs CSD87384M
  • CSD87381P
    CSD87381P
    Texas Instruments
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    5-LGA
    5
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    4W
    UNSPECIFIED
    260
    CSD87381
    -
    Single
    -
    4W
    -
    2 N-Channel (Half Bridge)
    -
    16.3m Ω @ 8A, 8V
    1.9V @ 250μA
    564pF @ 15V
    5nC @ 4.5V
    16.3ns
    30V
    2.9 ns
    16.8 ns
    15A
    -
    8V
    -
    -
    30V
    -
    -
    Logic Level Gate
    480μm
    3mm
    2.5mm
    400μm
    -
    -
    ROHS3 Compliant
    Lead Free
    UNSPECIFIED
    NOT SPECIFIED
    -
    -
    1
    40A
    -
    15A
    -
    1
    12V
    SWITCHING REGULATOR
    24V
    PULSE WIDTH MODULATION
    BUCK
    CSD88539ND vs CSD87381P
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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