BUL381D

STMicroelectronics BUL381D

Part Number:
BUL381D
Manufacturer:
STMicroelectronics
Ventron No:
2464456-BUL381D
Description:
TRANS NPN 400V 5A TO-220
ECAD Model:
Datasheet:
BUL381D

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Specifications
STMicroelectronics BUL381D technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL381D.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    400V
  • Max Power Dissipation
    70W
  • Current Rating
    5A
  • Base Part Number
    BUL381
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    70W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    400V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    8 @ 2A 5V
  • Current - Collector Cutoff (Max)
    250μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    1.1V @ 750mA, 3A
  • Collector Emitter Breakdown Voltage
    400V
  • Collector Emitter Saturation Voltage
    1.1V
  • Collector Base Voltage (VCBO)
    800V
  • Emitter Base Voltage (VEBO)
    9V
  • hFE Min
    10
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BUL381D Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.When VCE saturation is 1.1V @ 750mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.A maximum collector current of 5A volts can be achieved.

BUL381D Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 750mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A


BUL381D Applications
There are a lot of STMicroelectronics
BUL381D applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BUL381D More Descriptions
Bipolar (BJT) Transistor NPN 400V 5A 70W Through Hole TO-220AB
Trans GP BJT NPN 400V 5A 70000mW 3-Pin(3 Tab) TO-220AB Tube
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor NPN 400V 5A Fast-Sw. TO-220
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
Power Bipolar, NPN, 5V, 750mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 70W; DC Collector Cur; Available until stocks are exhausted Alternative available
Product Comparison
The three parts on the right have similar specifications to BUL381D.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Power - Max
    Pbfree Code
    View Compare
  • BUL381D
    BUL381D
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    Other Transistors
    400V
    70W
    5A
    BUL381
    3
    1
    Single
    70W
    SWITCHING
    NPN
    NPN
    400V
    5A
    8 @ 2A 5V
    250μA
    TO-220AB
    1.1V @ 750mA, 3A
    400V
    1.1V
    800V
    9V
    10
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUL3P5
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    150°C TJ
    Tube
    e3
    Obsolete
    3 (168 Hours)
    3
    EAR99
    -
    Other Transistors
    -
    60W
    -
    BUL3P5
    3
    1
    Single
    -
    SWITCHING
    PNP
    PNP
    500mV
    3A
    18 @ 700mA 5V
    100μA
    TO-220AB
    500mV @ 200mA, 1A
    400V
    -
    500V
    5V
    10
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    60W
    -
  • BUL3N7
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Obsolete
    3 (168 Hours)
    3
    EAR99
    -
    Other Transistors
    -
    60W
    -
    BUL3N7
    3
    1
    Single
    -
    SWITCHING
    NPN
    NPN
    400V
    3A
    18 @ 700mA 5V
    100μA
    TO-220AB
    500mV @ 200mA, 1A
    400V
    -
    700V
    10V
    10
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    -
    -
    -
    60W
    yes
  • BUL39D
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    450V
    70W
    4A
    BUL39
    3
    1
    Single
    70W
    SWITCHING
    NPN
    NPN
    450V
    4A
    10 @ 10mA 5V
    100μA
    TO-220AB
    1.1V @ 500mA, 2.5A
    450V
    1.1V
    850V
    9V
    4
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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