ON Semiconductor CPH3462-TL-W
- Part Number:
- CPH3462-TL-W
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2480933-CPH3462-TL-W
- Description:
- MOSFET N-CH 100V 1A CPH3
- Datasheet:
- CPH3462-TL-W
ON Semiconductor CPH3462-TL-W technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor CPH3462-TL-W.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time7 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee6
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max1W Ta
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time4 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs785m Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.6V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds155pF @ 20V
- Current - Continuous Drain (Id) @ 25°C1A Ta
- Gate Charge (Qg) (Max) @ Vgs3.4nC @ 10V
- Rise Time2.8ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)1A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)1A
- Drain-source On Resistance-Max0.785Ohm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CPH3462-TL-W Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 155pF @ 20V.This device has a continuous drain current (ID) of [1A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 1A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 17 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 10V).
CPH3462-TL-W Features
a continuous drain current (ID) of 1A
the turn-off delay time is 17 ns
a 100V drain to source voltage (Vdss)
CPH3462-TL-W Applications
There are a lot of ON Semiconductor
CPH3462-TL-W applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 155pF @ 20V.This device has a continuous drain current (ID) of [1A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 1A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 17 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 10V).
CPH3462-TL-W Features
a continuous drain current (ID) of 1A
the turn-off delay time is 17 ns
a 100V drain to source voltage (Vdss)
CPH3462-TL-W Applications
There are a lot of ON Semiconductor
CPH3462-TL-W applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
CPH3462-TL-W More Descriptions
N-Channel Power MOSFET, 100V, 1A, 785mΩ
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N-CH, 100V, 1A, CPH-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.6V; Power Dissipation Pd: 1W; Transistor Case Style: CPH; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, N-CH, 100V, 1A, CPH-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.6V; Power Dissipation Pd: 1W; Transistor Case Style: CPH; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
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