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CSD85301Q2

Texas Instruments CSD85301Q2

Part Number:
CSD85301Q2
Manufacturer:
Texas Instruments
Ventron No:
2473891-CSD85301Q2
Description:
MOSFET 2N-CH 20V 5A 6WSON
ECAD Model:
Datasheet:
csd85301q2

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Specifications
Texas Instruments CSD85301Q2 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD85301Q2.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-WDFN Exposed Pad
  • Number of Pins
    6
  • Weight
    9.695537mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Max Power Dissipation
    2.3W
  • Terminal Form
    NO LEAD
  • Base Part Number
    CSD85301
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    469pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    5.4nC @ 4.5V
  • Rise Time
    26ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    10V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain-source On Resistance-Max
    0.039Ohm
  • Avalanche Energy Rating (Eas)
    3.8 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate, 5V Drive
  • Height
    800μm
  • Length
    2mm
  • Width
    2mm
  • Thickness
    750μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD85301Q2       Description     The CSD8530102 is a 20V23mQ N-Channe device in SON2X2 mm plastic package and dual independent MOSFET. The two FET are designed as half-bridge structures for synchronous buck and other power applications. In addition, the device can be used in adapters, USB input protection and battery charging applications. The dual field effect transistor has a low drain-to-source turn-on resistance that minimizes loss and loss. There are fewer parts with limited space.   CSD85301Q2              Features
Low On-Resistance Dual Independent MOSFETs Space Saving SON2x2 mm Plastic Package
Optimized for 5 V Gate Driver Avalanche Rated Pb and Halogen Free RoHS Compliant   CSD85301Q2            Applications Point-of-Load Synchronous Buck Converter for Applications in NetworkingTelecom.and Computing Systems Adaptor or USB Input Protection for Notebook PCs and Tablets Battery Protection  


CSD85301Q2 More Descriptions
20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection 6-WSON
Transistor MOSFET Array Dual N-CH 20V 5A 6-Pin WSON T/R
MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
Power Field-Effect Transistor, 5A I(D), 20V, 0.039ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power MOSFET 6-Pin WSON EP T/R
20V Dual N-Channel NexFET Power MOSFETs
Product Comparison
The three parts on the right have similar specifications to CSD85301Q2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Max Power Dissipation
    Terminal Form
    Base Part Number
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    FET Technology
    FET Feature
    Height
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Threshold Voltage
    Drain to Source Resistance
    Feedback Cap-Max (Crss)
    REACH SVHC
    Subcategory
    Number of Outputs
    Max Output Current
    Configuration
    Output Current per Channel
    DS Breakdown Voltage-Min
    Number of Functions
    Input Voltage-Nom
    Analog IC - Other Type
    Power Dissipation
    Input Voltage (Max)
    Control Technique
    Switcher Configuration
    Drain to Source Breakdown Voltage
    View Compare
  • CSD85301Q2
    CSD85301Q2
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    9.695537mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    AVALANCHE RATED
    2.3W
    NO LEAD
    CSD85301
    2
    2
    Dual
    ENHANCEMENT MODE
    DRAIN
    6 ns
    2 N-Channel (Dual)
    SWITCHING
    27m Ω @ 5A, 4.5V
    1.2V @ 250μA
    469pF @ 10V
    5.4nC @ 4.5V
    26ns
    20V
    15 ns
    14 ns
    5A
    10V
    5A
    0.039Ohm
    3.8 mJ
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate, 5V Drive
    800μm
    2mm
    2mm
    750μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD83325LT
    CSD83325LT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    6-XFBGA
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    -
    yes
    Active
    1 (Unlimited)
    6
    -
    -
    2.3W
    NO LEAD
    CSD83325
    2
    -
    Dual
    ENHANCEMENT MODE
    -
    205 ns
    2 N-Channel (Dual) Common Drain
    SWITCHING
    -
    1.25V @ 250μA
    -
    10.9nC @ 4.5V
    353ns
    12V
    589 ns
    711 ns
    8A
    10V
    -
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Standard
    -
    1.11mm
    2.16mm
    200μm
    ROHS3 Compliant
    Lead Free
    BOTTOM
    260
    NOT SPECIFIED
    950mV
    9.9mOhm
    144 pF
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    CSD85301Q2 vs CSD83325LT
  • CSD87384M
    CSD87384M
    Texas Instruments
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    5-LGA
    5
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    8W
    NO LEAD
    CSD87384
    2
    -
    -
    ENHANCEMENT MODE
    -
    -
    2 N-Channel (Half Bridge)
    SWITCHING
    7.7m Ω @ 25A, 8V
    1.9V @ 250μA
    1150pF @ 15V
    9.2nC @ 4.5V
    -
    30V
    -
    -
    30A
    -
    -
    0.0089Ohm
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    5mm
    3.5mm
    400μm
    ROHS3 Compliant
    Lead Free
    BOTTOM
    260
    NOT SPECIFIED
    -
    -
    -
    -
    FET General Purpose Power
    1
    95A
    COMPLEX
    30A
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    CSD85301Q2 vs CSD87384M
  • CSD87381P
    CSD87381P
    Texas Instruments
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    5-LGA
    5
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    4W
    UNSPECIFIED
    CSD87381
    -
    -
    Single
    -
    -
    -
    2 N-Channel (Half Bridge)
    -
    16.3m Ω @ 8A, 8V
    1.9V @ 250μA
    564pF @ 15V
    5nC @ 4.5V
    16.3ns
    30V
    2.9 ns
    16.8 ns
    15A
    8V
    -
    -
    -
    -
    Logic Level Gate
    480μm
    3mm
    2.5mm
    400μm
    ROHS3 Compliant
    Lead Free
    UNSPECIFIED
    260
    NOT SPECIFIED
    -
    -
    -
    -
    -
    1
    40A
    -
    15A
    -
    1
    12V
    SWITCHING REGULATOR
    4W
    24V
    PULSE WIDTH MODULATION
    BUCK
    30V
    CSD85301Q2 vs CSD87381P
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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