Texas Instruments CSD87330Q3D
- Part Number:
- CSD87330Q3D
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2473292-CSD87330Q3D
- Description:
- 30-V, N channel synchronous buck NexFET? power MOSFET, SON 3 mm x 3 mm power block, 20 A
- Datasheet:
- csd87330q3d
Texas Instruments CSD87330Q3D technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD87330Q3D.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time12 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerLDFN
- Number of Pins8
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesNexFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation6W
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Terminal Pitch0.65mm
- Base Part NumberCSD87330
- Pin Count8
- Number of Outputs1
- Efficiency90 %
- Output TypeAdjustable
- Max Output Current15A
- Input Voltage-Nom12V
- Analog IC - Other TypeSWITCHING CONTROLLER
- Element ConfigurationDual
- Power Dissipation6W
- Max Output Voltage1.2V
- FET Type2 N-Channel (Half Bridge)
- Max Input Voltage27V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs5.8nC @ 4.5V
- Rise Time7.5ns
- Supply Current-Max (Isup)20mA
- Drain to Source Voltage (Vdss)30V
- Fall Time (Typ)1.6 ns
- Turn-Off Delay Time9.1 ns
- Switcher ConfigurationPUSH-PULL
- Continuous Drain Current (ID)20A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)1.15V
- Drain to Source Breakdown Voltage30V
- FET FeatureLogic Level Gate
- Height1.5mm
- Length3.3mm
- Width3.3mm
- Thickness1.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
CSD87330Q3D Description
The CSD87330Q3D NexFET powered power module is optimized for synchronous buck applications, providing high current, high efficiency and high frequency performance in the small form factor of the 3.3mmx3.3mM. Optimized for 5V gate driver applications, the product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver. CSD87330Q3D Features 1? Half-Bridge Power Block ? Up to 27-V VIN ? 90% System Efficiency at 15 A ? Up to 20-A Operation ? High-Frequency Operation (Up to 1.5 MHz) ? High-Density SON 3.3-mm × 3.3-mm Footprint ? Optimized for 5-V Gate Drive ? Low-Switching Losses ? Ultra-Low Inductance Package ? RoHS Compliant ? Halogen Free ? Lead-Free Terminal Plating CSD87330Q3D Applications
? Synchronous Buck Converters – High-Frequency Applications – High-Current, Low Duty Cycle Applications ? Multiphase Synchronous Buck Converters ? POL DC-DC Converters ? IMVP, VRM, and VRD Applications
The CSD87330Q3D NexFET powered power module is optimized for synchronous buck applications, providing high current, high efficiency and high frequency performance in the small form factor of the 3.3mmx3.3mM. Optimized for 5V gate driver applications, the product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver. CSD87330Q3D Features 1? Half-Bridge Power Block ? Up to 27-V VIN ? 90% System Efficiency at 15 A ? Up to 20-A Operation ? High-Frequency Operation (Up to 1.5 MHz) ? High-Density SON 3.3-mm × 3.3-mm Footprint ? Optimized for 5-V Gate Drive ? Low-Switching Losses ? Ultra-Low Inductance Package ? RoHS Compliant ? Halogen Free ? Lead-Free Terminal Plating CSD87330Q3D Applications
? Synchronous Buck Converters – High-Frequency Applications – High-Current, Low Duty Cycle Applications ? Multiphase Synchronous Buck Converters ? POL DC-DC Converters ? IMVP, VRM, and VRD Applications
CSD87330Q3D More Descriptions
30-V, N channel synchronous buck NexFET™ power MOSFET, SON 3 mm x 3 mm power block, 20 A
MOSFET DUAL N-CH 27V 20A SON-8 (w Therma
Switching Controller, 60A, 1500kHz Switching Freq-Max, PDSO8
MOSFET 30V Sync Buck NexFET Power Block
Mosfet, Dual N-Ch, 30V, 20A, Lson-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(On):-; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:1V; Power Dissipation Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD87330Q3D
MOSFET DUAL N-CH 27V 20A SON-8 (w Therma
Switching Controller, 60A, 1500kHz Switching Freq-Max, PDSO8
MOSFET 30V Sync Buck NexFET Power Block
Mosfet, Dual N-Ch, 30V, 20A, Lson-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(On):-; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:1V; Power Dissipation Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD87330Q3D
The three parts on the right have similar specifications to CSD87330Q3D.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchBase Part NumberPin CountNumber of OutputsEfficiencyOutput TypeMax Output CurrentInput Voltage-NomAnalog IC - Other TypeElement ConfigurationPower DissipationMax Output VoltageFET TypeMax Input VoltageVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeSupply Current-Max (Isup)Drain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeSwitcher ConfigurationContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureHeightLengthWidthThicknessREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialTerminal PositionTerminal FormTime@Peak Reflow Temperature-Max (s)Number of ElementsOperating ModeTurn On Delay TimeTransistor ApplicationFET TechnologyDrain to Source ResistanceFeedback Cap-Max (Crss)SubcategoryConfigurationRds On (Max) @ Id, VgsOutput Current per ChannelDrain-source On Resistance-MaxDS Breakdown Voltage-MinInput Voltage (Max)Control TechniqueView Compare
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CSD87330Q3DACTIVE (Last Updated: 1 day ago)12 WeeksGoldSurface MountSurface Mount8-PowerLDFN8-55°C~150°C TJCut Tape (CT)NexFET™e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)6W26010.65mmCSD873308190 %Adjustable15A12VSWITCHING CONTROLLERDual6W1.2V2 N-Channel (Half Bridge)27V2.1V @ 250μA900pF @ 15V5.8nC @ 4.5V7.5ns20mA30V1.6 ns9.1 nsPUSH-PULL20A1V1.15V30VLogic Level Gate1.5mm3.3mm3.3mm1.5mmNo SVHCNoROHS3 CompliantContains Lead--------------------
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ACTIVE (Last Updated: 5 days ago)6 Weeks-Surface MountSurface Mount6-XFBGA6-55°C~150°C TJTape & Reel (TR)NexFET™-yesActive1 (Unlimited)6--2.3W260--CSD83325-------Dual--2 N-Channel (Dual) Common Drain-1.25V @ 250μA-10.9nC @ 4.5V353ns-12V589 ns711 ns-8A950mV10V-Standard-1.11mm2.16mm200μmNo SVHC-ROHS3 CompliantLead FreeSILICONBOTTOMNO LEADNOT SPECIFIED2ENHANCEMENT MODE205 nsSWITCHINGMETAL-OXIDE SEMICONDUCTOR9.9mOhm144 pF--------
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ACTIVE (Last Updated: 3 days ago)12 WeeksGoldSurface MountSurface Mount5-LGA5-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99-8W260--CSD87384-1--95A-----2 N-Channel (Half Bridge)-1.9V @ 250μA1150pF @ 15V9.2nC @ 4.5V--30V---30A---Logic Level Gate-5mm3.5mm400μm--ROHS3 CompliantLead FreeSILICONBOTTOMNO LEADNOT SPECIFIED2ENHANCEMENT MODE-SWITCHINGMETAL-OXIDE SEMICONDUCTOR--FET General Purpose PowerCOMPLEX7.7m Ω @ 25A, 8V30A0.0089Ohm30V--
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ACTIVE (Last Updated: 3 days ago)6 WeeksGoldSurface MountSurface Mount5-LGA5-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99-4W2601-CSD87381-1--40A12VSWITCHING REGULATORSingle4W-2 N-Channel (Half Bridge)-1.9V @ 250μA564pF @ 15V5nC @ 4.5V16.3ns-30V2.9 ns16.8 nsBUCK15A-8V30VLogic Level Gate480μm3mm2.5mm400μm--ROHS3 CompliantLead Free-UNSPECIFIEDUNSPECIFIEDNOT SPECIFIED---------16.3m Ω @ 8A, 8V15A--24VPULSE WIDTH MODULATION
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