STMicroelectronics BUL310FP

Name: BUL310FP
Brand: STMicroelectronics
SKU: 2469348-BUL310FP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUL310FP

Manufacturer:: STMicroelectronics

Ventron No:: 2469348-BUL310FP

Description:: TRANS NPN 500V 5A TO-220FP

ECAD Model:

Datasheet:: BUL310FP

Specifications

STMicroelectronics BUL310FP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL310FP.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Max Power Dissipation
36W
Terminal Position
SINGLE
Base Part Number
BUL310
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
36W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 3A 2.5V
Current - Collector Cutoff (Max)
250μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.1V @ 600mA, 3A
Collector Emitter Breakdown Voltage
500V
Collector Emitter Saturation Voltage
1.1V
Collector Base Voltage (VCBO)
1kV
Emitter Base Voltage (VEBO)
9V
hFE Min
6
Height
9.3mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BUL310FP Overview
In this device, the DC current gain is 6 @ 3A 2.5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 600mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

BUL310FP Features
the DC current gain for this device is 6 @ 3A 2.5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 600mA, 3A
the emitter base voltage is kept at 9V

BUL310FP Applications
There are a lot of STMicroelectronics
BUL310FP applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BUL310FP More Descriptions

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 500V 5A 3-Pin(3 Tab) TO-220FP Tube
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220FP; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:500V; Current Ic Continuous a Max:5A; Voltage, Vce Sat Max:0.5V; Power Dissipation:36W; Min Hfe:6; Case ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220FP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 500V; Transition Frequency ft: -; Power Dissipation Pd: 36W; DC Collector Current: 5A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 10A; Current Ic Continuous a Max: 5A; Current Ic hFE: 3A; Hfe Min: 6; Power Dissipation Ptot Max: 36W; SMD Marking: BUL310FP; Voltage Vcbo: 1kV

Product Comparison

The three parts on the right have similar specifications to BUL310FP.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Max Power Dissipation

Terminal Position

Base Part Number

Pin Count

Number of Elements

Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Element Configuration

Power - Max

Lead Free

Lifecycle Status

Factory Lead Time

Contact Plating

Voltage - Rated DC

Current Rating

View Compare
BUL310FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn) - annealed

Other Transistors

36W

SINGLE

BUL310

3

1

SINGLE

36W

ISOLATED

SWITCHING

NPN

NPN

500V

5A

6 @ 3A 2.5V

250μA

TO-220AB

1.1V @ 600mA, 3A

500V

1.1V

1kV

9V

6

9.3mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUL3P5

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

e3

-

Obsolete

3 (168 Hours)

3

EAR99

Matte Tin (Sn)

Other Transistors

60W

-

BUL3P5

3

1

-

-

-

SWITCHING

PNP

PNP

500mV

3A

18 @ 700mA 5V

100μA

TO-220AB

500mV @ 200mA, 1A

400V

-

500V

5V

10

-

-

-

-

-

ROHS3 Compliant

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

Single

60W

-

-

-

-

-

-

BUL310FP vs BUL3P5
BUL3N7

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

e3

yes

Obsolete

3 (168 Hours)

3

EAR99

Tin (Sn)

Other Transistors

60W

-

BUL3N7

3

1

-

-

-

SWITCHING

NPN

NPN

400V

3A

18 @ 700mA 5V

100μA

TO-220AB

500mV @ 200mA, 1A

400V

-

700V

10V

10

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

Single

60W

Lead Free

-

-

-

-

-

BUL310FP vs BUL3N7
BUL39D

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

e3

-

Active

1 (Unlimited)

3

EAR99

-

Other Transistors

70W

-

BUL39

3

1

-

70W

-

SWITCHING

NPN

NPN

450V

4A

10 @ 10mA 5V

100μA

TO-220AB

1.1V @ 500mA, 2.5A

450V

1.1V

850V

9V

4

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

Single

-

Lead Free

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Tin

450V

4A

BUL310FP vs BUL39D