Infineon Technologies BUZ31

Name: BUZ31
Brand: Infineon Technologies
SKU: 2853838-BUZ31
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUZ31

Manufacturer:: Infineon Technologies

Ventron No:: 2853838-BUZ31

Description:: MOSFET N-CH 200V 14.5A TO220AB

ECAD Model:

Datasheet:: BUZ31

Specifications

Infineon Technologies BUZ31 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BUZ31.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SIPMOS®
Published
2004
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
200mOhm
Terminal Finish
MATTE TIN
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
14.5A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
95W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
95W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
200m Ω @ 9A, 5V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14.5A Tc
Rise Time
50ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±20V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
150 ns
Reverse Recovery Time
170 ns
Continuous Drain Current (ID)
14.5A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
58A
Dual Supply Voltage
200V
Avalanche Energy Rating (Eas)
200 mJ
Nominal Vgs
3 V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BUZ31 Description
BUZ31 is a 200v N-channel SIPMOS? Power Transistor. A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET BUZ31 is in the TO-220-3 package with 95W power dissipation.

BUZ31 Features
N channel
Enhancement mode
Avalanche-rated
Drain- source breakdown voltage: 200V
Package: TO-220-3

BUZ31 Applications
Consumer electronics
Radio-frequency (RF) applications
Transportation technology
Automotive industry

BUZ31 More Descriptions

MOSFET N-CH 200V 14.5A TO220AB
Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 9
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:14.5A; Resistance, Rds On:0.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220AB; Termination;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:95W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Avalanche Single Pulse Energy Eas:200mJ; Capacitance Ciss Typ:840pF; Current Id Max:14.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:200mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2 Tab)D, 3S; Power Dissipation Pd:95W; Power Dissipation Pd:75W; Power Dissipation Ptot Max:95W; Pulse Current Idm:58A; Reverse Recovery Time trr Typ:170ns; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2.1V

Certification